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CI40N65SM

Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

CI40N65SM from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; recommended operating gate-source voltage -5/+18 V (absolute maximum -8/+22 V).
2 D passive Drain; drain-source voltage up to 650 V, continuous drain current 40 A at TC=25˚C (29 A at 100˚C).
3 S passive Source; power source terminal of the SiC MOSFET, body diode continuous forward current 30 A at TC=25˚C.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSmax 650 V VGS=0V, ID=100μA 1
Gate-Source Voltage (absolute maximum) VGSmax -8 22 V Absolute maximum values 1
Gate-Source Voltage (recommended operational) VGSop -5 18 V Recommended operational values 1
Continuous Drain Current ID 40 A VGS=20V, TC=25˚C 1
Continuous Drain Current ID 29 A VGS=20V, TC=100˚C 1
Pulse Drain Current IDM 90 A Pulse width limited by Tjmax 1
Power Dissipation PD 150 W TC=25˚C, TJ=175˚C 1
Operating Junction and Storage Temperature TJ, Tstg -55 175 ˚C 1
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS=0V, ID=100μA 2
Gate Threshold Voltage VGS(th) 2 3.2 4 V VGS=VDS, IDS=5mA, TC=25˚C 2
Gate Threshold Voltage VGS(th) 2.3 V VGS=VDS, IDS=5mA, TC=175˚C 2
Zero Gate Voltage Drain Current IDSS 1 100 μA VDS=650V, VGS=0V 2
Gate-Source Leakage Current IGSS 50 200 nA VGS=18V, VDS=0V 2
Drain-Source On-State Resistance RDS(on) 45 65 mΩ VGS=18V, ID=20A, TC=25˚C 2
Drain-Source On-State Resistance RDS(on) 75 mΩ VGS=18V, ID=20A, TC=175˚C 2
Continuous Diode Forward Current IS 30 A TC=25˚C 2
Thermal Resistance Junction to Case RθJC 0.95 ℃/W 2
Thermal Resistance Junction to Ambient RθJA 35 ℃/W 2
Transconductance gfs 12 S VDS=20V, ID=20A, TJ=25˚C 2
Transconductance gfs 11 S VDS=20V, ID=20A, TJ=175˚C 2
Input Capacitance Ciss 1100 pF VGS=0V, VDS=400V, f=1MHz, VAC=25mV 2
Output Capacitance Coss 56 pF VGS=0V, VDS=400V, f=1MHz, VAC=25mV 2
Reverse Transfer Capacitance Crss 15 pF VGS=0V, VDS=400V, f=1MHz, VAC=25mV 2
Turn-On Switching Energy EON 110 μJ VDS=400V, VGS=-5/18V, ID=20A, RG(ext)=0Ω 2
Turn-Off Switching Energy EOFF 32 μJ VDS=400V, VGS=-5/18V, ID=20A, RG(ext)=0Ω 2
Turn-On Delay Time td(on) 15 ns VDD=400V, VGS=-0/20V, ID=20A 2
Rise Time tr 45 ns VDD=400V, VGS=-0/20V, ID=20A 2
Turn-Off Delay Time td(off) 13 ns VDD=400V, VGS=-0/20V, ID=20A 2
Fall Time tf 10 ns VDD=400V, VGS=-0/20V, ID=20A 2
Internal Gate Resistance RG(int) 6 Ω f=1 MHz, VAC=25mV 2
Gate to Source Charge Qgs 21 nC VDD=400V, VGS=-0/20V, ID=20A 2
Gate to Drain Charge Qgd 14 nC VDD=400V, VGS=-0/20V, ID=20A 2
Total Gate Charge Qg 75 nC VDD=400V, VGS=-0/20V, ID=20A 2
Diode Forward Voltage VSD 3.4 V VGS=-5V, ISD=10A, TJ=25 °C 2
Diode Forward Voltage VSD 3.2 V VGS=-5V, ISD=10A, TJ=175 °C 2
Reverse Recovery Time trr 20 ns VGS=-5V, ISD=20A, VR=400V, dif/dt=1200A/μs 2
Reverse Recovery Charge Qrr 65 nC VGS=-5V, ISD=20A, VR=400V, dif/dt=1200A/μs 2
Peak Reverse Recovery Current Irrm 8 A VGS=-5V, ISD=20A, VR=400V, dif/dt=1200A/μs 2

CAD (KiCad official)

  • Symbol: CI40N65SM
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ci40n65sm-etched.step / ci40n65sm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ci40n65sm.step / ci40n65sm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 52d1b4988a2592bf, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF