component
CI40N65SM
Public Made by Adomby adom
Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCI40N65SM
Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
CI40N65SM from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; recommended operating gate-source voltage -5/+18 V (absolute maximum -8/+22 V). |
| 2 | D | passive | Drain; drain-source voltage up to 650 V, continuous drain current 40 A at TC=25˚C (29 A at 100˚C). |
| 3 | S | passive | Source; power source terminal of the SiC MOSFET, body diode continuous forward current 30 A at TC=25˚C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSmax | 650 | V | VGS=0V, ID=100μA | 1 | ||
| Gate-Source Voltage (absolute maximum) | VGSmax | -8 | 22 | V | Absolute maximum values | 1 | |
| Gate-Source Voltage (recommended operational) | VGSop | -5 | 18 | V | Recommended operational values | 1 | |
| Continuous Drain Current | ID | 40 | A | VGS=20V, TC=25˚C | 1 | ||
| Continuous Drain Current | ID | 29 | A | VGS=20V, TC=100˚C | 1 | ||
| Pulse Drain Current | IDM | 90 | A | Pulse width limited by Tjmax | 1 | ||
| Power Dissipation | PD | 150 | W | TC=25˚C, TJ=175˚C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 175 | ˚C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS=0V, ID=100μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3.2 | 4 | V | VGS=VDS, IDS=5mA, TC=25˚C | 2 |
| Gate Threshold Voltage | VGS(th) | 2.3 | V | VGS=VDS, IDS=5mA, TC=175˚C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | μA | VDS=650V, VGS=0V | 2 | |
| Gate-Source Leakage Current | IGSS | 50 | 200 | nA | VGS=18V, VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 45 | 65 | mΩ | VGS=18V, ID=20A, TC=25˚C | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 75 | mΩ | VGS=18V, ID=20A, TC=175˚C | 2 | ||
| Continuous Diode Forward Current | IS | 30 | A | TC=25˚C | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 0.95 | ℃/W | 2 | |||
| Thermal Resistance Junction to Ambient | RθJA | 35 | ℃/W | 2 | |||
| Transconductance | gfs | 12 | S | VDS=20V, ID=20A, TJ=25˚C | 2 | ||
| Transconductance | gfs | 11 | S | VDS=20V, ID=20A, TJ=175˚C | 2 | ||
| Input Capacitance | Ciss | 1100 | pF | VGS=0V, VDS=400V, f=1MHz, VAC=25mV | 2 | ||
| Output Capacitance | Coss | 56 | pF | VGS=0V, VDS=400V, f=1MHz, VAC=25mV | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VGS=0V, VDS=400V, f=1MHz, VAC=25mV | 2 | ||
| Turn-On Switching Energy | EON | 110 | μJ | VDS=400V, VGS=-5/18V, ID=20A, RG(ext)=0Ω | 2 | ||
| Turn-Off Switching Energy | EOFF | 32 | μJ | VDS=400V, VGS=-5/18V, ID=20A, RG(ext)=0Ω | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Rise Time | tr | 45 | ns | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Turn-Off Delay Time | td(off) | 13 | ns | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Fall Time | tf | 10 | ns | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Internal Gate Resistance | RG(int) | 6 | Ω | f=1 MHz, VAC=25mV | 2 | ||
| Gate to Source Charge | Qgs | 21 | nC | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Gate to Drain Charge | Qgd | 14 | nC | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Total Gate Charge | Qg | 75 | nC | VDD=400V, VGS=-0/20V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 3.4 | V | VGS=-5V, ISD=10A, TJ=25 °C | 2 | ||
| Diode Forward Voltage | VSD | 3.2 | V | VGS=-5V, ISD=10A, TJ=175 °C | 2 | ||
| Reverse Recovery Time | trr | 20 | ns | VGS=-5V, ISD=20A, VR=400V, dif/dt=1200A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 65 | nC | VGS=-5V, ISD=20A, VR=400V, dif/dt=1200A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 8 | A | VGS=-5V, ISD=20A, VR=400V, dif/dt=1200A/μs | 2 |
CAD (KiCad official)
- Symbol:
CI40N65SM - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ci40n65sm-etched.step/ci40n65sm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ci40n65sm.step/ci40n65sm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (5 pp, sha256
52d1b4988a2592bf, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).