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CEM6867

CET(Chino-Excel Tech) · MOSFETs · SOP-8

CEM6867 from CET(Chino-Excel Tech), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the Q1 P-channel MOSFET; the device is rated VDS = -60 V, VGS = ±20 V, and ID = -3.1 A continuous.
2 G1 input Gate of the Q1 P-channel MOSFET; gate-source voltage is rated ±20 V (VGS).
3 S2 passive Source of the Q2 P-channel MOSFET; the device is rated VDS = -60 V, VGS = ±20 V, and ID = -3.1 A continuous.
4 G2 input Gate of the Q2 P-channel MOSFET; gate-source voltage is rated ±20 V (VGS).
5 D2 passive Drain of the Q2 P-channel MOSFET; drain-source voltage is rated -60 V (VDS).
6 D2 passive Drain of the Q2 P-channel MOSFET (internally tied to pin 5); drain-source voltage is rated -60 V (VDS).
7 D1 passive Drain of the Q1 P-channel MOSFET; drain-source voltage is rated -60 V (VDS).
8 D1 passive Drain of the Q1 P-channel MOSFET (internally tied to pin 7); drain-source voltage is rated -60 V (VDS).

Key specifications

Parameter Value
Manufacturer CET(Chino-Excel Tech)
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -3.1 A 1
Drain Current-Pulsed IDM -12 A 1
Maximum Power Dissipation PD 2 W 1
Operating and Store Temperature Range TJ,Tstg -55 150 C 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60V, VGS = 0V 2
Gate Body Leakage Current, Forward IGSSF 100 nA VGS = 20V, VDS = 0V 2
Gate Body Leakage Current, Reverse IGSSR -100 nA VGS = -20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) -1 -3 V VGS = VDS, ID = -250µA 2
Static Drain-Source On-Resistance RDS(on) 100 130 mΩ VGS = -10V, ID = -3.1A 2
Static Drain-Source On-Resistance RDS(on) 170 mΩ VGS = -4.5V, ID = -2.8A 2
Drain-Source Diode Forward Current IS -1.5 A 2
Drain-Source Diode Forward Voltage VSD -1.2 V VGS = 0V, IS = -1.5A 2

CAD (KiCad official)

  • Symbol: CEM6867
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cem6867-etched.step / cem6867-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cem6867.step / cem6867.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CET(Chino-Excel Tech) datasheet (4 pp, sha256 e469e88a08b20a66, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF