component
CEM3139
Public Made by Adomby adom
CET(Chino-Excel Tech) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| cem3139-etched.glb | 7d ago |
| cem3139-etched.step | 7d ago |
| cem3139-hero.glb | 7d ago |
| cem3139-hero.overlay.json | 7d ago |
| cem3139.glb | 7d ago |
| cem3139.kicad_mod | 7d ago |
| cem3139.kicad_sym | 7d ago |
| cem3139.lbr | 7d ago |
| cem3139.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| verification.json | 7d ago |
CEM3139
CET(Chino-Excel Tech) · MOSFETs · SOP-8
CEM3139 from CET(Chino-Excel Tech), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of channel 1 of the dual MOSFET; the absolute maximum ratings for this device are 20V drain-source (N-channel) and -30V (P-channel). |
| 2 | G1 | input | Gate of channel 1; gate-source voltage is rated ±12V per the absolute maximum ratings. |
| 3 | S2 | passive | Source terminal of channel 2 of the dual MOSFET; the absolute maximum ratings for this device are 20V drain-source (N-channel) and -30V (P-channel). |
| 4 | G2 | input | Gate of channel 2; gate-source voltage is rated ±12V per the absolute maximum ratings. |
| 5 | D2 | passive | Drain terminal of channel 2, tied internally to pin 6; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings. |
| 6 | D2 | passive | Drain terminal of channel 2, tied internally to pin 5; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings. |
| 7 | D1 | passive | Drain terminal of channel 1, tied internally to pin 8; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings. |
| 8 | D1 | passive | Drain terminal of channel 1, tied internally to pin 7; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CET(Chino-Excel Tech) |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | N-Channel | 1 | ||
| Drain-Source Voltage | VDS | -30 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 9 | A | N-Channel | 1 | ||
| Drain Current-Continuous | ID | -6 | A | P-Channel | 1 | ||
| Drain Current-Pulsed | IDM | 36 | A | N-Channel | 1 | ||
| Drain Current-Pulsed | IDM | -24 | A | P-Channel | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | 1 | |||
| Operating and Store Temperature Range | TJ,Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 1 | V | VGS = VDS, ID = 250µA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 12 | 16 | mΩ | VGS = 4.5V, ID = 6.4A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 15 | 20 | mΩ | VGS = 2.5V, ID = 4.5A | 2 | |
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 12V, VDS = 0V | 2 | ||
| Gate Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -12V, VDS = 0V | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250µA | 3 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VGS = VDS, ID = -250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 34 | mΩ | VGS = -10V, ID = -6A | 3 | ||
| Static Drain-Source On-Resistance | RDS(on) | 52 | mΩ | VGS = -4.5V, ID = -5A | 3 | ||
| Gate Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 12V, VDS = 0V | 3 | ||
| Gate Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -12V, VDS = 0V | 3 |
CAD (KiCad official)
- Symbol:
CEM3139 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cem3139-etched.step/cem3139-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cem3139.step/cem3139.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CET(Chino-Excel Tech) datasheet (7 pp, sha256
4ba8177654a2147f, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).