component

CEM3139

Public Made by Adom

by adom

CET(Chino-Excel Tech) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcem3139factory-2.0.0extractor-text

Verified CEM3139

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: CEM3139 · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-jh9kt7o6/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ cem3139.kicad_sym✓ cem3139.kicad_mod✓ cem3139.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

CEM3139

CET(Chino-Excel Tech) · MOSFETs · SOP-8

CEM3139 from CET(Chino-Excel Tech), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of channel 1 of the dual MOSFET; the absolute maximum ratings for this device are 20V drain-source (N-channel) and -30V (P-channel).
2 G1 input Gate of channel 1; gate-source voltage is rated ±12V per the absolute maximum ratings.
3 S2 passive Source terminal of channel 2 of the dual MOSFET; the absolute maximum ratings for this device are 20V drain-source (N-channel) and -30V (P-channel).
4 G2 input Gate of channel 2; gate-source voltage is rated ±12V per the absolute maximum ratings.
5 D2 passive Drain terminal of channel 2, tied internally to pin 6; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings.
6 D2 passive Drain terminal of channel 2, tied internally to pin 5; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings.
7 D1 passive Drain terminal of channel 1, tied internally to pin 8; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings.
8 D1 passive Drain terminal of channel 1, tied internally to pin 7; drain current is rated 9A (N-channel) and -6A (P-channel) per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer CET(Chino-Excel Tech)
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V N-Channel 1
Drain-Source Voltage VDS -30 V P-Channel 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 9 A N-Channel 1
Drain Current-Continuous ID -6 A P-Channel 1
Drain Current-Pulsed IDM 36 A N-Channel 1
Drain Current-Pulsed IDM -24 A P-Channel 1
Maximum Power Dissipation PD 2 W 1
Operating and Store Temperature Range TJ,Tstg -55 150 C 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA 2
Gate Threshold Voltage VGS(th) 0.4 1 V VGS = VDS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(on) 12 16 mΩ VGS = 4.5V, ID = 6.4A 2
Static Drain-Source On-Resistance RDS(on) 15 20 mΩ VGS = 2.5V, ID = 4.5A 2
Gate Body Leakage Current, Forward IGSSF 100 nA VGS = 12V, VDS = 0V 2
Gate Body Leakage Current, Reverse IGSSR -100 nA VGS = -12V, VDS = 0V 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA 3
Gate Threshold Voltage VGS(th) -1 -3 V VGS = VDS, ID = -250µA 3
Static Drain-Source On-Resistance RDS(on) 34 mΩ VGS = -10V, ID = -6A 3
Static Drain-Source On-Resistance RDS(on) 52 mΩ VGS = -4.5V, ID = -5A 3
Gate Body Leakage Current, Forward IGSSF 100 nA VGS = 12V, VDS = 0V 3
Gate Body Leakage Current, Reverse IGSSR -100 nA VGS = -12V, VDS = 0V 3

CAD (KiCad official)

  • Symbol: CEM3139
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cem3139-etched.step / cem3139-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cem3139.step / cem3139.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CET(Chino-Excel Tech) datasheet (7 pp, sha256 4ba8177654a2147f, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF