# CD4010BQDRQ1

**Texas Instruments** · Buffer/Driver/Transceiver · SOIC-16

CD4010BQDRQ1 from Texas Instruments, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | Supply for the output stage, connected to the DTL/TTL supply; recommended range 3 V to VDD. |
| 2 | G=A | output | Buffer output for input A (pin 3), swinging between GND and VCC. |
| 3 | A | input | Buffer input A, protected by the CMOS protection network; input range VCC to VDD. |
| 4 | H=B | output | Buffer output for input B (pin 5), swinging between GND and VCC. |
| 5 | B | input | Buffer input B, protected by the CMOS protection network; input range VCC to VDD. |
| 6 | I=C | output | Buffer output for input C (pin 7), swinging between GND and VCC. |
| 7 | C | input | Buffer input C, protected by the CMOS protection network; input range VCC to VDD. |
| 8 | VSS | power_in | Ground/negative supply reference; all supply voltages are referenced to VSS. |
| 9 | D | input | Buffer input D, protected by the CMOS protection network; input range VCC to VDD. |
| 10 | J=D | output | Buffer output for input D (pin 9), swinging between GND and VCC. |
| 11 | E | input | Buffer input E, protected by the CMOS protection network; input range VCC to VDD. |
| 12 | K=E | output | Buffer output for input E (pin 11), swinging between GND and VCC. |
| 13 | NC | unconnected | No internal connection. |
| 14 | F | input | Buffer input F, protected by the CMOS protection network; input range VCC to VDD. |
| 15 | L=F | output | Buffer output for input F (pin 14), swinging between GND and VCC. |
| 16 | VDD | power_in | CMOS supply voltage, 3 V to 18 V recommended (absolute max -0.5 to +20 V) referenced to VSS. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-16 |
| Category | Logic ICs |
| Pins | 16 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage range | VDD | 3 |  | 18 | V |  | 3 |
| DC supply voltage range | VDD | -0.5 |  | 20 | V | voltages referenced to VSS terminal | 3 |
| DC input current, any one input |  | -10 |  | 10 | mA | any one input | 3 |
| Power dissipation per package | PD |  |  | 500 | mW | TA = -40°C to +100°C | 3 |
| Power dissipation per package at derated temperature | PD |  |  | 200 | mW | TA = +100°C to +125°C; derate linearly at 12 mW/°C to 200 mW | 3 |
| Operating temperature range | TA | -40 |  | 125 | °C |  | 3 |
| Storage temperature range | Tstg | -65 |  | 150 | °C |  | 3 |
| Latch-up performance |  |  |  | 100 | mA | per JESD 78, Class I | 3 |
| ESD human-body model (HBM) |  |  |  | 500 | V | Human-body model (HBM); tested in accordance with AEC-Q100 | 3 |
| ESD machine model (MM) |  |  |  | 100 | V | Machine model (MM) | 3 |
| ESD charged-device model (CDM) |  |  |  | 1000 | V | Charged-Device Model (CDM) | 3 |
| Max quiescent device current | IDD |  |  | 1 | µA | VO=0 V, VIN=5 V, VDD=5 V, +25°C | 4 |
| Max quiescent device current | IDD |  |  | 2 | µA | VO=0 V, VIN=10 V, VDD=10 V, +25°C | 4 |
| Max quiescent device current | IDD |  |  | 4 | µA | VO=0 V, VIN=15 V, VDD=15 V, +25°C | 4 |
| Max quiescent device current | IDD |  |  | 20 | µA | VO=0 V, VIN=20 V, VDD=20 V, +25°C | 4 |
| Output voltage low-level | VOL |  |  | 0.05 | V | VDD=5 V | 4 |
| Output voltage high-level | VOH | 4.95 |  |  | V | VDD=5 V | 4 |
| Output voltage high-level | VOH | 9.95 |  |  | V | VDD=10 V | 4 |
| Output voltage high-level | VOH | 14.95 |  |  | V | VDD=15 V | 4 |
| Input low voltage | VIL |  |  | 1.5 | V | VO=0.5 V, VDD=5 V | 4 |
| Input low voltage | VIL |  |  | 3 | V | VO=1 V, VDD=10 V | 4 |
| Input low voltage | VIL |  |  | 4 | V | VO=1.5 V, VDD=15 V | 4 |
| Input high voltage | VIH | 3.5 |  |  | V | VO=4.5 V, VDD=5 V | 4 |
| Input high voltage | VIH | 7 |  |  | V | VO=9 V, VDD=10 V | 4 |
| Input high voltage | VIH | 11 |  |  | V | VO=13.5 V, VDD=15 V | 4 |
| Input current | IIN | -0.1 |  | 0.1 | µA | VO=0 V, VIN=18 V, VDD=18 V, +25°C | 4 |
| Propagation delay time low-to-high | tPLH |  | 100 | 200 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=5 V, VI=5 V, VCC=5 V | 5 |
| Propagation delay time low-to-high | tPLH |  | 50 | 100 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=10 V, VI=10 V, VCC=10 V | 5 |
| Propagation delay time low-to-high | tPLH |  | 35 | 70 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=15 V, VI=15 V, VCC=15 V | 5 |
| Propagation time high-to-low | tPHL |  | 65 | 130 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=5 V, VI=5 V, VCC=5 V | 5 |
| Propagation time high-to-low | tPHL |  | 35 | 70 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=10 V, VI=10 V, VCC=10 V | 5 |
| Propagation time high-to-low | tPHL |  | 30 | 70 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=10 V, VI=10 V, VCC=5 V | 5 |
| Propagation time high-to-low | tPHL |  | 25 | 50 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=15 V, VI=15 V, VCC=15 V | 5 |
| Propagation time high-to-low | tPHL |  | 20 | 40 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=15 V, VI=15 V, VCC=5 V | 5 |
| Transition time low-to-high | tTLH |  | 150 | 350 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=5 V, VI=5 V, VCC=5 V | 5 |
| Transition time low-to-high | tTLH |  | 75 | 150 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=10 V, VI=10 V, VCC=10 V | 5 |
| Transition time low-to-high | tTLH |  | 55 | 110 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=15 V, VI=15 V, VCC=15 V | 5 |
| Transition time high-to-low | tTHL |  | 35 | 90 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=5 V, VI=5 V, VCC=5 V | 5 |
| Transition time high-to-low | tTHL |  | 20 | 45 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=10 V, VI=10 V, VCC=10 V | 5 |
| Transition time high-to-low | tTHL |  | 15 | 40 | ns | TA=25°C, tr/tf=20 ns, CL=50 pF, RL=200 kΩ; VDD=15 V, VI=15 V, VCC=15 V | 5 |
| Input capacitance | CIN |  | 5 | 7.5 | pF |  | 5 |

## CAD (KiCad official)

- Symbol: `CD4010BQDRQ1`
- Footprint: `Package_SO:SOIC-16_3.9x9.9mm_P1.27mm`
- 3D model: SOIC-16 (KiCad packages3D, STEP)
- 3D model files: `cd4010bqdrq1-etched.step` / `cd4010bqdrq1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cd4010bqdrq1.step` / `cd4010bqdrq1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/cd4010b-q1) (14 pp, sha256 `9cde4febc2db0655`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cd4010bqdrq1-datasheet.pdf)