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CAT25080VI-GT3

Public Made by Adom

by adom

onsemi EEPROM, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CAT25080VI-GT3

onsemi · EEPROM · SOIC-8

CAT25080VI-GT3 from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS input Chip select input that enables/disables the device; when high SO is tri-stated and the device is in standby, and each session needs a high-to-low transition at start and low-to-high at end.
2 SO tri_state Serial data output that shifts data out on the falling edge of SCK in SPI modes (0,0) and (1,1), and is high impedance when CS is high or during hold.
3 WP input Write protect input that allows all write operations when high, and disables Status Register writes when low with the WPEN bit set to 1.
4 VSS power_in Ground.
5 SI input Serial data input that accepts op-codes, addresses and data, latched on the rising edge of SCK in SPI modes (0,0) and (1,1).
6 SCK input Serial clock input from the host used to synchronize communication, up to 20 MHz at 5 V.
7 HOLD input Hold input that pauses serial transmission when taken low (with SCK low) and resumes when taken high; tie to VCC directly or through a resistor when unused.
8 VCC power_in Power supply, 1.8 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Temperature TA -45 130 °C 2
Storage Temperature TSTG -65 150 °C 2
Voltage on any Pin with Respect to Ground VIN -0.5 0.5 V Respect to Ground (Note 1); max printed as VCC + 0.5 V 2
Endurance NEND 1e+06 Program / Erase Cycles Page Mode, VCC = 5 V, 25°C (Note 3) 2
Data Retention TDR 100 Years 2
Supply Current (Read, Write) ICC 2 mA Read, Write, VCC = 5.0 V, SO open; 10 MHz / −40°C to +85°C 2
Standby Current (WP = VCC) ISB1 2 µA VIN = GND or VCC, CS = VCC, WP = VCC, VCC = 5.0 V 2
Standby Current (WP = GND) ISB2 4 µA VIN = GND or VCC, CS = VCC, WP = GND, VCC = 5.0 V; TA = −40°C to +85°C 2
Input Leakage Current IL -2 2 µA VIN = GND or VCC 2
Output Leakage Current ILO -1 1 µA CS = VCC, VOUT = GND or VCC; TA = −40°C to +85°C 2
Input Low Voltage VIL -0.5 0.3 V Max printed as 0.3 VCC (VCC-relative) 2
Input High Voltage VIH 0.7 0.5 V Min printed as 0.7 VCC; max printed as VCC + 0.5 V (VCC-relative) 2
Output Low Voltage (VOL1) VOL1 0.4 V VCC > 2.5 V, IOL = 3.0 mA 2
Output High Voltage (VOH1) VOH1 -0.8 V VCC > 2.5 V, IOH = −1.6 mA; min printed as VCC − 0.8 V (VCC-relative) 2
Output Low Voltage (VOL2) VOL2 0.2 V VCC > 1.8 V, IOL = 150 µA 2
Output High Voltage (VOH2) VOH2 -0.2 V VCC > 1.8 V, IOH = −100 µA; min printed as VCC − 0.2 V (VCC-relative) 2
Output Capacitance (SO) COUT 8 pF VOUT = 0 V; TA = 25°C, f = 1.0 MHz, VCC = +5.0 V 2
Input Capacitance (CS, SCK, SI, WP, HOLD) CIN 8 pF VIN = 0 V; TA = 25°C, f = 1.0 MHz, VCC = +5.0 V 2
Clock Frequency fSCK 5 MHz VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Data Setup Time tSU 20 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Data Hold Time tH 20 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
SCK High Time tWH 75 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
SCK Low Time tWL 75 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
HOLD to Output Low Z tLZ 50 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Input Rise Time tRI 2 µs VCC = 1.8 V − 5.5 V, −40°C to +85°C (Note 10) 4
Input Fall Time tFI 2 µs VCC = 1.8 V − 5.5 V, −40°C to +85°C (Note 10) 4
HOLD Setup Time tHD 0 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
HOLD Hold Time tCD 10 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Output Valid from Clock Low tV 70 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Output Hold Time tHO 0 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Output Disable Time tDIS 50 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
HOLD to Output High Z tHZ 100 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
CS High Time tCS 80 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
CS Setup Time tCSS 30 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
CS Hold Time tCSH 30 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
CS Inactive Setup Time tCNS 20 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
CS Inactive Hold Time tCNH 20 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
WP Setup Time tWPS 10 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
WP Hold Time tWPH 10 ns VCC = 1.8 V − 5.5 V, −40°C to +85°C 4
Write Cycle Time tWC 5 ms VCC = 1.8 V − 5.5 V, −40°C to +85°C (Note 12) 4
Power-up to Read Operation tPUR 0.1 1 ms VCC stable at operating voltage (Note 11) 4
Power-up to Write Operation tPUW 0.1 1 ms VCC stable at operating voltage (Note 11) 4
Supply Voltage Range VCC 1.8 5.5 V 1
Operating Temperature (Industrial) TA -40 85 °C Industrial grade (I) per ordering information 11

CAD (KiCad official)

  • Symbol: CAT25080VI-GT3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: cat25080vi-gt3-etched.step / cat25080vi-gt3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cat25080vi-gt3.step / cat25080vi-gt3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (15 pp, sha256 2cb7ee5d6cc1677c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF