# C3M0045065K

**Wolfspeed** · SiC MOSFETs · TO-247-4L

C3M0045065K from Wolfspeed, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, also the mounting tab (Pin 1, TAB), rated for VDSS 650 V at TC = 25 ˚C and continuous ID of 49 A at VGS = 15 V, TC = 25 ˚C. |
| 2 | Power Source | passive | Main power source terminal carrying the drain current, separated from the gate-driver return by the dedicated driver source pin. |
| 3 | Driver Source | passive | Separate source connection for the gate driver, provided by the optimized package to keep gate-drive current apart from the power source path. |
| 4 | Gate | input | Gate input; the datasheet gives maximum VGS of -8/+19 V under transient events below 100 ns, with recommended turn-on of 15 V and turn-off of -4 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wolfspeed |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V | TC = 25 ˚C | 1 |
| Gate-Source Voltage (transient <100 ns) | VGS | -8 |  | 19 | V | Under transient events < 100 ns; Fig. 29 | 1 |
| Continuous Drain Current | ID |  |  | 49 | A | VGS = 15 V, TC = 25˚C; Fig. 19 | 1 |
| Continuous Drain Current | ID |  |  | 35 | A | VGS = 15 V, TC = 100˚C | 1 |
| Pulsed Drain Current | ID(pulse) |  |  | 132 | A | Pulse width tP limited by Tjmax | 1 |
| Power Dissipation | PD |  |  | 176 | W | TC=25˚C, TJ = 175 ˚C; Fig. 20 | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -40 |  | 175 | ˚C |  | 1 |
| Solder Temperature | TL |  |  | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 |
| Gate-Source Recommended Turn-On Voltage | VGSon |  | 15 |  | V | Static; Fig. 29 | 2 |
| Gate-Source Recommended Turn-Off Voltage | VGSoff |  | -4 |  | V | Static; Fig. 29 | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0 V, ID = 100 μA | 2 |
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.6 | 3.6 | V | VDS = VGS, ID = 4.84 mA; Fig. 11 | 2 |
| Gate Threshold Voltage | VGS(th) |  | 2.2 |  | V | VDS = VGS, ID = 4.84 mA, TJ = 175ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 50 | μA | VDS = 650 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current | IGSS |  | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 45 | 60 | mΩ | VGS = 15 V, ID = 17.6 A; Fig. 4, 5, 6 | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 61 |  | mΩ | VGS = 15 V, ID = 17.6 A, TJ = 175ºC | 2 |
| Transconductance | gfs |  | 12 |  | S | VDS= 20 V, IDS= 17.6 A; Fig. 7 | 2 |
| Transconductance | gfs |  | 11 |  | S | VDS= 20 V, IDS= 17.6 A, TJ = 175ºC | 2 |
| Input Capacitance | Ciss |  | 1621 |  | pF | VGS = 0 V, VDS = 0V to 600 V, F = 1 Mhz, VAC = 25 mV; Fig. 17, 18 | 2 |
| Output Capacitance | Coss |  | 101 |  | pF | VGS = 0 V, VDS = 0V to 600 V, F = 1 Mhz, VAC = 25 mV; Fig. 17, 18 | 2 |
| Reverse Transfer Capacitance | Crss |  | 8 |  | pF | VGS = 0 V, VDS = 0V to 600 V, F = 1 Mhz, VAC = 25 mV; Fig. 17, 18 | 2 |
| Effective Output Capacitance (Energy Related) | Co(er) |  | 126 |  | pF | VGS = 0 V, VDS = 0V to 400 V; Note 1 | 2 |
| Effective Output Capacitance (Time Related) | Co(tr) |  | 178 |  | pF |  | 2 |
| Coss Stored Energy | Eoss |  | 20 |  | μJ | VDS = 600 V, F = 1 Mhz; Fig. 16 | 2 |
| Turn-On Switching Energy (Body Diode) | EON |  | 57 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = internal body diode; Fig. 25 | 2 |
| Turn Off Switching Energy (Body Diode) | EOFF |  | 14 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = internal body diode; Fig. 25 | 2 |
| Turn-On Switching Energy (External Diode) | EON |  | 44 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = External SiC diode; Fig. 25 | 2 |
| Turn Off Switching Energy (External Diode) | EOFF |  | 14 |  | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = External SiC diode; Fig. 25 | 2 |
| Turn-On Delay Time | td(on) |  | 9 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 |
| Rise Time | tr |  | 12 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 |
| Turn-Off Delay Time | td(off) |  | 18 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 |
| Fall Time | tf |  | 6 |  | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 |
| Internal Gate Resistance | RG(int) |  | 3 |  | Ω | f = 1 MHz, VAC = 25 mV | 2 |
| Gate to Source Charge | Qgs |  | 21 |  | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A; per IEC60747-8-4 pg 21 | 2 |
| Gate to Drain Charge | Qgd |  | 18 |  | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A; Fig. 12 | 2 |
| Total Gate Charge | Qg |  | 63 |  | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A; Fig. 12 | 2 |
| Diode Forward Voltage | VSD |  | 4.8 |  | V | VGS = -4 V, ISD = 8.8 A, TJ = 25 °C; Fig. 8, 9, 10 | 3 |
| Diode Forward Voltage | VSD |  | 4.2 |  | V | VGS = -4 V, ISD = 8.8 A, TJ = 175 °C | 3 |
| Continuous Diode Forward Current | IS |  | 29 |  | A | VGS = -4 V, TC = 25˚C | 3 |
| Diode Pulse Current | IS, pulse |  | 132 |  | A | VGS = -4 V, pulse width tP limited by Tjmax | 3 |
| Reverse Recovery Time | trr |  | 13 |  | ns | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 5215 A/µs, TJ = 175 °C | 3 |
| Reverse Recovery Charge | Qrr |  | 247 |  | nC | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 5215 A/µs, TJ = 175 °C | 3 |
| Peak Reverse Recovery Current | Irrm |  | 36 |  | A | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 5215 A/µs, TJ = 175 °C | 3 |
| Reverse Recovery Time | trr |  | 18 |  | ns | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 1775 A/µs, TJ = 175 °C | 3 |
| Reverse Recovery Charge | Qrr |  | 171 |  | nC | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 1775 A/µs, TJ = 175 °C | 3 |
| Peak Reverse Recovery Current | Irrm |  | 16 |  | A | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 1775 A/µs, TJ = 175 °C | 3 |
| Thermal Resistance from Junction to Case | RθJC |  | 0.85 |  | °C/W | Fig. 21 | 3 |
| Thermal Resistance From Junction to Ambient | RθJA |  | 40 |  | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `C3M0045065K`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `c3m0045065k-etched.step` / `c3m0045065k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `c3m0045065k.step` / `c3m0045065k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wolfspeed datasheet](docs/c3m0045065k-datasheet.pdf) (12 pp, sha256 `45433d3d2ada7882`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/c3m0045065k-datasheet.pdf)