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C3M0045065K
Public Made by Adomby adom
Wolfspeed SiC MOSFETs, TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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C3M0045065K
Wolfspeed · SiC MOSFETs · TO-247-4L
C3M0045065K from Wolfspeed, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, also the mounting tab (Pin 1, TAB), rated for VDSS 650 V at TC = 25 ˚C and continuous ID of 49 A at VGS = 15 V, TC = 25 ˚C. |
| 2 | Power Source | passive | Main power source terminal carrying the drain current, separated from the gate-driver return by the dedicated driver source pin. |
| 3 | Driver Source | passive | Separate source connection for the gate driver, provided by the optimized package to keep gate-drive current apart from the power source path. |
| 4 | Gate | input | Gate input; the datasheet gives maximum VGS of -8/+19 V under transient events below 100 ns, with recommended turn-on of 15 V and turn-off of -4 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wolfspeed |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC = 25 ˚C | 1 | ||
| Gate-Source Voltage (transient <100 ns) | VGS | -8 | 19 | V | Under transient events < 100 ns; Fig. 29 | 1 | |
| Continuous Drain Current | ID | 49 | A | VGS = 15 V, TC = 25˚C; Fig. 19 | 1 | ||
| Continuous Drain Current | ID | 35 | A | VGS = 15 V, TC = 100˚C | 1 | ||
| Pulsed Drain Current | ID(pulse) | 132 | A | Pulse width tP limited by Tjmax | 1 | ||
| Power Dissipation | PD | 176 | W | TC=25˚C, TJ = 175 ˚C; Fig. 20 | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -40 | 175 | ˚C | 1 | ||
| Solder Temperature | TL | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 | ||
| Gate-Source Recommended Turn-On Voltage | VGSon | 15 | V | Static; Fig. 29 | 2 | ||
| Gate-Source Recommended Turn-Off Voltage | VGSoff | -4 | V | Static; Fig. 29 | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0 V, ID = 100 μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.6 | 3.6 | V | VDS = VGS, ID = 4.84 mA; Fig. 11 | 2 |
| Gate Threshold Voltage | VGS(th) | 2.2 | V | VDS = VGS, ID = 4.84 mA, TJ = 175ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | μA | VDS = 650 V, VGS = 0 V | 2 | |
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 45 | 60 | mΩ | VGS = 15 V, ID = 17.6 A; Fig. 4, 5, 6 | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 61 | mΩ | VGS = 15 V, ID = 17.6 A, TJ = 175ºC | 2 | ||
| Transconductance | gfs | 12 | S | VDS= 20 V, IDS= 17.6 A; Fig. 7 | 2 | ||
| Transconductance | gfs | 11 | S | VDS= 20 V, IDS= 17.6 A, TJ = 175ºC | 2 | ||
| Input Capacitance | Ciss | 1621 | pF | VGS = 0 V, VDS = 0V to 600 V, F = 1 Mhz, VAC = 25 mV; Fig. 17, 18 | 2 | ||
| Output Capacitance | Coss | 101 | pF | VGS = 0 V, VDS = 0V to 600 V, F = 1 Mhz, VAC = 25 mV; Fig. 17, 18 | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VGS = 0 V, VDS = 0V to 600 V, F = 1 Mhz, VAC = 25 mV; Fig. 17, 18 | 2 | ||
| Effective Output Capacitance (Energy Related) | Co(er) | 126 | pF | VGS = 0 V, VDS = 0V to 400 V; Note 1 | 2 | ||
| Effective Output Capacitance (Time Related) | Co(tr) | 178 | pF | 2 | |||
| Coss Stored Energy | Eoss | 20 | μJ | VDS = 600 V, F = 1 Mhz; Fig. 16 | 2 | ||
| Turn-On Switching Energy (Body Diode) | EON | 57 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = internal body diode; Fig. 25 | 2 | ||
| Turn Off Switching Energy (Body Diode) | EOFF | 14 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = internal body diode; Fig. 25 | 2 | ||
| Turn-On Switching Energy (External Diode) | EON | 44 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = External SiC diode; Fig. 25 | 2 | ||
| Turn Off Switching Energy (External Diode) | EOFF | 14 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, TJ = 175ºC, FWD = External SiC diode; Fig. 25 | 2 | ||
| Turn-On Delay Time | td(on) | 9 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 | ||
| Rise Time | tr | 12 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 | ||
| Turn-Off Delay Time | td(off) | 18 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 | ||
| Fall Time | tf | 6 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 17.6 A, RG(ext) = 2.5 Ω, L= 99 μH, inductive load; Fig. 26 | 2 | ||
| Internal Gate Resistance | RG(int) | 3 | Ω | f = 1 MHz, VAC = 25 mV | 2 | ||
| Gate to Source Charge | Qgs | 21 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A; per IEC60747-8-4 pg 21 | 2 | ||
| Gate to Drain Charge | Qgd | 18 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A; Fig. 12 | 2 | ||
| Total Gate Charge | Qg | 63 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 17.6 A; Fig. 12 | 2 | ||
| Diode Forward Voltage | VSD | 4.8 | V | VGS = -4 V, ISD = 8.8 A, TJ = 25 °C; Fig. 8, 9, 10 | 3 | ||
| Diode Forward Voltage | VSD | 4.2 | V | VGS = -4 V, ISD = 8.8 A, TJ = 175 °C | 3 | ||
| Continuous Diode Forward Current | IS | 29 | A | VGS = -4 V, TC = 25˚C | 3 | ||
| Diode Pulse Current | IS, pulse | 132 | A | VGS = -4 V, pulse width tP limited by Tjmax | 3 | ||
| Reverse Recovery Time | trr | 13 | ns | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 5215 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Charge | Qrr | 247 | nC | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 5215 A/µs, TJ = 175 °C | 3 | ||
| Peak Reverse Recovery Current | Irrm | 36 | A | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 5215 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Time | trr | 18 | ns | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 1775 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Charge | Qrr | 171 | nC | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 1775 A/µs, TJ = 175 °C | 3 | ||
| Peak Reverse Recovery Current | Irrm | 16 | A | VGS = -4 V, ISD = 17.6 A, VR = 400 V, dif/dt = 1775 A/µs, TJ = 175 °C | 3 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.85 | °C/W | Fig. 21 | 3 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 40 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
C3M0045065K - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
c3m0045065k-etched.step/c3m0045065k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);c3m0045065k.step/c3m0045065k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wolfspeed datasheet (12 pp, sha256
45433d3d2ada7882, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).