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C3M0016120K

Wolfspeed · SiC MOSFETs · TO-247-4

C3M0016120K from Wolfspeed, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal (also connected to the TAB), rated for VDS up to 1200 V and continuous drain current of 115 A at TC = 25 °C.
2 Power Source passive Power source terminal carrying the main drain-source current path, with continuous current of 115 A at TC = 25 °C.
3 Driver Source passive Separate driver source (Kelvin source) pin for the gate drive return to reduce switching losses and minimize gate ringing.
4 Gate input Gate terminal with static VGS rating of -4/+15 V and dynamic rating of -8/+19 V.

Key specifications

Parameter Value
Manufacturer Wolfspeed
Package TO-247-4
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source Voltage VDSmax 1200 V VGS = 0 V, ID = 100 μA 1
Gate - Source Voltage (dynamic) VGSmax -8 19 V AC (f >1 Hz) 1
Gate - Source Voltage (static) VGSop -4 15 V Static 1
Continuous Drain Current ID 115 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 85 A VGS = 15 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 250 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 556 W TC=25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 23 mA 2
Gate Threshold Voltage VGS(th) 2 V VDS = VGS, ID = 23 mA, TJ = 175ºC 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 1200 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 11.2 16 22.3 mΩ VGS = 15 V, ID = 75 A 2
Drain-Source On-State Resistance RDS(on) 28.8 mΩ VGS = 15 V, ID = 75 A, TJ = 175ºC 2
Transconductance gfs 53 S VDS= 20 V, IDS= 75 A 2
Transconductance gfs 47 S VDS= 20 V, IDS= 75 A, TJ = 175ºC 2
Input Capacitance Ciss 6085 pF VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV 2
Output Capacitance Coss 230 pF VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV 2
Reverse Transfer Capacitance Crss 13 pF VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV 2
Coss Stored Energy Eoss 130 μJ Fig. 16 2
Turn-On Switching Energy (SiC Diode FWD) EON 1.1 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn Off Switching Energy (SiC Diode FWD) EOFF 0.8 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn-On Switching Energy (Body Diode FWD) EON 2.3 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn Off Switching Energy (Body Diode FWD) EOFF 0.6 mJ VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC 2
Turn-On Delay Time td(on) 34 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load 2
Rise Time tr 33 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load 2
Turn-Off Delay Time td(off) 65 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load 2
Fall Time tf 13 ns VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load 2
Internal Gate Resistance RG(int) 2.6 Ω f = 1 MHz, VAC = 25 mV 2
Gate to Source Charge Qgs 67 nC VDS = 800 V, VGS = -4 V/15 V, ID = 75 A 2
Gate to Drain Charge Qgd 61 nC VDS = 800 V, VGS = -4 V/15 V, ID = 75 A, Per IEC60747-8-4 pg 21, Fig. 12 2
Total Gate Charge Qg 211 nC VDS = 800 V, VGS = -4 V/15 V, ID = 75 A 2
Diode Forward Voltage VSD 4.6 V VGS = -4 V, ISD = 37.5 A, TJ = 25 °C 3
Diode Forward Voltage VSD 4.2 V VGS = -4 V, ISD = 37.5 A, TJ = 175 °C 3
Continuous Diode Forward Current IS 112 A VGS = -4 V, TC = 25˚C 3
Diode pulse Current IS, pulse 250 A VGS = -4 V, pulse width tP limited by Tjmax 3
Reverse Recover time trr 30 ns VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 4000 A/µs, TJ = 175 °C 3
Reverse Recovery Charge Qrr 1238 nC VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 4000 A/µs, TJ = 175 °C 3
Peak Reverse Recovery Current Irrm 64 A VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 4000 A/µs, TJ = 175 °C 3
Reverse Recover time trr 27 ns VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 5500 A/µs, TJ = 175 °C 3
Reverse Recovery Charge Qrr 1261 nC VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 5500 A/µs, TJ = 175 °C 3
Peak Reverse Recovery Current Irrm 77 A VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 5500 A/µs, TJ = 175 °C 3
Thermal Resistance from Junction to Case RθJC 0.27 °C/W Fig. 21 3
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 3

CAD (KiCad official)

  • Symbol: C3M0016120K
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4 (KiCad packages3D, STEP)
  • 3D model files: c3m0016120k-etched.step / c3m0016120k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); c3m0016120k.step / c3m0016120k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wolfspeed datasheet (12 pp, sha256 25bb9399432ac81d, retrieved 2026-11-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF