C3M0016120K from Wolfspeed, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Drain	passive	Drain terminal (also connected to the TAB), rated for VDS up to 1200 V and continuous drain current of 115 A at TC = 25 °C.
2	Power Source	passive	Power source terminal carrying the main drain-source current path, with continuous current of 115 A at TC = 25 °C.
3	Driver Source	passive	Separate driver source (Kelvin source) pin for the gate drive return to reduce switching losses and minimize gate ringing.
4	Gate	input	Gate terminal with static VGS rating of -4/+15 V and dynamic rating of -8/+19 V.

Key specifications

Parameter	Value
Manufacturer	Wolfspeed
Package	TO-247-4
Category	Silicon Carbide (SiC) Devices
Pins	4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain - Source Voltage	VDSmax			1200	V	VGS = 0 V, ID = 100 μA	1
Gate - Source Voltage (dynamic)	VGSmax	-8		19	V	AC (f >1 Hz)	1
Gate - Source Voltage (static)	VGSop	-4		15	V	Static	1
Continuous Drain Current	ID			115	A	VGS = 15 V, TC = 25˚C	1
Continuous Drain Current	ID			85	A	VGS = 15 V, TC = 100˚C	1
Pulsed Drain Current	ID(pulse)			250	A	Pulse width tP limited by Tjmax	1
Power Dissipation	PD			556	W	TC=25˚C, TJ = 175 ˚C	1
Operating Junction and Storage Temperature	TJ, Tstg	-40		175	˚C		1
Solder Temperature	TL			260	˚C	1.6mm (0.063”) from case for 10s	1
Drain-Source Breakdown Voltage	V(BR)DSS		1200		V	VGS = 0 V, ID = 100 μA	2
Gate Threshold Voltage	VGS(th)	1.8	2.5	3.6	V	VDS = VGS, ID = 23 mA	2
Gate Threshold Voltage	VGS(th)		2		V	VDS = VGS, ID = 23 mA, TJ = 175ºC	2
Zero Gate Voltage Drain Current	IDSS		1	50	μA	VDS = 1200 V, VGS = 0 V	2
Gate-Source Leakage Current	IGSS		10	250	nA	VGS = 15 V, VDS = 0 V	2
Drain-Source On-State Resistance	RDS(on)	11.2	16	22.3	mΩ	VGS = 15 V, ID = 75 A	2
Drain-Source On-State Resistance	RDS(on)		28.8		mΩ	VGS = 15 V, ID = 75 A, TJ = 175ºC	2
Transconductance	gfs		53		S	VDS= 20 V, IDS= 75 A	2
Transconductance	gfs		47		S	VDS= 20 V, IDS= 75 A, TJ = 175ºC	2
Input Capacitance	Ciss		6085		pF	VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV	2
Output Capacitance	Coss		230		pF	VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV	2
Reverse Transfer Capacitance	Crss		13		pF	VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV	2
Coss Stored Energy	Eoss		130		μJ	Fig. 16	2
Turn-On Switching Energy (SiC Diode FWD)	EON		1.1		mJ	VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC	2
Turn Off Switching Energy (SiC Diode FWD)	EOFF		0.8		mJ	VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC	2
Turn-On Switching Energy (Body Diode FWD)	EON		2.3		mJ	VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC	2
Turn Off Switching Energy (Body Diode FWD)	EOFF		0.6		mJ	VDS = 800 V, VGS = -4 V/+15 V, ID = 75 A, RG(ext) = 2.5Ω, L= 65.7 μH, Tj = 175ºC	2
Turn-On Delay Time	td(on)		34		ns	VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load	2
Rise Time	tr		33		ns	VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load	2
Turn-Off Delay Time	td(off)		65		ns	VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load	2
Fall Time	tf		13		ns	VDD = 800 V, VGS = -4 V/15 V, RG(ext) = 2.5 Ω, ID = 75 A, L= 65.7, Timing relative to VDS, Inductive load	2
Internal Gate Resistance	RG(int)		2.6		Ω	f = 1 MHz, VAC = 25 mV	2
Gate to Source Charge	Qgs		67		nC	VDS = 800 V, VGS = -4 V/15 V, ID = 75 A	2
Gate to Drain Charge	Qgd		61		nC	VDS = 800 V, VGS = -4 V/15 V, ID = 75 A, Per IEC60747-8-4 pg 21, Fig. 12	2
Total Gate Charge	Qg		211		nC	VDS = 800 V, VGS = -4 V/15 V, ID = 75 A	2
Diode Forward Voltage	VSD		4.6		V	VGS = -4 V, ISD = 37.5 A, TJ = 25 °C	3
Diode Forward Voltage	VSD		4.2		V	VGS = -4 V, ISD = 37.5 A, TJ = 175 °C	3
Continuous Diode Forward Current	IS		112		A	VGS = -4 V, TC = 25˚C	3
Diode pulse Current	IS, pulse		250		A	VGS = -4 V, pulse width tP limited by Tjmax	3
Reverse Recover time	trr		30		ns	VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 4000 A/µs, TJ = 175 °C	3
Reverse Recovery Charge	Qrr		1238		nC	VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 4000 A/µs, TJ = 175 °C	3
Peak Reverse Recovery Current	Irrm		64		A	VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 4000 A/µs, TJ = 175 °C	3
Reverse Recover time	trr		27		ns	VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 5500 A/µs, TJ = 175 °C	3
Reverse Recovery Charge	Qrr		1261		nC	VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 5500 A/µs, TJ = 175 °C	3
Peak Reverse Recovery Current	Irrm		77		A	VGS = -4 V, ISD = 75 A, VR = 800 V, dif/dt = 5500 A/µs, TJ = 175 °C	3
Thermal Resistance from Junction to Case	RθJC		0.27		°C/W	Fig. 21	3
Thermal Resistance From Junction to Ambient	RθJA		40		°C/W		3

CAD (KiCad official)

Symbol: C3M0016120K
Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
3D model: TO-247-4 (KiCad packages3D, STEP)
3D model files: c3m0016120k-etched.step / c3m0016120k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); c3m0016120k.step / c3m0016120k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Wolfspeed datasheet (12 pp, sha256 25bb9399432ac81d, retrieved 2026-11-09, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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C3M0016120K

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