# BYV10MX-600PQ

**WeEn Semiconductors** · Fast Recovery / High Efficiency Diodes · TO-220F-2

BYV10MX-600PQ from WeEn Semiconductors, in a TO-220F-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the ultrafast diode (VRRM 600 V, IF(AV) 10 A). |
| 2 | A | passive | Anode of the ultrafast diode (VRRM 600 V, IF(AV) 10 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220F-2 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| forward voltage | VF |  | 1.5 | 2 | V | IF = 10 A; Tj = 25 °C; Fig. 6 | 6 |
| forward voltage | VF |  |  | 1.6 | V | IF = 10 A; Tj = 150 °C; Fig. 6 | 6 |
| reverse current | IR |  |  | 8 | μA | VR = 600 V; Tj = 25 °C | 6 |
| reverse current | IR |  |  | 120 | μA | VR = 600 V; Tj = 150 °C | 6 |
| reverse recovery time | trr |  | 24 | 35 | ns | IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| repetitive peak reverse voltage | VRRM |  |  | 600 | V |  | 3 |
| crest working reverse voltage | VRWM |  |  | 600 | V |  | 3 |
| reverse voltage DC | VR |  |  | 600 | V | DC | 3 |
| average forward current | IF(AV) |  |  | 10 | A | δ = 0.5; square-wave pulse; Th ≤ 73 °C; Fig. 1; Fig. 2; Fig. 3 | 3 |
| repetitive peak forward current | IFRM |  |  | 20 | A | δ = 0.5; tp = 25 μs; Th ≤ 73 °C; square-wave pulse | 3 |
| non-repetitive peak forward current | IFSM |  |  | 100 | A | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 | 3 |
| non-repetitive peak forward current | IFSM |  |  | 110 | A | tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 3 |
| storage temperature | Tstg | -65 |  | 175 | °C |  | 3 |
| junction temperature | Tj |  |  | 175 | °C |  | 3 |
| thermal resistance from junction to heatsink | Rth(j-h) |  |  | 5.3 | K/W | with heatsink compound; Fig. 5 | 5 |
| RMS isolation voltage | Visol(RMS) |  |  | 2500 | V | 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free | 5 |
| thermal resistance from junction to ambient free air | Rth(j-a) |  | 55 |  | K/W | in free air | 5 |
| isolation capacitance from cathode to external heatsink | Cisol |  | 10 |  | pF | from cathode to external heatsink | 5 |
| reverse charge | Qr |  | 105 |  | nC | IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| reverse charge | Qr |  | 282 |  | nC | IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 | 6 |
| reverse recovery time | trr |  | 45 |  | ns | IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| reverse recovery time | trr |  | 76 |  | ns | IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 | 6 |
| peak reverse recovery current | IRM |  | 4.6 |  | A | IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| peak reverse recovery current | IRM |  | 7.5 |  | A | IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 | 6 |

## CAD (KiCad official)

- Symbol: `BYV10MX-600PQ`
- Footprint: `Package_TO_SOT_THT:TO-220F-2_Vertical`
- 3D model: TO-220F-2 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WeEn Semiconductors datasheet](docs/byv10mx-600pq-datasheet.pdf) (11 pp, sha256 `d5a7958720608fb7`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/byv10mx-600pq-datasheet.pdf)