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BYV10MX-600PQ

WeEn Semiconductors · Fast Recovery / High Efficiency Diodes · TO-220F-2

BYV10MX-600PQ from WeEn Semiconductors, in a TO-220F-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the ultrafast diode (VRRM 600 V, IF(AV) 10 A).
2 A passive Anode of the ultrafast diode (VRRM 600 V, IF(AV) 10 A).

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-220F-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
forward voltage VF 1.5 2 V IF = 10 A; Tj = 25 °C; Fig. 6 6
forward voltage VF 1.6 V IF = 10 A; Tj = 150 °C; Fig. 6 6
reverse current IR 8 μA VR = 600 V; Tj = 25 °C 6
reverse current IR 120 μA VR = 600 V; Tj = 150 °C 6
reverse recovery time trr 24 35 ns IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 6
repetitive peak reverse voltage VRRM 600 V 3
crest working reverse voltage VRWM 600 V 3
reverse voltage DC VR 600 V DC 3
average forward current IF(AV) 10 A δ = 0.5; square-wave pulse; Th ≤ 73 °C; Fig. 1; Fig. 2; Fig. 3 3
repetitive peak forward current IFRM 20 A δ = 0.5; tp = 25 μs; Th ≤ 73 °C; square-wave pulse 3
non-repetitive peak forward current IFSM 100 A tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 3
non-repetitive peak forward current IFSM 110 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 3
storage temperature Tstg -65 175 °C 3
junction temperature Tj 175 °C 3
thermal resistance from junction to heatsink Rth(j-h) 5.3 K/W with heatsink compound; Fig. 5 5
RMS isolation voltage Visol(RMS) 2500 V 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free 5
thermal resistance from junction to ambient free air Rth(j-a) 55 K/W in free air 5
isolation capacitance from cathode to external heatsink Cisol 10 pF from cathode to external heatsink 5
reverse charge Qr 105 nC IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 6
reverse charge Qr 282 nC IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 6
reverse recovery time trr 45 ns IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 6
reverse recovery time trr 76 ns IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 6
peak reverse recovery current IRM 4.6 A IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 25 °C; Fig. 7 6
peak reverse recovery current IRM 7.5 A IF = 10 A; VR = 400 V; dIF/dt = 200 A/μs; Tj = 125 °C; Fig. 7 6

CAD (KiCad official)

  • Symbol: BYV10MX-600PQ
  • Footprint: Package_TO_SOT_THT:TO-220F-2_Vertical
  • 3D model: TO-220F-2 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (11 pp, sha256 d5a7958720608fb7, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF