component
BYC75W-1200PQ
Public Made by Adomby adom
WeEn Semiconductors Diodes - General Purpose, TO-247-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BYC75W-1200PQ
WeEn Semiconductors · Diodes - General Purpose · TO-247-2
BYC75W-1200PQ from WeEn Semiconductors, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the hyperfast power diode, rated for a repetitive peak reverse voltage VRRM of 1200 V and an average forward current IF(AV) of 75 A at Tmb ≤ 75 °C. |
| 2 | A | passive | Anode of the hyperfast power diode; the mounting base is connected to the cathode, so the heatsink is at cathode potential. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-247-2 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 1200 | V | 3 | |||
| Crest working reverse voltage | VRWM | 1200 | V | 3 | |||
| Reverse voltage DC | VR | 1200 | V | 3 | |||
| Average forward current | IF(AV) | 75 | A | δ = 0.5; square-wave pulse; Tmb ≤ 75 °C; Fig. 1; Fig. 2; Fig. 3 | 3 | ||
| Repetitive peak forward current | IFRM | 150 | A | δ = 0.5; tp = 25 μs; Tmb ≤ 75 °C; square-wave pulse | 3 | ||
| Non-repetitive peak forward current | IFSM | 600 | A | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 | 3 | ||
| Non-repetitive peak forward current | IFSM | 660 | A | tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 3 | ||
| Storage temperature | Tstg | -65 | 175 | °C | 3 | ||
| Junction temperature | Tj | 175 | °C | 3 | |||
| Thermal resistance from junction to mounting base | Rth(j-mb) | 0.4 | K/W | Fig. 5 | 5 | ||
| Forward voltage | VF | 2.8 | 3.3 | V | IF = 75 A; Tj = 25 °C; Fig. 6 | 6 | |
| Reverse current | IR | 250 | μA | VR = 1200 V; Tj = 25 °C | 6 | ||
| Reverse current | IR | 2 | mA | VR = 1200 V; Tj = 150 °C | 6 | ||
| Reverse recovery time | trr | 85 | ns | IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 | 6 | ||
| Non-repetitive avalanche energy | EAS | 50 | mJ | IR = 1.6 A; Tj(init) = 25 °C; L = 40 mH | 6 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 45 | K/W | in free air | 5 | ||
| Forward voltage | VF | 2.2 | V | IF = 75 A; Tj = 150 °C; Fig. 6 | 6 | ||
| Reverse recovery charge | Qr | 1282 | nC | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 6 | ||
| Reverse recovery charge | Qr | 3729 | nC | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 6 | ||
| Reverse recovery charge | Qr | 4608 | nC | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 6 | ||
| Reverse recovery time | trr | 113 | ns | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 6 | ||
| Reverse recovery time | trr | 232 | ns | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 6 | ||
| Reverse recovery time | trr | 265 | ns | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 6 | ||
| Peak reverse recovery current | IRM | 22.4 | A | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 6 | ||
| Peak reverse recovery current | IRM | 32 | A | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 6 | ||
| Peak reverse recovery current | IRM | 34.6 | A | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 6 |
CAD (KiCad official)
- Symbol:
BYC75W-1200PQ - Footprint:
Package_TO_SOT_THT:TO-247-2_Vertical - 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files:
byc75w-1200pq-etched.step/byc75w-1200pq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);byc75w-1200pq.step/byc75w-1200pq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (11 pp, sha256
08dbdd68a4f0de4e, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BYC75W-1200PQ
**WeEn Semiconductors** · Diodes - General Purpose · TO-247-2
BYC75W-1200PQ from WeEn Semiconductors, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the hyperfast power diode, rated for a repetitive peak reverse voltage VRRM of 1200 V and an average forward current IF(AV) of 75 A at Tmb ≤ 75 °C. |
| 2 | A | passive | Anode of the hyperfast power diode; the mounting base is connected to the cathode, so the heatsink is at cathode potential. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-247-2 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | | | 1200 | V | | 3 |
| Crest working reverse voltage | VRWM | | | 1200 | V | | 3 |
| Reverse voltage DC | VR | | | 1200 | V | | 3 |
| Average forward current | IF(AV) | | | 75 | A | δ = 0.5; square-wave pulse; Tmb ≤ 75 °C; Fig. 1; Fig. 2; Fig. 3 | 3 |
| Repetitive peak forward current | IFRM | | | 150 | A | δ = 0.5; tp = 25 μs; Tmb ≤ 75 °C; square-wave pulse | 3 |
| Non-repetitive peak forward current | IFSM | | | 600 | A | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 | 3 |
| Non-repetitive peak forward current | IFSM | | | 660 | A | tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 3 |
| Storage temperature | Tstg | -65 | | 175 | °C | | 3 |
| Junction temperature | Tj | | | 175 | °C | | 3 |
| Thermal resistance from junction to mounting base | Rth(j-mb) | | | 0.4 | K/W | Fig. 5 | 5 |
| Forward voltage | VF | | 2.8 | 3.3 | V | IF = 75 A; Tj = 25 °C; Fig. 6 | 6 |
| Reverse current | IR | | | 250 | μA | VR = 1200 V; Tj = 25 °C | 6 |
| Reverse current | IR | | | 2 | mA | VR = 1200 V; Tj = 150 °C | 6 |
| Reverse recovery time | trr | | | 85 | ns | IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| Non-repetitive avalanche energy | EAS | 50 | | | mJ | IR = 1.6 A; Tj(init) = 25 °C; L = 40 mH | 6 |
| Thermal resistance from junction to ambient | Rth(j-a) | | 45 | | K/W | in free air | 5 |
| Forward voltage | VF | | 2.2 | | V | IF = 75 A; Tj = 150 °C; Fig. 6 | 6 |
| Reverse recovery charge | Qr | | 1282 | | nC | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| Reverse recovery charge | Qr | | 3729 | | nC | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 6 |
| Reverse recovery charge | Qr | | 4608 | | nC | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 6 |
| Reverse recovery time | trr | | 113 | | ns | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| Reverse recovery time | trr | | 232 | | ns | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 6 |
| Reverse recovery time | trr | | 265 | | ns | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 6 |
| Peak reverse recovery current | IRM | | 22.4 | | A | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 | 6 |
| Peak reverse recovery current | IRM | | 32 | | A | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 | 6 |
| Peak reverse recovery current | IRM | | 34.6 | | A | IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 | 6 |
## CAD (KiCad official)
- Symbol: `BYC75W-1200PQ`
- Footprint: `Package_TO_SOT_THT:TO-247-2_Vertical`
- 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files: `byc75w-1200pq-etched.step` / `byc75w-1200pq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `byc75w-1200pq.step` / `byc75w-1200pq.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WeEn Semiconductors datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896892457791488) (11 pp, sha256 `08dbdd68a4f0de4e`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/byc75w-1200pq-datasheet.pdf)