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BYC75W-1200PQ

Public Made by Adom

by adom

WeEn Semiconductors Diodes - General Purpose, TO-247-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BYC75W-1200PQ

WeEn Semiconductors · Diodes - General Purpose · TO-247-2

BYC75W-1200PQ from WeEn Semiconductors, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the hyperfast power diode, rated for a repetitive peak reverse voltage VRRM of 1200 V and an average forward current IF(AV) of 75 A at Tmb ≤ 75 °C.
2 A passive Anode of the hyperfast power diode; the mounting base is connected to the cathode, so the heatsink is at cathode potential.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-247-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 1200 V 3
Crest working reverse voltage VRWM 1200 V 3
Reverse voltage DC VR 1200 V 3
Average forward current IF(AV) 75 A δ = 0.5; square-wave pulse; Tmb ≤ 75 °C; Fig. 1; Fig. 2; Fig. 3 3
Repetitive peak forward current IFRM 150 A δ = 0.5; tp = 25 μs; Tmb ≤ 75 °C; square-wave pulse 3
Non-repetitive peak forward current IFSM 600 A tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 3
Non-repetitive peak forward current IFSM 660 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 3
Storage temperature Tstg -65 175 °C 3
Junction temperature Tj 175 °C 3
Thermal resistance from junction to mounting base Rth(j-mb) 0.4 K/W Fig. 5 5
Forward voltage VF 2.8 3.3 V IF = 75 A; Tj = 25 °C; Fig. 6 6
Reverse current IR 250 μA VR = 1200 V; Tj = 25 °C 6
Reverse current IR 2 mA VR = 1200 V; Tj = 150 °C 6
Reverse recovery time trr 85 ns IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 7 6
Non-repetitive avalanche energy EAS 50 mJ IR = 1.6 A; Tj(init) = 25 °C; L = 40 mH 6
Thermal resistance from junction to ambient Rth(j-a) 45 K/W in free air 5
Forward voltage VF 2.2 V IF = 75 A; Tj = 150 °C; Fig. 6 6
Reverse recovery charge Qr 1282 nC IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 6
Reverse recovery charge Qr 3729 nC IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 6
Reverse recovery charge Qr 4608 nC IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 6
Reverse recovery time trr 113 ns IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 6
Reverse recovery time trr 232 ns IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 6
Reverse recovery time trr 265 ns IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 6
Peak reverse recovery current IRM 22.4 A IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; Fig. 7 6
Peak reverse recovery current IRM 32 A IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125 °C; Fig. 7 6
Peak reverse recovery current IRM 34.6 A IF = 50 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 150 °C; Fig. 7 6

CAD (KiCad official)

  • Symbol: BYC75W-1200PQ
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2 (KiCad packages3D, STEP)
  • 3D model files: byc75w-1200pq-etched.step / byc75w-1200pq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); byc75w-1200pq.step / byc75w-1200pq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (11 pp, sha256 08dbdd68a4f0de4e, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF