# BYC30W-600PT2Q

**WeEn Semiconductors** · Diodes - General Purpose · TO-247-2

BYC30W-600PT2Q from WeEn Semiconductors, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the diode; the repetitive peak reverse voltage VRRM is 600 V, and the mounting base is connected to this cathode. |
| 2 | A | passive | Anode of the diode; the average forward current IF(AV) is rated at 30 A for Tmb ≤ 117 °C (square-wave, δ = 0.5). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-247-2 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| repetitive peak reverse voltage | VRRM |  |  | 600 | V |  | 3 |
| crest working reverse voltage | VRWM |  |  | 600 | V |  | 3 |
| reverse voltage DC | VR |  |  | 600 | V |  | 3 |
| average forward current | IF(AV) |  |  | 30 | A | δ = 0.5; square-wave pulse; Tmb ≤ 117 °C; Fig. 1; Fig. 2; Fig. 3 | 3 |
| repetitive peak forward current | IFRM |  |  | 60 | A | δ = 0.5; tp = 25 μs; Tmb ≤ 117 °C; square-wave pulse | 3 |
| non-repetitive peak forward current | IFSM |  |  | 270 | A | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 | 3 |
| non-repetitive peak forward current | IFSM |  |  | 295 | A | tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 3 |
| storage temperature | Tstg | -55 |  | 175 | °C |  | 3 |
| junction temperature | Tj |  |  | 175 | °C |  | 3 |
| thermal resistance from junction to mounting base | Rth(j-mb) |  |  | 0.8 | K/W | Fig. 5 | 5 |
| forward voltage | VF |  | 2 | 2.75 | V | IF = 30 A; Tj = 25 °C; Fig. 6 | 6 |
| forward voltage | VF |  | 1.38 | 2 | V | IF = 30 A; Tj = 150 °C; Fig. 6 | 6 |
| reverse current | IR |  |  | 10 | μA | VR = 600 V; Tj = 25 °C | 6 |
| reverse current | IR |  |  | 1 | mA | VR = 600 V; Tj = 150 °C | 6 |
| thermal resistance from junction to ambient free air | Rth(j-a) |  | 40 |  | K/W | in free air | 5 |

## CAD (KiCad official)

- Symbol: `BYC30W-600PT2Q`
- Footprint: `Package_TO_SOT_THT:TO-247-2_Vertical`
- 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files: `byc30w-600pt2q-etched.step` / `byc30w-600pt2q-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `byc30w-600pt2q.step` / `byc30w-600pt2q.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WeEn Semiconductors datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590162844495732736) (10 pp, sha256 `13c0f895bf1113cb`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/byc30w-600pt2q-datasheet.pdf)