component
BVSS138LT1G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BVSS138LT1G-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
BVSS138LT1G-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS), and the gate threshold is 1.25 to 2.5 V (VGS(th) at VDS = VGS, ID = 250 µA). |
| 2 | S | passive | Source of the N-channel MOSFET; the source is the reference for the 60 V drain-source rating and the 250 mA continuous drain current limit at TA = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60 V (VDS) and pulsed drain current is rated 800 mA (IDM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
BVSS138LT1G-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
bvss138lt1g-vb-etched.step/bvss138lt1g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bvss138lt1g-vb.step/bvss138lt1g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
7adade1be294bdaf, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BVSS138LT1G-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
BVSS138LT1G-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS), and the gate threshold is 1.25 to 2.5 V (VGS(th) at VDS = VGS, ID = 250 µA). |
| 2 | S | passive | Source of the N-channel MOSFET; the source is the reference for the 60 V drain-source rating and the 250 mA continuous drain current limit at TA = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60 V (VDS) and pulsed drain current is rated 800 mA (IDM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `BVSS138LT1G-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `bvss138lt1g-vb-etched.step` / `bvss138lt1g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bvss138lt1g-vb.step` / `bvss138lt1g-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602994571618107392) (8 pp, sha256 `7adade1be294bdaf`, retrieved 2026-10-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bvss138lt1g-vb-datasheet.pdf)