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BVSS138LT1G-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BVSS138LT1G-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

BVSS138LT1G-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGS), and the gate threshold is 1.25 to 2.5 V (VGS(th) at VDS = VGS, ID = 250 µA).
2 S passive Source of the N-channel MOSFET; the source is the reference for the 60 V drain-source rating and the 250 mA continuous drain current limit at TA = 25 °C.
3 D passive Drain of the N-channel MOSFET; drain-source voltage is rated 60 V (VDS) and pulsed drain current is rated 800 mA (IDM).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: BVSS138LT1G-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: bvss138lt1g-vb-etched.step / bvss138lt1g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bvss138lt1g-vb.step / bvss138lt1g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 7adade1be294bdaf, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF