component
BUF634AIDR
Public Made by Adomby adom
Texas Instruments Operational Amplifier, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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buf634aidr: specified limits as data (metadata.characteristics, 38 rows from the datasheet)
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BUF634AIDR
Texas Instruments · Operational Amplifier · SOIC-8
BUF634AIDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BW | input | Bandwidth adjustment input; connect to V- pin for wide-bandwidth mode (210 MHz) or leave floating for low-quiescent current mode (35 MHz). |
| 2 | NC | unconnected | No internal connection. |
| 3 | VIN | power_in | Signal input; accepts linear input voltage range of -13 V to +13 V at RL = 1 kΩ. |
| 4 | V- | power_in | Negative power supply; operating range ±2.25 V to ±18 V total supply voltage. |
| 5 | NC | unconnected | No internal connection. |
| 6 | VO | output | Output; delivers up to ±250 mA continuous output current with output voltage swing from 1.6 V to 2.5 V from supplies depending on output current. |
| 7 | V+ | power_in | Positive power supply; operating range ±2.25 V to ±18 V total supply voltage. |
| 8 | NC | unconnected | No internal connection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage VS = (V+) – (V–) | VS | 40 | V | printed as 40 (±20) | 4 | ||
| Input voltage | VIN | -0.5 | 0.5 | V | printed as VS ± 0.5 V | 4 | |
| Operating ambient temperature | TA | -40 | 125 | °C | 4 | ||
| Junction temperature | TJ | 150 | °C | 4 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Supply voltage (recommended) | VS | 2.25 | 15 | 18 | V | printed as ±2.25 / ±15 / ±18 V | 4 |
| Ambient temperature (recommended) | TA | -40 | 25 | 125 | °C | limited by RθJA and TJ,Max for safe operation (footnote 1) | 4 |
| Input offset voltage (Wide-BW mode) | VOS | 36 | 65 | mV | TA = 25℃ | 5 | |
| Input bias current (Wide-BW mode) | IB | 0.25 | 2 | µA | VIN = 0 V | 5 | |
| Gain (Wide-BW mode), RL = 1 kΩ | G | 0.95 | 0.99 | V/V | VO = ±10 V, RL = 1 kΩ | 5 | |
| Gain (Wide-BW mode), RL = 100 Ω | G | 0.93 | 0.95 | V/V | VO = ±10 V, RL = 100 Ω | 5 | |
| Gain (Wide-BW mode), RL = 67 Ω | G | 0.91 | 0.93 | V/V | VO = ±10 V, RL = 67 Ω | 5 | |
| Linear input voltage range (Wide-BW mode) | -13 | 13 | V | RL = 1 kΩ, IB < 10 µA | 5 | ||
| Output headroom to supplies (Wide-BW mode) | 1.6 | 1.8 | V | IO = ±10 mA | 5 | ||
| Output headroom to supplies (Wide-BW mode) | 2 | 2.2 | V | IO = ±100 mA | 5 | ||
| Output headroom to supplies (Wide-BW mode) | 2.2 | 2.5 | V | IO = ±150 mA | 5 | ||
| Short-circuit current (Wide-BW mode) | ISC | 375 | 550 | mA | 5 | ||
| Operating voltage range (Wide-BW mode) | VS | 2.25 | 18 | V | printed as ±2.25 / ±18 V | 5 | |
| Quiescent current (Wide-BW mode) | IQ | 8.5 | 12 | mA | IO = 0 mA | 5 | |
| Power-supply rejection ratio (Wide-BW mode) | PSRR | 64 | 75 | dB | VS = ±2.25 V to ±18 V | 5 | |
| Input offset voltage (Low-IQ mode) | VOS | 36 | 65 | mV | TA = 25℃ | 6 | |
| Input bias current (Low-IQ mode) | IB | 0.03 | 0.25 | µA | VIN = 0 V | 6 | |
| Gain (Low-IQ mode), RL = 1 kΩ | G | 0.95 | 0.99 | V/V | VO = ±10 V, RL = 1 kΩ | 6 | |
| Gain (Low-IQ mode), RL = 100 Ω | G | 0.93 | 0.95 | V/V | VO = ±10 V, RL = 100 Ω | 6 | |
| Gain (Low-IQ mode), RL = 67 Ω | G | 0.91 | 0.93 | V/V | VO = ±10 V, RL = 67 Ω | 6 | |
| Linear input voltage range (Low-IQ mode) | -13 | 13 | V | RL = 1 kΩ, IB < 10 µA | 6 | ||
| Output headroom to supplies (Low-IQ mode) | 1.6 | 1.8 | V | IO = ±10 mA | 6 | ||
| Output headroom to supplies (Low-IQ mode) | 2 | 2.2 | V | IO = ±100 mA | 6 | ||
| Output headroom to supplies (Low-IQ mode) | 2.2 | 2.5 | V | IO = ±150 mA | 6 | ||
| Short-circuit current (Low-IQ mode) | ISC | 350 | 550 | mA | 6 | ||
| Operating voltage range (Low-IQ mode) | VS | 2.25 | 18 | V | printed as ±2.25 / ±18 V | 6 | |
| Quiescent current (Low-IQ mode) | IQ | 1.5 | 2.3 | mA | IO = 0 | 6 | |
| Power-supply rejection ratio (Low-IQ mode) | PSRR | 64 | 80 | dB | VS = ±2.25 V to ±18 V | 6 | |
| Junction-to-ambient thermal resistance (D SOIC) | RθJA | 122.9 | °C/W | D (SOIC) package, 8 pins | 4 | ||
| Junction-to-case (top) thermal resistance (D SOIC) | RθJC(top) | 55.2 | °C/W | D (SOIC) package, 8 pins | 4 | ||
| Junction-to-board thermal resistance (D SOIC) | RθJB | 68.4 | °C/W | D (SOIC) package, 8 pins | 4 | ||
| Junction-to-top characterization parameter (D SOIC) | ΨJT | 12.1 | °C/W | D (SOIC) package, 8 pins | 4 | ||
| Junction-to-board characterization parameter (D SOIC) | ΨJB | 67.2 | °C/W | D (SOIC) package, 8 pins | 4 |
CAD (KiCad official)
- Symbol:
BUF634AIDR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
buf634aidr-etched.step/buf634aidr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);buf634aidr.step/buf634aidr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (47 pp, sha256
556148100a323c7c, retrieved 2026-09-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BUF634AIDR
**Texas Instruments** · Operational Amplifier · SOIC-8
BUF634AIDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BW | input | Bandwidth adjustment input; connect to V- pin for wide-bandwidth mode (210 MHz) or leave floating for low-quiescent current mode (35 MHz). |
| 2 | NC | unconnected | No internal connection. |
| 3 | VIN | power_in | Signal input; accepts linear input voltage range of -13 V to +13 V at RL = 1 kΩ. |
| 4 | V- | power_in | Negative power supply; operating range ±2.25 V to ±18 V total supply voltage. |
| 5 | NC | unconnected | No internal connection. |
| 6 | VO | output | Output; delivers up to ±250 mA continuous output current with output voltage swing from 1.6 V to 2.5 V from supplies depending on output current. |
| 7 | V+ | power_in | Positive power supply; operating range ±2.25 V to ±18 V total supply voltage. |
| 8 | NC | unconnected | No internal connection. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage VS = (V+) – (V–) | VS | | | 40 | V | printed as 40 (±20) | 4 |
| Input voltage | VIN | -0.5 | | 0.5 | V | printed as VS ± 0.5 V | 4 |
| Operating ambient temperature | TA | -40 | | 125 | °C | | 4 |
| Junction temperature | TJ | | | 150 | °C | | 4 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |
| Supply voltage (recommended) | VS | 2.25 | 15 | 18 | V | printed as ±2.25 / ±15 / ±18 V | 4 |
| Ambient temperature (recommended) | TA | -40 | 25 | 125 | °C | limited by RθJA and TJ,Max for safe operation (footnote 1) | 4 |
| Input offset voltage (Wide-BW mode) | VOS | | 36 | 65 | mV | TA = 25℃ | 5 |
| Input bias current (Wide-BW mode) | IB | | 0.25 | 2 | µA | VIN = 0 V | 5 |
| Gain (Wide-BW mode), RL = 1 kΩ | G | | 0.95 | 0.99 | V/V | VO = ±10 V, RL = 1 kΩ | 5 |
| Gain (Wide-BW mode), RL = 100 Ω | G | | 0.93 | 0.95 | V/V | VO = ±10 V, RL = 100 Ω | 5 |
| Gain (Wide-BW mode), RL = 67 Ω | G | | 0.91 | 0.93 | V/V | VO = ±10 V, RL = 67 Ω | 5 |
| Linear input voltage range (Wide-BW mode) | | -13 | | 13 | V | RL = 1 kΩ, IB < 10 µA | 5 |
| Output headroom to supplies (Wide-BW mode) | | | 1.6 | 1.8 | V | IO = ±10 mA | 5 |
| Output headroom to supplies (Wide-BW mode) | | | 2 | 2.2 | V | IO = ±100 mA | 5 |
| Output headroom to supplies (Wide-BW mode) | | | 2.2 | 2.5 | V | IO = ±150 mA | 5 |
| Short-circuit current (Wide-BW mode) | ISC | | 375 | 550 | mA | | 5 |
| Operating voltage range (Wide-BW mode) | VS | 2.25 | | 18 | V | printed as ±2.25 / ±18 V | 5 |
| Quiescent current (Wide-BW mode) | IQ | | 8.5 | 12 | mA | IO = 0 mA | 5 |
| Power-supply rejection ratio (Wide-BW mode) | PSRR | 64 | 75 | | dB | VS = ±2.25 V to ±18 V | 5 |
| Input offset voltage (Low-IQ mode) | VOS | | 36 | 65 | mV | TA = 25℃ | 6 |
| Input bias current (Low-IQ mode) | IB | | 0.03 | 0.25 | µA | VIN = 0 V | 6 |
| Gain (Low-IQ mode), RL = 1 kΩ | G | | 0.95 | 0.99 | V/V | VO = ±10 V, RL = 1 kΩ | 6 |
| Gain (Low-IQ mode), RL = 100 Ω | G | | 0.93 | 0.95 | V/V | VO = ±10 V, RL = 100 Ω | 6 |
| Gain (Low-IQ mode), RL = 67 Ω | G | | 0.91 | 0.93 | V/V | VO = ±10 V, RL = 67 Ω | 6 |
| Linear input voltage range (Low-IQ mode) | | -13 | | 13 | V | RL = 1 kΩ, IB < 10 µA | 6 |
| Output headroom to supplies (Low-IQ mode) | | | 1.6 | 1.8 | V | IO = ±10 mA | 6 |
| Output headroom to supplies (Low-IQ mode) | | | 2 | 2.2 | V | IO = ±100 mA | 6 |
| Output headroom to supplies (Low-IQ mode) | | | 2.2 | 2.5 | V | IO = ±150 mA | 6 |
| Short-circuit current (Low-IQ mode) | ISC | | 350 | 550 | mA | | 6 |
| Operating voltage range (Low-IQ mode) | VS | 2.25 | | 18 | V | printed as ±2.25 / ±18 V | 6 |
| Quiescent current (Low-IQ mode) | IQ | | 1.5 | 2.3 | mA | IO = 0 | 6 |
| Power-supply rejection ratio (Low-IQ mode) | PSRR | 64 | 80 | | dB | VS = ±2.25 V to ±18 V | 6 |
| Junction-to-ambient thermal resistance (D SOIC) | RθJA | | 122.9 | | °C/W | D (SOIC) package, 8 pins | 4 |
| Junction-to-case (top) thermal resistance (D SOIC) | RθJC(top) | | 55.2 | | °C/W | D (SOIC) package, 8 pins | 4 |
| Junction-to-board thermal resistance (D SOIC) | RθJB | | 68.4 | | °C/W | D (SOIC) package, 8 pins | 4 |
| Junction-to-top characterization parameter (D SOIC) | ΨJT | | 12.1 | | °C/W | D (SOIC) package, 8 pins | 4 |
| Junction-to-board characterization parameter (D SOIC) | ΨJB | | 67.2 | | °C/W | D (SOIC) package, 8 pins | 4 |
## CAD (KiCad official)
- Symbol: `BUF634AIDR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `buf634aidr-etched.step` / `buf634aidr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `buf634aidr.step` / `buf634aidr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/buf634a.pdf) (47 pp, sha256 `556148100a323c7c`, retrieved 2026-09-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/buf634aidr-datasheet.pdf)