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BTB26E-800BW
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KTP Thyristors (SCR)/Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BTB26E-800BW
KTP · Thyristors (SCR)/Modules · TO-263
BTB26E-800BW from KTP, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 (T1) of the triac, the reference terminal for gate triggering; the datasheet gives IT(RMS) 24 A and VDRM/VRRM 800 V for the device. |
| 2 | T2 | passive | Main terminal 2 (T2) of the triac, also connected to the tab on the non-insulated BTB version; the datasheet gives VDRM/VRRM 800 V and ITSM 240 A (50 Hz, 20 ms). |
| 3 | G | input | Gate trigger input; the datasheet gives IGT max 50 mA (quadrants I-III), VGT max 1.5 V and IGM 4 A (tp=20 us, Tj=125 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KTP |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state / reverse voltage | VDRM/VRRM | 800 | V | Tj=25℃ | 1 | ||
| RMS on-state current (BTB, Tc=90℃) | IT(RMS) | 24 | A | BTB, Tc=90℃ | 1 | ||
| Non-repetitive surge on-state current | ITSM | 240 | A | F=50HZ t=20ms | 1 | ||
| I2t limit value | I2t | 288 | A2S | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | di/dt | 50 | A/us | Tj=125℃ | 1 | ||
| Peak gate current | IGM | 4 | A | tp=20us Tj=125℃ | 1 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj=125℃ | 1 | ||
| Storage temperature | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature | Tj | -40 | 125 | ℃ | 1 | ||
| Gate trigger current (quadrants I, II, III) | IGT | 50 | mA | VD=12V RL=100Ω | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | VD=12V RL=100Ω | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | Tj=125℃ | 2 | ||
| Holding current | IH | 80 | mA | IT=0.5A | 2 | ||
| Latching current | IL | 80 | mA | IG=1.2IGT | 2 | ||
| Critical rate of rise of off-state voltage | dv/dt | 500 | V/us | VD=2/3VDRM Tj=125℃ | 2 | ||
| Critical rate of rise of commutating voltage | (dv/dt)c | 10 | V/us | Tj=125℃ | 2 | ||
| On-state peak voltage | VTM | 1.55 | V | ITM=50A Tj=25℃ | 3 | ||
| Threshold voltage | VT0 | 0.87 | V | Tj=125℃ | 3 | ||
| Slope resistance | Rd | 14.6 | mΩ | Tj=125℃ | 3 | ||
| Off-state peak current | IDRM | 5 | uA | Tj=25℃ | 3 | ||
| Reverse peak current | IRRM | 1 | mA | Tj=125℃ | 3 | ||
| Junction-to-case thermal resistance (BTB) | Rth(j-c) | 1.25 | ℃/W | BTB | 3 |
CAD (KiCad official)
- Symbol:
BTB26E-800BW - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
btb26e-800bw-etched.step/btb26e-800bw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb26e-800bw.step/btb26e-800bw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KTP datasheet (8 pp, sha256
f10221bc139c19d2, retrieved 2026-10-15, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTB26E-800BW
**KTP** · Thyristors (SCR)/Modules · TO-263
BTB26E-800BW from KTP, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 (T1) of the triac, the reference terminal for gate triggering; the datasheet gives IT(RMS) 24 A and VDRM/VRRM 800 V for the device. |
| 2 | T2 | passive | Main terminal 2 (T2) of the triac, also connected to the tab on the non-insulated BTB version; the datasheet gives VDRM/VRRM 800 V and ITSM 240 A (50 Hz, 20 ms). |
| 3 | G | input | Gate trigger input; the datasheet gives IGT max 50 mA (quadrants I-III), VGT max 1.5 V and IGM 4 A (tp=20 us, Tj=125 °C). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KTP |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state / reverse voltage | VDRM/VRRM | | | 800 | V | Tj=25℃ | 1 |
| RMS on-state current (BTB, Tc=90℃) | IT(RMS) | | | 24 | A | BTB, Tc=90℃ | 1 |
| Non-repetitive surge on-state current | ITSM | | | 240 | A | F=50HZ t=20ms | 1 |
| I2t limit value | I2t | | | 288 | A2S | tp=10ms | 1 |
| Critical rate of rise of on-state current | di/dt | | | 50 | A/us | Tj=125℃ | 1 |
| Peak gate current | IGM | | | 4 | A | tp=20us Tj=125℃ | 1 |
| Average gate power dissipation | PG(AV) | | | 1 | W | Tj=125℃ | 1 |
| Storage temperature | Tstg | -40 | | 150 | ℃ | | 1 |
| Operating junction temperature | Tj | -40 | | 125 | ℃ | | 1 |
| Gate trigger current (quadrants I, II, III) | IGT | | | 50 | mA | VD=12V RL=100Ω | 2 |
| Gate trigger voltage | VGT | | | 1.5 | V | VD=12V RL=100Ω | 2 |
| Gate non-trigger voltage | VGD | 0.2 | | | V | Tj=125℃ | 2 |
| Holding current | IH | | | 80 | mA | IT=0.5A | 2 |
| Latching current | IL | | | 80 | mA | IG=1.2IGT | 2 |
| Critical rate of rise of off-state voltage | dv/dt | 500 | | | V/us | VD=2/3VDRM Tj=125℃ | 2 |
| Critical rate of rise of commutating voltage | (dv/dt)c | 10 | | | V/us | Tj=125℃ | 2 |
| On-state peak voltage | VTM | | | 1.55 | V | ITM=50A Tj=25℃ | 3 |
| Threshold voltage | VT0 | | | 0.87 | V | Tj=125℃ | 3 |
| Slope resistance | Rd | | | 14.6 | mΩ | Tj=125℃ | 3 |
| Off-state peak current | IDRM | | | 5 | uA | Tj=25℃ | 3 |
| Reverse peak current | IRRM | | | 1 | mA | Tj=125℃ | 3 |
| Junction-to-case thermal resistance (BTB) | Rth(j-c) | | | 1.25 | ℃/W | BTB | 3 |
## CAD (KiCad official)
- Symbol: `BTB26E-800BW`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `btb26e-800bw-etched.step` / `btb26e-800bw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `btb26e-800bw.step` / `btb26e-800bw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KTP datasheet](docs/btb26e-800bw-datasheet.pdf) (8 pp, sha256 `f10221bc139c19d2`, retrieved 2026-10-15, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/btb26e-800bw-datasheet.pdf)