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BTB26E-800BW

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KTP Thyristors (SCR)/Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTB26E-800BW

KTP · Thyristors (SCR)/Modules · TO-263

BTB26E-800BW from KTP, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (T1) of the triac, the reference terminal for gate triggering; the datasheet gives IT(RMS) 24 A and VDRM/VRRM 800 V for the device.
2 T2 passive Main terminal 2 (T2) of the triac, also connected to the tab on the non-insulated BTB version; the datasheet gives VDRM/VRRM 800 V and ITSM 240 A (50 Hz, 20 ms).
3 G input Gate trigger input; the datasheet gives IGT max 50 mA (quadrants I-III), VGT max 1.5 V and IGM 4 A (tp=20 us, Tj=125 °C).

Key specifications

Parameter Value
Manufacturer KTP
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state / reverse voltage VDRM/VRRM 800 V Tj=25℃ 1
RMS on-state current (BTB, Tc=90℃) IT(RMS) 24 A BTB, Tc=90℃ 1
Non-repetitive surge on-state current ITSM 240 A F=50HZ t=20ms 1
I2t limit value I2t 288 A2S tp=10ms 1
Critical rate of rise of on-state current di/dt 50 A/us Tj=125℃ 1
Peak gate current IGM 4 A tp=20us Tj=125℃ 1
Average gate power dissipation PG(AV) 1 W Tj=125℃ 1
Storage temperature Tstg -40 150 ℃ 1
Operating junction temperature Tj -40 125 ℃ 1
Gate trigger current (quadrants I, II, III) IGT 50 mA VD=12V RL=100Ω 2
Gate trigger voltage VGT 1.5 V VD=12V RL=100Ω 2
Gate non-trigger voltage VGD 0.2 V Tj=125℃ 2
Holding current IH 80 mA IT=0.5A 2
Latching current IL 80 mA IG=1.2IGT 2
Critical rate of rise of off-state voltage dv/dt 500 V/us VD=2/3VDRM Tj=125℃ 2
Critical rate of rise of commutating voltage (dv/dt)c 10 V/us Tj=125℃ 2
On-state peak voltage VTM 1.55 V ITM=50A Tj=25℃ 3
Threshold voltage VT0 0.87 V Tj=125℃ 3
Slope resistance Rd 14.6 mΩ Tj=125℃ 3
Off-state peak current IDRM 5 uA Tj=25℃ 3
Reverse peak current IRRM 1 mA Tj=125℃ 3
Junction-to-case thermal resistance (BTB) Rth(j-c) 1.25 ℃/W BTB 3

CAD (KiCad official)

  • Symbol: BTB26E-800BW
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: btb26e-800bw-etched.step / btb26e-800bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb26e-800bw.step / btb26e-800bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KTP datasheet (8 pp, sha256 f10221bc139c19d2, retrieved 2026-10-15, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF