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Ray Publish 0.1.0 9de3293 2d ago

BTB16-700BWRG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

BTB16-700BWRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 of the triac, the reference terminal for A2 and gate voltages; the datasheet lists VDRM/VRRM of 600 V and 800 V for the BTB16 series, and this 700 V order code is not in the datasheet tables.
2 A2 passive Main terminal A2 of the triac, also connected to the non-insulated metal tab on the BTB16 TO-220AB; RMS on-state current is 16 A at Tc = 100 °C.
3 G input Gate trigger input; for the BW (Snubberless) version IGT is max 50 mA in quadrants I-II-III at VD = 12 V, RL = 30 Ω, with VGT max 1.3 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive/RMS on-state current (full sine wave), TO-220AB non-insulated IT(RMS) 16 A Tc = 100 °C 2
Non repetitive surge peak on-state current, 50 Hz ITSM 160 A F = 50 Hz tp = 20 ms, Tj initial = 25 °C 2
Non repetitive surge peak on-state current, 60 Hz ITSM 168 A F = 60 Hz tp = 16.7 ms, Tj initial = 25 °C 2
I2t value for fusing I2t 144 A2s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
On-state voltage VT 1.55 V ITM = 22.5 A, tp = 380 µs, Tj = 25 °C 2
Threshold on-state voltage VTO 0.85 V Tj = 125 °C 2
Dynamic resistance RD 25 mΩ Tj = 125 °C 2
Off-state leakage current (repetitive) IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25 °C 2
Off-state leakage current (repetitive) IDRM/IRRM 2 mA VDRM = VRRM, Tj = 125 °C 2
Gate trigger current, quadrants I-II-III (Snubberless 50 mA, BW) IGT 50 mA VD = 12 V, RL = 30 Ω, quadrants I - II - III, Tj = 25 °C 3
Gate trigger voltage VGT 1.3 V All quadrants 3
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C 3
Holding current IH 50 mA IT = 500 mA 3
Latching current, quadrants I-III IL 70 mA IG = 1.2 IGT, quadrants I - III 3
Latching current, quadrant II IL 80 mA IG = 1.2 IGT, quadrant II 3
Critical rate of rise of off-state voltage dV/dt 1000 V/µs VD = 67 % VDRM, gate open, Tj = 125 °C 3
Junction to case (AC), TO-220AB non-insulated Rth(j-c) 1.2 °C/W AC, TO-220AB / D2PAK 3
Junction to ambient, TO-220AB non-insulated Rth(j-a) 60 °C/W TO-220AB / TO-220AB ins 3

CAD (KiCad official)

  • Symbol: BTB16-700BWRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: btb16-700bwrg-etched.step / btb16-700bwrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb16-700bwrg.step / btb16-700bwrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (19 pp, sha256 95a784896477d323, retrieved 2026-11-10, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF