BTB16-700BWRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	A1	passive	Main terminal A1 of the triac, the reference terminal for A2 and gate voltages; the datasheet lists VDRM/VRRM of 600 V and 800 V for the BTB16 series, and this 700 V order code is not in the datasheet tables.
2	A2	passive	Main terminal A2 of the triac, also connected to the non-insulated metal tab on the BTB16 TO-220AB; RMS on-state current is 16 A at Tc = 100 °C.
3	G	input	Gate trigger input; for the BW (Snubberless) version IGT is max 50 mA in quadrants I-II-III at VD = 12 V, RL = 30 Ω, with VGT max 1.3 V.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-220AB
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Repetitive/RMS on-state current (full sine wave), TO-220AB non-insulated	IT(RMS)		16	A	Tc = 100 °C	2
Non repetitive surge peak on-state current, 50 Hz	ITSM		160	A	F = 50 Hz tp = 20 ms, Tj initial = 25 °C	2
Non repetitive surge peak on-state current, 60 Hz	ITSM		168	A	F = 60 Hz tp = 16.7 ms, Tj initial = 25 °C	2
I2t value for fusing	I2t		144	A2s	tp = 10 ms	2
Critical rate of rise of on-state current	dI/dt		50	A/µs	IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C	2
Peak gate current	IGM		4	A	tp = 20 µs, Tj = 125 °C	2
Average gate power dissipation	PG(AV)		1	W	Tj = 125 °C	2
Storage junction temperature range	Tstg	-40	150	°C		2
Operating junction temperature range	Tj	-40	125	°C		2
On-state voltage	VT		1.55	V	ITM = 22.5 A, tp = 380 µs, Tj = 25 °C	2
Threshold on-state voltage	VTO		0.85	V	Tj = 125 °C	2
Dynamic resistance	RD		25	mΩ	Tj = 125 °C	2
Off-state leakage current (repetitive)	IDRM/IRRM		5	µA	VDRM = VRRM, Tj = 25 °C	2
Off-state leakage current (repetitive)	IDRM/IRRM		2	mA	VDRM = VRRM, Tj = 125 °C	2
Gate trigger current, quadrants I-II-III (Snubberless 50 mA, BW)	IGT		50	mA	VD = 12 V, RL = 30 Ω, quadrants I - II - III, Tj = 25 °C	3
Gate trigger voltage	VGT		1.3	V	All quadrants	3
Gate non-trigger voltage	VGD	0.2		V	VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C	3
Holding current	IH		50	mA	IT = 500 mA	3
Latching current, quadrants I-III	IL		70	mA	IG = 1.2 IGT, quadrants I - III	3
Latching current, quadrant II	IL		80	mA	IG = 1.2 IGT, quadrant II	3
Critical rate of rise of off-state voltage	dV/dt	1000		V/µs	VD = 67 % VDRM, gate open, Tj = 125 °C	3
Junction to case (AC), TO-220AB non-insulated	Rth(j-c)		1.2	°C/W	AC, TO-220AB / D2PAK	3
Junction to ambient, TO-220AB non-insulated	Rth(j-a)		60	°C/W	TO-220AB / TO-220AB ins	3

CAD (KiCad official)

Symbol: BTB16-700BWRG
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB (KiCad packages3D, STEP)
3D model files: btb16-700bwrg-etched.step / btb16-700bwrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb16-700bwrg.step / btb16-700bwrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (19 pp, sha256 95a784896477d323, retrieved 2026-11-10, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BTB16-700BWRG

Verified BTB16-700BWRG

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README