component
BTA41-800BW
Public Made by Adomby adom
FUXINSEMI TRIACs, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BTA41-800BW
FUXINSEMI · TRIACs · TO-3P
BTA41-800BW from FUXINSEMI, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1 (cathode-side terminal of the triac), carrying up to 40 A RMS on-state current (IT(RMS)) and the reference terminal for gate triggering. |
| 2 | A2 | passive | Main terminal A2 (anode-side terminal of the triac) which blocks VDRM/VRRM of 800 V for the BTA41-800BW and carries up to 40 A RMS; the insulated package tab is not connected to it. |
| 3 | G | input | Gate trigger input with IGT max 50 mA and VGT max 1.3 V at VD=12 V, RL=33 Ω in quadrants I-II-III, peak gate current IGM 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | TO-3P |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Ⅰ-Ⅱ-Ⅲ | IGT | 50 | mA | VD=12V RL=33Ω, Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Gate trigger voltage, Ⅰ-Ⅱ-Ⅲ | VGT | 1.3 | V | Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Gate non-trigger voltage, Ⅰ-Ⅱ-Ⅲ | VGD | 0.2 | V | VD=VDRM Tj=125℃ RL=3.3KΩ, Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Latching current, Ⅰ-Ⅲ | IL | 80 | mA | IG=1.2IGT, Ⅰ-Ⅲ | 2 | ||
| Latching current, Ⅱ | IL | 100 | mA | IG=1.2IGT, Ⅱ | 2 | ||
| Holding current | IH | 60 | mA | IT=100mA | 2 | ||
| Critical rate of rise of commutation voltage | dV/dt | 1000 | V/μs | VD=2/3VDRM Gate Open Tj=125℃ | 2 | ||
| Forward on voltage | VTM | 1.55 | V | ITM=60A tp=380μs | 2 | ||
| Repetitive peak off-state current | IDRM | 10 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 | ||
| Repetitive peak reverse current | IRRM | 5 | mA | VD=VDRM VR=VRRM Tj=125℃ | 2 | ||
| Repetitive peak off-state voltage | VDRM | 800 | V | 2 | |||
| Repetitive peak reverse voltage | VRRM | 800 | V | 2 | |||
| RMS on-state current | IT(RMS) | 40 | A | 2 | |||
| Non repetitive surge peak on-state current | ITSM | 400 | A | full cycle, F=50Hz | 2 | ||
| I2t value for fusing | I2t | 880 | tp=10ms | 2 | |||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT | 2 | ||
| Peak gate current | IGM | 4 | A | 2 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 2 | |||
| Junction temperature | TJ | -40 | 125 | ℃ | 2 | ||
| Storage temperature | TSTG | -40 | 150 | ℃ | 2 | ||
| Thermal resistance junction to case (AC) | Rth(j-c) | 0.9 | ℃/W | AC | 2 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 50 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
BTA41-800BW - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files:
bta41-800bw-etched.step/bta41-800bw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta41-800bw.step/bta41-800bw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (4 pp, sha256
d0d717834df602b5, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTA41-800BW
**FUXINSEMI** · TRIACs · TO-3P
BTA41-800BW from FUXINSEMI, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1 (cathode-side terminal of the triac), carrying up to 40 A RMS on-state current (IT(RMS)) and the reference terminal for gate triggering. |
| 2 | A2 | passive | Main terminal A2 (anode-side terminal of the triac) which blocks VDRM/VRRM of 800 V for the BTA41-800BW and carries up to 40 A RMS; the insulated package tab is not connected to it. |
| 3 | G | input | Gate trigger input with IGT max 50 mA and VGT max 1.3 V at VD=12 V, RL=33 Ω in quadrants I-II-III, peak gate current IGM 4 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | TO-3P |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Ⅰ-Ⅱ-Ⅲ | IGT | | | 50 | mA | VD=12V RL=33Ω, Ⅰ-Ⅱ-Ⅲ | 2 |
| Gate trigger voltage, Ⅰ-Ⅱ-Ⅲ | VGT | | | 1.3 | V | Ⅰ-Ⅱ-Ⅲ | 2 |
| Gate non-trigger voltage, Ⅰ-Ⅱ-Ⅲ | VGD | 0.2 | | | V | VD=VDRM Tj=125℃ RL=3.3KΩ, Ⅰ-Ⅱ-Ⅲ | 2 |
| Latching current, Ⅰ-Ⅲ | IL | | | 80 | mA | IG=1.2IGT, Ⅰ-Ⅲ | 2 |
| Latching current, Ⅱ | IL | | | 100 | mA | IG=1.2IGT, Ⅱ | 2 |
| Holding current | IH | | | 60 | mA | IT=100mA | 2 |
| Critical rate of rise of commutation voltage | dV/dt | 1000 | | | V/μs | VD=2/3VDRM Gate Open Tj=125℃ | 2 |
| Forward on voltage | VTM | | | 1.55 | V | ITM=60A tp=380μs | 2 |
| Repetitive peak off-state current | IDRM | | | 10 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 |
| Repetitive peak reverse current | IRRM | | | 5 | mA | VD=VDRM VR=VRRM Tj=125℃ | 2 |
| Repetitive peak off-state voltage | VDRM | | | 800 | V | | 2 |
| Repetitive peak reverse voltage | VRRM | | | 800 | V | | 2 |
| RMS on-state current | IT(RMS) | | | 40 | A | | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 400 | A | full cycle, F=50Hz | 2 |
| I2t value for fusing | I2t | | | 880 | | tp=10ms | 2 |
| Critical rate of rise of on-state current | dI/dt | | | 50 | A/μs | IG=2×IGT | 2 |
| Peak gate current | IGM | | | 4 | A | | 2 |
| Average gate power dissipation | PG(AV) | | | 1 | W | | 2 |
| Junction temperature | TJ | -40 | | 125 | ℃ | | 2 |
| Storage temperature | TSTG | -40 | | 150 | ℃ | | 2 |
| Thermal resistance junction to case (AC) | Rth(j-c) | | 0.9 | | ℃/W | AC | 2 |
| Thermal resistance junction to ambient | Rth(j-a) | | 50 | | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `BTA41-800BW`
- Footprint: `Package_TO_SOT_THT:TO-3P-3_Vertical`
- 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files: `bta41-800bw-etched.step` / `bta41-800bw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bta41-800bw.step` / `bta41-800bw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FUXINSEMI datasheet](docs/bta41-800bw-datasheet.pdf) (4 pp, sha256 `d0d717834df602b5`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bta41-800bw-datasheet.pdf)