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BTA41-800BW

FUXINSEMI · TRIACs · TO-3P

BTA41-800BW from FUXINSEMI, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 (cathode-side terminal of the triac), carrying up to 40 A RMS on-state current (IT(RMS)) and the reference terminal for gate triggering.
2 A2 passive Main terminal A2 (anode-side terminal of the triac) which blocks VDRM/VRRM of 800 V for the BTA41-800BW and carries up to 40 A RMS; the insulated package tab is not connected to it.
3 G input Gate trigger input with IGT max 50 mA and VGT max 1.3 V at VD=12 V, RL=33 Ω in quadrants I-II-III, peak gate current IGM 4 A.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-3P
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current, Ⅰ-Ⅱ-Ⅲ IGT 50 mA VD=12V RL=33Ω, Ⅰ-Ⅱ-Ⅲ 2
Gate trigger voltage, Ⅰ-Ⅱ-Ⅲ VGT 1.3 V Ⅰ-Ⅱ-Ⅲ 2
Gate non-trigger voltage, Ⅰ-Ⅱ-Ⅲ VGD 0.2 V VD=VDRM Tj=125℃ RL=3.3KΩ, Ⅰ-Ⅱ-Ⅲ 2
Latching current, Ⅰ-Ⅲ IL 80 mA IG=1.2IGT, Ⅰ-Ⅲ 2
Latching current, Ⅱ IL 100 mA IG=1.2IGT, Ⅱ 2
Holding current IH 60 mA IT=100mA 2
Critical rate of rise of commutation voltage dV/dt 1000 V/μs VD=2/3VDRM Gate Open Tj=125℃ 2
Forward on voltage VTM 1.55 V ITM=60A tp=380μs 2
Repetitive peak off-state current IDRM 10 μA VD=VDRM VR=VRRM Tj=25℃ 2
Repetitive peak reverse current IRRM 5 mA VD=VDRM VR=VRRM Tj=125℃ 2
Repetitive peak off-state voltage VDRM 800 V 2
Repetitive peak reverse voltage VRRM 800 V 2
RMS on-state current IT(RMS) 40 A 2
Non repetitive surge peak on-state current ITSM 400 A full cycle, F=50Hz 2
I2t value for fusing I2t 880 tp=10ms 2
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2×IGT 2
Peak gate current IGM 4 A 2
Average gate power dissipation PG(AV) 1 W 2
Junction temperature TJ -40 125 ℃ 2
Storage temperature TSTG -40 150 ℃ 2
Thermal resistance junction to case (AC) Rth(j-c) 0.9 ℃/W AC 2
Thermal resistance junction to ambient Rth(j-a) 50 ℃/W 2

CAD (KiCad official)

  • Symbol: BTA41-800BW
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: bta41-800bw-etched.step / bta41-800bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta41-800bw.step / bta41-800bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (4 pp, sha256 d0d717834df602b5, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF