component
BTA41-800BRG
Public Made by Adomby adom
STMicroelectronics TRIACs, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BTA41-800BRG
STMicroelectronics · TRIACs · TO-3P
BTA41-800BRG from STMicroelectronics, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1, the reference terminal for gate triggering; the device carries up to 41 A rms on-state current (IT(RMS)) between A2 and A1. |
| 2 | A2 | passive | Main terminal A2 of the TRIAC, rated for 600 and 800 V repetitive peak off-state voltage (VDRM/VRRM); the tab is insulated (rated 2500 V rms). |
| 3 | G | input | Gate trigger input with a triggering gate current IGT of 50 mA max in quadrants I-II-III (100 mA in quadrant IV) and VGT max 1.3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-3P |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| On-state rms current (full sine wave), TOP3 insulated | IT(RMS) | 40 | A | TOP3 Tc = 95 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 400 | A | F = 50 Hz t = 20 ms; Tj initial = 25 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 420 | A | F = 60 Hz t = 16.7 ms; Tj initial = 25 °C | 2 | ||
| I²t value for fusing | I²t | 1000 | A²s | tp = 10 ms | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C | 2 | ||
| Peak gate current | IGM | 8 | A | tp = 20 µs, Tj = 125 °C | 2 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj = 125 °C | 2 | ||
| Storage junction temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -40 | 125 | °C | 2 | ||
| Triggering gate current, quadrants I-II-III | IGT | 50 | mA | VD = 12 V, RL = 33 Ω; Tj = 25 °C | 2 | ||
| Triggering gate current, quadrant IV | IGT | 100 | mA | VD = 12 V, RL = 33 Ω; Tj = 25 °C | 2 | ||
| Gate trigger voltage, all quadrants | VGT | 1.3 | V | 2 | |||
| Gate non-trigger voltage, all quadrants | VGD | 0.2 | V | VD = VDRM, RL = 3.3 kΩ; Tj = 125 °C | 2 | ||
| Holding current | IH | 80 | mA | IT = 500 mA | 2 | ||
| Latching current, quadrants I-III-IV | IL | 70 | mA | IG = 1.2 IGT | 2 | ||
| Latching current, quadrant II | IL | 160 | mA | IG = 1.2 IGT | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 500 | V/µs | VD = 67% VDRM, gate open; Tj = 125 °C | 2 | ||
| Critical rate of rise of commutating voltage | (dV/dt)c | 10 | V/µs | (dI/dt)c = 20 A/ms; Tj = 125 °C | 2 | ||
| On-state voltage | VT | 1.55 | V | ITM = 60 A, tp = 380 µs; Tj = 25 °C | 3 | ||
| Threshold voltage | Vt0 | 0.85 | V | Tj = 125 °C | 3 | ||
| Dynamic resistance | Rd | 10 | mΩ | Tj = 125 °C | 3 | ||
| Off-state leakage current | IDRM, IRRM | 5 | µA | VDRM = VRRM; Tj = 25 °C | 3 | ||
| Off-state leakage current | IDRM, IRRM | 5 | mA | VDRM = VRRM; Tj = 125 °C | 3 | ||
| Thermal resistance junction to case (AC), TOP3 insulated | Rth(j-c) | 0.9 | °C/W | Junction to case (AC) | 3 | ||
| Thermal resistance junction to ambient, TOP3 insulated | Rth(j-a) | 50 | °C/W | Junction to ambient | 3 |
CAD (KiCad official)
- Symbol:
BTA41-800BRG - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files:
bta41-800brg-etched.step/bta41-800brg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta41-800brg.step/bta41-800brg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (9 pp, sha256
76e8bdae66209d8a, retrieved 2026-11-12, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTA41-800BRG
**STMicroelectronics** · TRIACs · TO-3P
BTA41-800BRG from STMicroelectronics, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1, the reference terminal for gate triggering; the device carries up to 41 A rms on-state current (IT(RMS)) between A2 and A1. |
| 2 | A2 | passive | Main terminal A2 of the TRIAC, rated for 600 and 800 V repetitive peak off-state voltage (VDRM/VRRM); the tab is insulated (rated 2500 V rms). |
| 3 | G | input | Gate trigger input with a triggering gate current IGT of 50 mA max in quadrants I-II-III (100 mA in quadrant IV) and VGT max 1.3 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-3P |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| On-state rms current (full sine wave), TOP3 insulated | IT(RMS) | | | 40 | A | TOP3 Tc = 95 °C | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 400 | A | F = 50 Hz t = 20 ms; Tj initial = 25 °C | 2 |
| Non repetitive surge peak on-state current | ITSM | | | 420 | A | F = 60 Hz t = 16.7 ms; Tj initial = 25 °C | 2 |
| I²t value for fusing | I²t | | | 1000 | A²s | tp = 10 ms | 2 |
| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C | 2 |
| Peak gate current | IGM | | | 8 | A | tp = 20 µs, Tj = 125 °C | 2 |
| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |
| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |
| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |
| Triggering gate current, quadrants I-II-III | IGT | | | 50 | mA | VD = 12 V, RL = 33 Ω; Tj = 25 °C | 2 |
| Triggering gate current, quadrant IV | IGT | | | 100 | mA | VD = 12 V, RL = 33 Ω; Tj = 25 °C | 2 |
| Gate trigger voltage, all quadrants | VGT | | | 1.3 | V | | 2 |
| Gate non-trigger voltage, all quadrants | VGD | 0.2 | | | V | VD = VDRM, RL = 3.3 kΩ; Tj = 125 °C | 2 |
| Holding current | IH | | | 80 | mA | IT = 500 mA | 2 |
| Latching current, quadrants I-III-IV | IL | | | 70 | mA | IG = 1.2 IGT | 2 |
| Latching current, quadrant II | IL | | | 160 | mA | IG = 1.2 IGT | 2 |
| Critical rate of rise of off-state voltage | dV/dt | 500 | | | V/µs | VD = 67% VDRM, gate open; Tj = 125 °C | 2 |
| Critical rate of rise of commutating voltage | (dV/dt)c | 10 | | | V/µs | (dI/dt)c = 20 A/ms; Tj = 125 °C | 2 |
| On-state voltage | VT | | | 1.55 | V | ITM = 60 A, tp = 380 µs; Tj = 25 °C | 3 |
| Threshold voltage | Vt0 | | | 0.85 | V | Tj = 125 °C | 3 |
| Dynamic resistance | Rd | | | 10 | mΩ | Tj = 125 °C | 3 |
| Off-state leakage current | IDRM, IRRM | | | 5 | µA | VDRM = VRRM; Tj = 25 °C | 3 |
| Off-state leakage current | IDRM, IRRM | | | 5 | mA | VDRM = VRRM; Tj = 125 °C | 3 |
| Thermal resistance junction to case (AC), TOP3 insulated | Rth(j-c) | | | 0.9 | °C/W | Junction to case (AC) | 3 |
| Thermal resistance junction to ambient, TOP3 insulated | Rth(j-a) | | | 50 | °C/W | Junction to ambient | 3 |
## CAD (KiCad official)
- Symbol: `BTA41-800BRG`
- Footprint: `Package_TO_SOT_THT:TO-3P-3_Vertical`
- 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files: `bta41-800brg-etched.step` / `bta41-800brg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bta41-800brg.step` / `bta41-800brg.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/bta41-800brg.pdf) (9 pp, sha256 `76e8bdae66209d8a`, retrieved 2026-11-12, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bta41-800brg-datasheet.pdf)