BTA41-800BRG from STMicroelectronics, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	A1	passive	Main terminal A1, the reference terminal for gate triggering; the device carries up to 41 A rms on-state current (IT(RMS)) between A2 and A1.
2	A2	passive	Main terminal A2 of the TRIAC, rated for 600 and 800 V repetitive peak off-state voltage (VDRM/VRRM); the tab is insulated (rated 2500 V rms).
3	G	input	Gate trigger input with a triggering gate current IGT of 50 mA max in quadrants I-II-III (100 mA in quadrant IV) and VGT max 1.3 V.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-3P
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
On-state rms current (full sine wave), TOP3 insulated	IT(RMS)		40	A	TOP3 Tc = 95 °C	2
Non repetitive surge peak on-state current	ITSM		400	A	F = 50 Hz t = 20 ms; Tj initial = 25 °C	2
Non repetitive surge peak on-state current	ITSM		420	A	F = 60 Hz t = 16.7 ms; Tj initial = 25 °C	2
I²t value for fusing	I²t		1000	A²s	tp = 10 ms	2
Critical rate of rise of on-state current	dI/dt		50	A/µs	IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125 °C	2
Peak gate current	IGM		8	A	tp = 20 µs, Tj = 125 °C	2
Average gate power dissipation	PG(AV)		1	W	Tj = 125 °C	2
Storage junction temperature range	Tstg	-40	150	°C		2
Operating junction temperature range	Tj	-40	125	°C		2
Triggering gate current, quadrants I-II-III	IGT		50	mA	VD = 12 V, RL = 33 Ω; Tj = 25 °C	2
Triggering gate current, quadrant IV	IGT		100	mA	VD = 12 V, RL = 33 Ω; Tj = 25 °C	2
Gate trigger voltage, all quadrants	VGT		1.3	V		2
Gate non-trigger voltage, all quadrants	VGD	0.2		V	VD = VDRM, RL = 3.3 kΩ; Tj = 125 °C	2
Holding current	IH		80	mA	IT = 500 mA	2
Latching current, quadrants I-III-IV	IL		70	mA	IG = 1.2 IGT	2
Latching current, quadrant II	IL		160	mA	IG = 1.2 IGT	2
Critical rate of rise of off-state voltage	dV/dt	500		V/µs	VD = 67% VDRM, gate open; Tj = 125 °C	2
Critical rate of rise of commutating voltage	(dV/dt)c	10		V/µs	(dI/dt)c = 20 A/ms; Tj = 125 °C	2
On-state voltage	VT		1.55	V	ITM = 60 A, tp = 380 µs; Tj = 25 °C	3
Threshold voltage	Vt0		0.85	V	Tj = 125 °C	3
Dynamic resistance	Rd		10	mΩ	Tj = 125 °C	3
Off-state leakage current	IDRM, IRRM		5	µA	VDRM = VRRM; Tj = 25 °C	3
Off-state leakage current	IDRM, IRRM		5	mA	VDRM = VRRM; Tj = 125 °C	3
Thermal resistance junction to case (AC), TOP3 insulated	Rth(j-c)		0.9	°C/W	Junction to case (AC)	3
Thermal resistance junction to ambient, TOP3 insulated	Rth(j-a)		50	°C/W	Junction to ambient	3

CAD (KiCad official)

Symbol: BTA41-800BRG
Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
3D model: TO-3P (KiCad packages3D, STEP)
3D model files: bta41-800brg-etched.step / bta41-800brg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta41-800brg.step / bta41-800brg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (9 pp, sha256 76e8bdae66209d8a, retrieved 2026-11-12, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BTA41-800BRG

Verified BTA41-800BRG

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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