BTA308Y-800C0TQ

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  "title": "BTA308Y-800C0TQ",
  "brief": "WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "BTA308Y-800C0TQ",
    "manufacturer": "WeEn Semiconductors",
    "package": "TO-220AB",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "Thyristors (SCR)/Modules",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588930220955353089",
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      "lcsc": "C602630",
      "digikey": "BTA308Y-800C0TQ-ND",
      "mouser": "771-BTA308Y-800C0TQ"
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      {
        "number": "1",
        "name": "T1",
        "type": "passive",
        "description": "Main terminal 1 of the triac, with the repetitive peak off-state voltage limited to 800 V (VDRM) and RMS on-state current limited to 8 A (IT(RMS))."
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      {
        "number": "2",
        "name": "T2",
        "type": "passive",
        "description": "Main terminal 2 of the triac, which is the reference for the three triggering quadrants (T2+ G+, T2+ G-, T2- G-) given in the characteristics."
      },
      {
        "number": "3",
        "name": "G",
        "type": "input",
        "description": "Gate, used only for triggering in three quadrants, with IGT of 5 to 35 mA at VD = 12 V, IT = 0.1 A, Tj = 25 °C, and limited to 2 A peak gate current (IGM) and 5 W peak gate power (PGM)."
      }
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      "Package": "TO-220AB",
      "Category": "Transistors/Thyristors",
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          "name": "VGT gate trigger voltage",
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          "max": 1,
          "conditions": "VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11",
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          "name": "VGT gate trigger voltage",
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          "conditions": "VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11",
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          "min": 2000,
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          "conditions": "VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit",
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          "name": "rate of rise of off-state voltage",
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          "conditions": "VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit",
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          "name": "rate of change of commutating current",
          "symbol": "dIcom/dt",
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          "conditions": "VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition; Fig. 12",
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          "name": "repetitive peak off-state voltage",
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          "name": "RMS on-state current",
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          "conditions": "full sine wave; Tmb ≤ 121 °C; Fig. 1; Fig. 2; Fig. 3",
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          "name": "non-repetitive peak on-state current",
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          "conditions": "full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5",
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          "name": "non-repetitive peak on-state current",
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          "name": "I2t for fusing",
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          "conditions": "tp = 10 ms; sine wave",
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        {
          "name": "rate of rise of on-state current",
          "symbol": "dIT/dt",
          "kind": "absolute_maximum",
          "unit": "A/μs",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "IG = 70 mA",
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        {
          "name": "peak gate current",
          "symbol": "IGM",
          "kind": "absolute_maximum",
          "unit": "A",
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          "max": 2,
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        {
          "name": "peak gate power",
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          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
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          "max": 5,
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        {
          "name": "average gate power",
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          "unit": "W",
          "min": null,
          "typ": null,
          "max": 0.5,
          "conditions": "over any 20 ms period",
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        {
          "name": "storage temperature",
          "symbol": "Tstg",
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          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 150,
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          "name": "junction temperature",
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          "min": null,
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        {
          "name": "thermal resistance from junction to mounting base",
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          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
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          "conditions": "Fig. 6",
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        {
          "name": "thermal resistance from junction to ambient free air",
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        {
          "name": "RMS isolation voltage",
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          "min": null,
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          "conditions": "50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free",
          "source_page": 5,
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        {
          "name": "isolation capacitance from cathode to external heatsink",
          "symbol": "Cisol",
          "kind": "electrical",
          "unit": "PF",
          "min": null,
          "typ": 10,
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