main
Ray Publish 0.1.1 f6ab001 1d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "bta201-800er",
  "title": "BTA201-800ER",
  "brief": "WeEn Semiconductors TRIACs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.1",
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  "component": {
    "mpn": "BTA201-800ER",
    "manufacturer": "WeEn Semiconductors",
    "package": "TO-92",
    "pin_count": 3,
    "category": "Transistors",
    "subcategory": "TRIACs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/0592204de5a8e560072e63eeb5aacfe0.pdf",
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      "lbr": "bta201-800er.lbr"
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      "lcsc": "C602968"
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
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    },
    "pins": [
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        "number": "1",
        "name": "T1",
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        "description": "Main terminal 1 of the triac, rated for the 800 V repetitive peak off-state voltage (VDRM) and 1 A RMS on-state current (IT(RMS)) given in the limiting values."
      },
      {
        "number": "2",
        "name": "G",
        "type": "input",
        "description": "Gate terminal used to trigger the triac, with peak gate current IGM limited to 2 A, peak gate power PGM to 5 W and average gate power PG(AV) to 0.1 W over any 20 ms period."
      },
      {
        "number": "3",
        "name": "T2",
        "type": "passive",
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        "guard_notes": [
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        "at": "2026-11-05T10:31:55"
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  "metadata": {
    "specs": {
      "Manufacturer": "WeEn Semiconductors",
      "Package": "TO-92",
      "Category": "Transistors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "352b1e64b4f3f0cc550a83abd595928c2fe1b805760bab4ca419d05c5310bdf1",
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          "name": "Repetitive peak off-state voltage",
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          "min": null,
          "typ": null,
          "max": 800,
          "conditions": "",
          "source_page": 3,
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          "name": "RMS on-state current",
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          "conditions": "full sine wave; Tlead ≤ 54 °C; Fig. 1; Fig. 2; Fig. 3",
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          "max": 13.7,
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        {
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          "symbol": "ITSM",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 12.5,
          "conditions": "full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5",
          "source_page": 3,
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        {
          "name": "I2t for fusing",
          "symbol": "I2t",
          "kind": "absolute_maximum",
          "unit": "A²s",
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          "conditions": "tp = 10 ms; SIN",
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          "symbol": "dIT/dt",
          "kind": "absolute_maximum",
          "unit": "A/µs",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "IG = 0.2 A",
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        {
          "name": "Peak gate current",
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          "max": 2,
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        {
          "name": "Peak gate power",
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          "max": 5,
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          "name": "Average gate power",
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          "max": 0.1,
          "conditions": "over any 20 ms period",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Junction temperature",
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          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -40,
          "typ": null,
          "max": 125,
          "conditions": "",
          "source_page": 3,
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        },
        {
          "name": "Thermal resistance junction to lead",
          "symbol": "Rth(j-lead)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "full cycle; Fig. 6",
          "source_page": 6,
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        },
        {
          "name": "Thermal resistance junction to lead",
          "symbol": "Rth(j-lead)",
          "kind": "thermal",
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          "min": null,
          "typ": null,
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          "conditions": "half cycle; Fig. 6",
          "source_page": 6,
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        },
        {
          "name": "Gate trigger current (T2+ G+)",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
          "min": 1,
          "typ": null,
          "max": 10,
          "conditions": "VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7",
          "source_page": 7,
          "source": "datasheet"
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        {
          "name": "Gate trigger current (T2+ G-)",
          "symbol": "IGT",
          "kind": "electrical",
          "unit": "mA",
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          "typ": null,
          "max": 10,
          "conditions": "VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7",
          "source_page": 7,
          "source": "datasheet"
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        {
          "name": "Gate trigger current (T2- G-)",
          "symbol": "IGT",
          "kind": "electrical",
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          "min": 1,
          "typ": null,
          "max": 10,
          "conditions": "VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Latching current (T2+ G+)",
          "symbol": "IL",
          "kind": "electrical",
          "unit": "mA",
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          "typ": null,
          "max": 12,
          "conditions": "VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8",
          "source_page": 7,
          "source": "datasheet"
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        {
          "name": "Latching current (T2+ G-)",
          "symbol": "IL",
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          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8",
          "source_page": 7,
          "source": "datasheet"
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        {
          "name": "Latching current (T2- G-)",
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          "conditions": "VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8",
          "source_page": 7,
          "source": "datasheet"
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        {
          "name": "Holding current",
          "symbol": "IH",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 12,
          "conditions": "VD = 12 V; Tj = 25 °C; Fig. 9",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "On-state voltage",
          "symbol": "VT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.2,
          "max": 1.5,
          "conditions": "IT = 1.4 A; Tj = 25 °C; Fig. 10",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.7,
          "max": 1,
          "conditions": "VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Gate trigger voltage at high temperature",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": 0.2,
          "typ": 0.3,
          "max": null,
          "conditions": "VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Off-state current",
          "symbol": "ID",
          "kind": "electrical",
          "unit": "mA",
          "min": null,
          "typ": 0.1,
          "max": 0.5,
          "conditions": "VD = 800 V; Tj = 125 °C",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Rate of rise of off-state voltage",
          "symbol": "dVD/dt",
          "kind": "electrical",
          "unit": "V/µs",
          "min": 600,
          "typ": null,
          "max": null,
          "conditions": "VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Rate of change of commutating current",
          "symbol": "dIcom/dt",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 2.5,
          "typ": null,
          "max": null,
          "conditions": "VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Rate of change of commutating current",
          "symbol": "dIcom/dt",
          "kind": "electrical",
          "unit": "A/ms",
          "min": 3.5,
          "typ": null,
          "max": null,
          "conditions": "VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 10 V/µs; gate open circuit",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance junction to ambient (free air)",
          "symbol": "Rth(j-a)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": 150,
          "max": null,
          "conditions": "",
          "source_page": 6,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
    "name": "Ray"
  },
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  "description": "WeEn Semiconductors TRIACs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "org": "adom"
}