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BTA201-800ER

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WeEn Semiconductors TRIACs, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsbta201-800erfactory-2.0.0extractor-text

Verified BTA201-800ER

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BTA201-800ER · TO-92 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 13-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-92_Inline
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1f71b1io/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bta201-800er.kicad_sym✓ bta201-800er.kicad_mod✓ bta201-800er.step
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BTA201-800ER

WeEn Semiconductors · TRIACs · TO-92

BTA201-800ER from WeEn Semiconductors, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 of the triac, rated for the 800 V repetitive peak off-state voltage (VDRM) and 1 A RMS on-state current (IT(RMS)) given in the limiting values.
2 G input Gate terminal used to trigger the triac, with peak gate current IGM limited to 2 A, peak gate power PGM to 5 W and average gate power PG(AV) to 0.1 W over any 20 ms period.
3 T2 passive Main terminal 2 of the triac, the terminal referenced in the gate trigger quadrants (T2+ and T2-) of the characteristics table, rated with the same 800 V VDRM and 1 A IT(RMS) limits.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 800 V 3
RMS on-state current IT(RMS) 1 A full sine wave; Tlead ≤ 54 °C; Fig. 1; Fig. 2; Fig. 3 3
Non-repetitive peak on-state current ITSM 13.7 A full sine wave; Tj(init) = 25 °C; tp = 16.8 ms 3
Non-repetitive peak on-state current ITSM 12.5 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 3
I2t for fusing I2t 0.78 A²s tp = 10 ms; SIN 3
Rate of rise of on-state current dIT/dt 100 A/µs IG = 0.2 A 3
Peak gate current IGM 2 A 3
Peak gate power PGM 5 W 3
Average gate power PG(AV) 0.1 W over any 20 ms period 3
Junction temperature Tj -40 125 °C 3
Thermal resistance junction to lead Rth(j-lead) 60 K/W full cycle; Fig. 6 6
Thermal resistance junction to lead Rth(j-lead) 80 K/W half cycle; Fig. 6 6
Gate trigger current (T2+ G+) IGT 1 10 mA VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 7
Gate trigger current (T2+ G-) IGT 1 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 7
Gate trigger current (T2- G-) IGT 1 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 7
Latching current (T2+ G+) IL 12 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 7
Latching current (T2+ G-) IL 20 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 7
Latching current (T2- G-) IL 12 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 7
Holding current IH 12 mA VD = 12 V; Tj = 25 °C; Fig. 9 7
On-state voltage VT 1.2 1.5 V IT = 1.4 A; Tj = 25 °C; Fig. 10 7
Gate trigger voltage VGT 0.7 1 V VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 7
Gate trigger voltage at high temperature VGT 0.2 0.3 V VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 7
Off-state current ID 0.1 0.5 mA VD = 800 V; Tj = 125 °C 7
Rate of rise of off-state voltage dVD/dt 600 V/µs VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 7
Rate of change of commutating current dIcom/dt 2.5 A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit 7
Rate of change of commutating current dIcom/dt 3.5 A/ms VD = 400 V; Tj = 125 °C; IT(RMS) = 1 A; dVcom/dt = 10 V/µs; gate open circuit 7
Thermal resistance junction to ambient (free air) Rth(j-a) 150 K/W 6

CAD (KiCad official)

  • Symbol: BTA201-800ER
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: bta201-800er-etched.step / bta201-800er-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta201-800er.step / bta201-800er.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (13 pp, sha256 352b1e64b4f3f0cc, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF