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BTA10-800CW

WEIDA · Thyristors (SCR)/Modules · TO-220

BTA10-800CW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac, the current-path terminal on the gate side, with the device rated for 10 A RMS on-state current.
2 T2 passive Main terminal T2 of the triac, with 800 V VDRM/VRRM for the BTA10-800CW and 2500 VRMS insulation from all terminals to the heatsink on the insulated BTA10 package.
3 G input Gate trigger input; the CW version has IGT max 35 mA (VD=12V, RL=33Ω) and VGT max 1.5 V.

Key specifications

Parameter Value
Manufacturer WEIDA
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current (Quadrants I-II-III) IGT 35 mA VD=12V, RL=33Ω; Ⅰ-Ⅱ-Ⅲ; CW variant 2
Gate trigger voltage VGT 1.5 V 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ; Ⅰ-Ⅱ-Ⅲ 2
Holding current IH 40 mA IT=100mA; CW variant 2
Latching current (Quadrants I and III) IL 50 mA IG=1.2IGT; Ⅰ-Ⅲ; CW variant 2
Latching current (Quadrant II) IL 70 mA IG=1.2IGT; Ⅱ; CW variant 2
Critical rate of rise of off-state voltage dV/dt 500 V/µs VD=2/3VDRM, Tj=125℃, gate open; CW variant 2
On-state voltage VTM 1.5 V ITM=14A, tp=380μs, Tj=25℃ 3
Repetitive peak off-state / reverse current at 25℃ IDRM/IRRM 5 µA VDRM=VRRM, Tj=25℃ 3
Repetitive peak off-state / reverse current at 125℃ IDRM/IRRM 1 mA VDRM=VRRM, Tj=125℃ 3
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage (800 V variant) VDRM 800 V Tj=25℃ 1
Repetitive peak reverse voltage (800 V variant) VRRM 800 V Tj=25℃ 1
RMS on-state current IT(RMS) 10 A 1
Non repetitive surge peak on-state current ITSM 100 A full cycle, F=50Hz 1
I2t value for fusing I2t 55 A2s tp=10ms 1
Critical rate of rise of on-state current dI/dt 50 A/µs IG=2×IGT 1
Peak gate current IGM 4 A 1
Average gate power dissipation PG(AV) 1 W 1
Peak gate power PGM 5 W 1
Thermal resistance junction to case (insulated TO-220A) Rth(j-c) 2.5 ℃/W junction to case (AC); TO-220A(Ins) 3
Thermal resistance junction to case (insulated TO-220F) Rth(j-c) 2.7 ℃/W junction to case (AC); TO-220F(Ins) 3

CAD (KiCad official)

  • Symbol: BTA10-800CW
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: bta10-800cw-etched.step / bta10-800cw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta10-800cw.step / bta10-800cw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (7 pp, sha256 bc78b4730d429642, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF