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BTA10-800CW
Public Made by Adomby adom
WEIDA Thyristors (SCR)/Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBTA10-800CW
WEIDA · Thyristors (SCR)/Modules · TO-220
BTA10-800CW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac, the current-path terminal on the gate side, with the device rated for 10 A RMS on-state current. |
| 2 | T2 | passive | Main terminal T2 of the triac, with 800 V VDRM/VRRM for the BTA10-800CW and 2500 VRMS insulation from all terminals to the heatsink on the insulated BTA10 package. |
| 3 | G | input | Gate trigger input; the CW version has IGT max 35 mA (VD=12V, RL=33Ω) and VGT max 1.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current (Quadrants I-II-III) | IGT | 35 | mA | VD=12V, RL=33Ω; Ⅰ-Ⅱ-Ⅲ; CW variant | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ; Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Holding current | IH | 40 | mA | IT=100mA; CW variant | 2 | ||
| Latching current (Quadrants I and III) | IL | 50 | mA | IG=1.2IGT; Ⅰ-Ⅲ; CW variant | 2 | ||
| Latching current (Quadrant II) | IL | 70 | mA | IG=1.2IGT; Ⅱ; CW variant | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 500 | V/µs | VD=2/3VDRM, Tj=125℃, gate open; CW variant | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=14A, tp=380μs, Tj=25℃ | 3 | ||
| Repetitive peak off-state / reverse current at 25℃ | IDRM/IRRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak off-state / reverse current at 125℃ | IDRM/IRRM | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage (800 V variant) | VDRM | 800 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage (800 V variant) | VRRM | 800 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 10 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 100 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 55 | A2s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG=2×IGT | 1 | ||
| Peak gate current | IGM | 4 | A | 1 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 1 | |||
| Peak gate power | PGM | 5 | W | 1 | |||
| Thermal resistance junction to case (insulated TO-220A) | Rth(j-c) | 2.5 | ℃/W | junction to case (AC); TO-220A(Ins) | 3 | ||
| Thermal resistance junction to case (insulated TO-220F) | Rth(j-c) | 2.7 | ℃/W | junction to case (AC); TO-220F(Ins) | 3 |
CAD (KiCad official)
- Symbol:
BTA10-800CW - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
bta10-800cw-etched.step/bta10-800cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta10-800cw.step/bta10-800cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (7 pp, sha256
bc78b4730d429642, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).