# BTA10-800BW

**WEIDA** · TRIACs · TO-220

BTA10-800BW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 (pin 1), the reference terminal for gate triggering; with T2 it carries the 10 A RMS on-state current, and the insulated package isolates it from the heatsink at 2500 VRMS. |
| 2 | T2 | passive | Main terminal T2 (pin 2), which with T1 blocks 800 V (VDRM/VRRM) in the off state and carries up to 10 A RMS in the on state, with IGT max 50 mA for the BW grade. |
| 3 | G | input | Gate trigger terminal (pin 3) with IGT max 50 mA and VGT max 1.5 V for the BW grade at VD=12 V, RL=33 ohm, and peak gate current limited to 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Q I-II-III (BW sensitivity) | IGT |  |  | 50 | mA | VD=12V, RL=33Ω | 2 |
| Gate non-trigger voltage | VGD | 0.2 |  |  | V | VD=VDRM, Tj=125℃, RL=3.3kΩ | 2 |
| Holding current (BW) | IH |  |  | 60 | mA | IT=100mA | 2 |
| Latching current, Q I and III (BW) | IL |  |  | 70 | mA | IG=1.2IGT, Ⅰ-Ⅲ | 2 |
| Latching current, Q II (BW) | IL |  |  | 90 | mA | IG=1.2IGT, Ⅱ | 2 |
| Critical rate of rise of off-state voltage (BW) | dV/dt | 1000 |  |  | V/µs | VD=2/3VDRM, Tj=125℃, gate open | 2 |
| On-state voltage | VTM |  |  | 1.5 | V | ITM=14A, tp=380μs, Tj=25℃ | 3 |
| Repetitive peak off-state / reverse current | IDRM/IRRM |  |  | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 |
| Repetitive peak off-state / reverse current | IDRM/IRRM |  |  | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 |
| Storage junction temperature range | Tstg | -40 |  | 150 | ℃ |  | 1 |
| Operating junction temperature range | Tj | -40 |  | 125 | ℃ |  | 1 |
| Repetitive peak off-state voltage (800V variant) | VDRM |  |  | 800 | V | Tj=25℃ | 1 |
| Repetitive peak reverse voltage (800V variant) | VRRM |  |  | 800 | V | Tj=25℃ | 1 |
| RMS on-state current | IT(RMS) |  |  | 10 | A |  | 1 |
| Non repetitive surge peak on-state current | ITSM |  |  | 100 | A | full cycle, F=50Hz | 1 |
| I2t value for fusing | I2t |  |  | 55 | A2s | tp=10ms | 1 |
| Critical rate of rise of on-state current | dI/dt |  |  | 50 | A/μs | IG=2×IGT | 1 |
| Peak gate current | IGM |  |  | 4 | A |  | 1 |
| Average gate power dissipation | PG(AV) |  |  | 1 | W |  | 1 |
| Peak gate power | PGM |  |  | 5 | W |  | 1 |
| Thermal resistance junction to case (AC), insulated TO-220A | Rth(j-c) |  |  | 2.5 | ℃/W | junction to case (AC), TO-220A(Ins) | 3 |
| Thermal resistance junction to case (AC), insulated TO-220F | Rth(j-c) |  |  | 2.7 | ℃/W | junction to case (AC), TO-220F(Ins) | 3 |

## CAD (KiCad official)

- Symbol: `BTA10-800BW`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `bta10-800bw-etched.step` / `bta10-800bw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bta10-800bw.step` / `bta10-800bw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WEIDA datasheet](docs/bta10-800bw-datasheet.pdf) (7 pp, sha256 `bc78b4730d429642`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bta10-800bw-datasheet.pdf)