component
BTA10-800BW
Public Made by Adomby adom
WEIDA TRIACs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| bta10-800bw-etched.step | 2h ago |
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BTA10-800BW
WEIDA · TRIACs · TO-220
BTA10-800BW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 (pin 1), the reference terminal for gate triggering; with T2 it carries the 10 A RMS on-state current, and the insulated package isolates it from the heatsink at 2500 VRMS. |
| 2 | T2 | passive | Main terminal T2 (pin 2), which with T1 blocks 800 V (VDRM/VRRM) in the off state and carries up to 10 A RMS in the on state, with IGT max 50 mA for the BW grade. |
| 3 | G | input | Gate trigger terminal (pin 3) with IGT max 50 mA and VGT max 1.5 V for the BW grade at VD=12 V, RL=33 ohm, and peak gate current limited to 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Q I-II-III (BW sensitivity) | IGT | 50 | mA | VD=12V, RL=33Ω | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ | 2 | ||
| Holding current (BW) | IH | 60 | mA | IT=100mA | 2 | ||
| Latching current, Q I and III (BW) | IL | 70 | mA | IG=1.2IGT, Ⅰ-Ⅲ | 2 | ||
| Latching current, Q II (BW) | IL | 90 | mA | IG=1.2IGT, Ⅱ | 2 | ||
| Critical rate of rise of off-state voltage (BW) | dV/dt | 1000 | V/µs | VD=2/3VDRM, Tj=125℃, gate open | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=14A, tp=380μs, Tj=25℃ | 3 | ||
| Repetitive peak off-state / reverse current | IDRM/IRRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak off-state / reverse current | IDRM/IRRM | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage (800V variant) | VDRM | 800 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage (800V variant) | VRRM | 800 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 10 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 100 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 55 | A2s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT | 1 | ||
| Peak gate current | IGM | 4 | A | 1 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 1 | |||
| Peak gate power | PGM | 5 | W | 1 | |||
| Thermal resistance junction to case (AC), insulated TO-220A | Rth(j-c) | 2.5 | ℃/W | junction to case (AC), TO-220A(Ins) | 3 | ||
| Thermal resistance junction to case (AC), insulated TO-220F | Rth(j-c) | 2.7 | ℃/W | junction to case (AC), TO-220F(Ins) | 3 |
CAD (KiCad official)
- Symbol:
BTA10-800BW - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
bta10-800bw-etched.step/bta10-800bw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta10-800bw.step/bta10-800bw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (7 pp, sha256
bc78b4730d429642, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).