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BTA06-600TWRG
Public Made by Adomby adom
STMicroelectronics TRIACs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BTA06-600TWRG
STMicroelectronics · TRIACs · TO-220AB-3
BTA06-600TWRG from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1, the reference terminal for gate and A2 polarity; the datasheet specifies all characteristics for both polarities of A2 referenced to A1. |
| 2 | A2 | passive | Main terminal A2 which carries the on-state current (IT(RMS) 6 A, VDRM/VRRM 600 V for this part) and is also connected to the metal tab, which is insulated (2500 VRMS) on the BTA06. |
| 3 | G | input | Gate trigger input; the TW version needs IGT max 5 mA (Q1-Q3) at VD = 12 V, with VGT max 1.3 V and peak gate current IGM 4 A (tp = 20 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current | IGT | 5 | mA | VD = 12 V RL = 30 Ω, Quadrant I-II-III, Tj = 25°C | 2 | ||
| Gate trigger voltage | VGT | 1.3 | V | VD = 12 V RL = 30 Ω, Quadrant I-II-III | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD = VDRM RL = 3.3 kΩ Tj = 125°C, Quadrant I-II-III | 2 | ||
| Holding current | IH | 10 | mA | IT = 100 mA | 2 | ||
| Latching current, quadrants I-III | IL | 10 | mA | IG = 1.2 IGT, Quadrant I - III | 2 | ||
| Latching current, quadrant II | IL | 15 | mA | IG = 1.2 IGT, Quadrant II | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 20 | V/µs | VD = 67 %VDRM gate open Tj = 125°C | 2 | ||
| Critical rate of commutating current | (dI/dt)c | 2.7 | A/ms | (dV/dt)c = 0.1 V/µs Tj = 125°C | 2 | ||
| Critical rate of commutating current | (dI/dt)c | 1.2 | A/ms | (dV/dt)c = 10 V/µs Tj = 125°C | 2 | ||
| On-state voltage | VTM | 1.55 | V | ITM = 8.5 A tp = 380 µs Tj = 25°C | 2 | ||
| Threshold voltage | Vt0 | 0.85 | V | Tj = 125°C | 2 | ||
| Dynamic resistance | Rd | 60 | mΩ | Tj = 125°C | 2 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 5 | µA | VDRM = VRRM, Tj = 25°C | 2 | ||
| Off-state/reverse leakage current | IDRM/IRRM | 1 | mA | VDRM = VRRM, Tj = 125°C | 2 | ||
| RMS on-state current | IT(RMS) | 6 | A | Full sine wave, TO-220AB Ins. Tc = 105°C | 1 | ||
| Non repetitive surge peak on-state current | ITSM | 60 | A | Full cycle, Tj initial = 25°C, F = 50 Hz t = 20 ms | 1 | ||
| Non repetitive surge peak on-state current | ITSM | 63 | A | Full cycle, Tj initial = 25°C, F = 60 Hz t = 16.7 ms | 1 | ||
| I²t value for fusing | I²t | 21 | A²s | tp = 10 ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125°C | 1 | ||
| Peak gate current | IGM | 4 | A | tp = 20 µs, Tj = 125°C | 1 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj = 125°C | 1 | ||
| Storage junction temperature range | Tstg | -40 | 150 | °C | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | °C | 1 | ||
| Junction to case thermal resistance (AC) | Rth(j-c) | 2.7 | °C/W | TO-220AB Insulated | 3 | ||
| Junction to ambient thermal resistance | Rth(j-a) | 60 | °C/W | TO-220AB / TO-220AB Insulated | 3 |
CAD (KiCad official)
- Symbol:
BTA06-600TWRG - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
bta06-600twrg-etched.step/bta06-600twrg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bta06-600twrg.step/bta06-600twrg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (7 pp, sha256
b25b831364bc4c08, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTA06-600TWRG
**STMicroelectronics** · TRIACs · TO-220AB-3
BTA06-600TWRG from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Main terminal A1, the reference terminal for gate and A2 polarity; the datasheet specifies all characteristics for both polarities of A2 referenced to A1. |
| 2 | A2 | passive | Main terminal A2 which carries the on-state current (IT(RMS) 6 A, VDRM/VRRM 600 V for this part) and is also connected to the metal tab, which is insulated (2500 VRMS) on the BTA06. |
| 3 | G | input | Gate trigger input; the TW version needs IGT max 5 mA (Q1-Q3) at VD = 12 V, with VGT max 1.3 V and peak gate current IGM 4 A (tp = 20 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220AB-3 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current | IGT | | | 5 | mA | VD = 12 V RL = 30 Ω, Quadrant I-II-III, Tj = 25°C | 2 |
| Gate trigger voltage | VGT | | | 1.3 | V | VD = 12 V RL = 30 Ω, Quadrant I-II-III | 2 |
| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM RL = 3.3 kΩ Tj = 125°C, Quadrant I-II-III | 2 |
| Holding current | IH | | | 10 | mA | IT = 100 mA | 2 |
| Latching current, quadrants I-III | IL | | | 10 | mA | IG = 1.2 IGT, Quadrant I - III | 2 |
| Latching current, quadrant II | IL | | | 15 | mA | IG = 1.2 IGT, Quadrant II | 2 |
| Critical rate of rise of off-state voltage | dV/dt | 20 | | | V/µs | VD = 67 %VDRM gate open Tj = 125°C | 2 |
| Critical rate of commutating current | (dI/dt)c | 2.7 | | | A/ms | (dV/dt)c = 0.1 V/µs Tj = 125°C | 2 |
| Critical rate of commutating current | (dI/dt)c | 1.2 | | | A/ms | (dV/dt)c = 10 V/µs Tj = 125°C | 2 |
| On-state voltage | VTM | | | 1.55 | V | ITM = 8.5 A tp = 380 µs Tj = 25°C | 2 |
| Threshold voltage | Vt0 | | | 0.85 | V | Tj = 125°C | 2 |
| Dynamic resistance | Rd | | | 60 | mΩ | Tj = 125°C | 2 |
| Off-state/reverse leakage current | IDRM/IRRM | | | 5 | µA | VDRM = VRRM, Tj = 25°C | 2 |
| Off-state/reverse leakage current | IDRM/IRRM | | | 1 | mA | VDRM = VRRM, Tj = 125°C | 2 |
| RMS on-state current | IT(RMS) | | | 6 | A | Full sine wave, TO-220AB Ins. Tc = 105°C | 1 |
| Non repetitive surge peak on-state current | ITSM | | | 60 | A | Full cycle, Tj initial = 25°C, F = 50 Hz t = 20 ms | 1 |
| Non repetitive surge peak on-state current | ITSM | | | 63 | A | Full cycle, Tj initial = 25°C, F = 60 Hz t = 16.7 ms | 1 |
| I²t value for fusing | I²t | | | 21 | A²s | tp = 10 ms | 1 |
| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125°C | 1 |
| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125°C | 1 |
| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125°C | 1 |
| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 1 |
| Operating junction temperature range | Tj | -40 | | 125 | °C | | 1 |
| Junction to case thermal resistance (AC) | Rth(j-c) | | | 2.7 | °C/W | TO-220AB Insulated | 3 |
| Junction to ambient thermal resistance | Rth(j-a) | | | 60 | °C/W | TO-220AB / TO-220AB Insulated | 3 |
## CAD (KiCad official)
- Symbol: `BTA06-600TWRG`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files: `bta06-600twrg-etched.step` / `bta06-600twrg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bta06-600twrg.step` / `bta06-600twrg.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](docs/bta06-600twrg-datasheet.pdf) (7 pp, sha256 `b25b831364bc4c08`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bta06-600twrg-datasheet.pdf)