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BTA06-600TWRG

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STMicroelectronics TRIACs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTA06-600TWRG

STMicroelectronics · TRIACs · TO-220AB-3

BTA06-600TWRG from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1, the reference terminal for gate and A2 polarity; the datasheet specifies all characteristics for both polarities of A2 referenced to A1.
2 A2 passive Main terminal A2 which carries the on-state current (IT(RMS) 6 A, VDRM/VRRM 600 V for this part) and is also connected to the metal tab, which is insulated (2500 VRMS) on the BTA06.
3 G input Gate trigger input; the TW version needs IGT max 5 mA (Q1-Q3) at VD = 12 V, with VGT max 1.3 V and peak gate current IGM 4 A (tp = 20 µs).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 5 mA VD = 12 V RL = 30 Ω, Quadrant I-II-III, Tj = 25°C 2
Gate trigger voltage VGT 1.3 V VD = 12 V RL = 30 Ω, Quadrant I-II-III 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM RL = 3.3 kΩ Tj = 125°C, Quadrant I-II-III 2
Holding current IH 10 mA IT = 100 mA 2
Latching current, quadrants I-III IL 10 mA IG = 1.2 IGT, Quadrant I - III 2
Latching current, quadrant II IL 15 mA IG = 1.2 IGT, Quadrant II 2
Critical rate of rise of off-state voltage dV/dt 20 V/µs VD = 67 %VDRM gate open Tj = 125°C 2
Critical rate of commutating current (dI/dt)c 2.7 A/ms (dV/dt)c = 0.1 V/µs Tj = 125°C 2
Critical rate of commutating current (dI/dt)c 1.2 A/ms (dV/dt)c = 10 V/µs Tj = 125°C 2
On-state voltage VTM 1.55 V ITM = 8.5 A tp = 380 µs Tj = 25°C 2
Threshold voltage Vt0 0.85 V Tj = 125°C 2
Dynamic resistance Rd 60 mΩ Tj = 125°C 2
Off-state/reverse leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25°C 2
Off-state/reverse leakage current IDRM/IRRM 1 mA VDRM = VRRM, Tj = 125°C 2
RMS on-state current IT(RMS) 6 A Full sine wave, TO-220AB Ins. Tc = 105°C 1
Non repetitive surge peak on-state current ITSM 60 A Full cycle, Tj initial = 25°C, F = 50 Hz t = 20 ms 1
Non repetitive surge peak on-state current ITSM 63 A Full cycle, Tj initial = 25°C, F = 60 Hz t = 16.7 ms 1
I²t value for fusing I²t 21 A²s tp = 10 ms 1
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125°C 1
Peak gate current IGM 4 A tp = 20 µs, Tj = 125°C 1
Average gate power dissipation PG(AV) 1 W Tj = 125°C 1
Storage junction temperature range Tstg -40 150 °C 1
Operating junction temperature range Tj -40 125 °C 1
Junction to case thermal resistance (AC) Rth(j-c) 2.7 °C/W TO-220AB Insulated 3
Junction to ambient thermal resistance Rth(j-a) 60 °C/W TO-220AB / TO-220AB Insulated 3

CAD (KiCad official)

  • Symbol: BTA06-600TWRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: bta06-600twrg-etched.step / bta06-600twrg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta06-600twrg.step / bta06-600twrg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (7 pp, sha256 b25b831364bc4c08, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF