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BTA06-600CRG

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STMicroelectronics Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTA06-600CRG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

BTA06-600CRG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 bidirectional Anode 1 terminal rated for 6 A RMS at maximum voltage VDRM/VRRM of 600 V; conducts bidirectional current when triggered by gate signal.
2 A2 bidirectional Anode 2 terminal rated for 6 A RMS at maximum voltage VDRM/VRRM of 600 V; conducts bidirectional current when triggered by gate signal.
3 G input Gate trigger terminal; maximum trigger current of 25 mA at 12 V with 30 Ω load required to initiate conduction between A1 and A2.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current, quadrants I-II-III IGT 25 mA VD = 12 V, RL = 30 Ω, quadrants I-II-III, Tj = 25°C (C sensitivity column) 2
Gate trigger current, quadrant IV IGT 50 mA VD = 12 V, RL = 30 Ω, quadrant IV (C sensitivity column) 2
Gate trigger voltage, all quadrants VGT 1.3 V VD = 12 V, RL = 30 Ω 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 kΩ, Tj = 125°C 2
Holding current IH 25 mA IT = 500 mA 2
Latching current, quadrants I-III-IV IL 40 mA IG = 1.2 IGT, quadrants I-III-IV 2
Latching current, quadrant II IL 80 mA IG = 1.2 IGT, quadrant II 2
Critical rate of rise of off-state voltage dV/dt 200 V/µs VD = 67 %VDRM, gate open, Tj = 125°C 2
Critical rate of decrease of main current (dV/dt)c 5 V/µs (dI/dt)c = 2.7 A/ms, Tj = 125°C 2
On-state voltage VTM 1.55 V ITM = 8.5 A, tp = 380 µs, Tj = 25°C 2
Threshold voltage Vt0 0.85 V Tj = 125°C 2
Dynamic resistance Rd 60 mΩ Tj = 125°C 2
Off-state leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25°C 2
Off-state leakage current IDRM/IRRM 1 mA VDRM = VRRM, Tj = 125°C 2
Repetitive peak off-state voltage VDRM/VRRM 600 V Features table value for the 600 V variant 1
RMS on-state current (insulated TO-220AB) IT(RMS) 6 A Full sine wave, TO-220AB Ins., Tc = 105°C 1
Non repetitive surge peak on-state current ITSM 60 A F = 50 Hz, t = 20 ms, full cycle, Tj initial = 25°C 1
Non repetitive surge peak on-state current ITSM 63 A F = 60 Hz, t = 16.7 ms, full cycle, Tj initial = 25°C 1
I2t value for fusing I²t 21 A²s tp = 10 ms 1
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 120 Hz, Tj = 125°C 1
Peak gate current IGM 4 A tp = 20 µs, Tj = 125°C 1
Average gate power dissipation PG(AV) 1 W Tj = 125°C 1
Storage junction temperature range Tstg -40 150 °C 1
Operating junction temperature range Tj -40 125 °C 1
Junction to case (AC), insulated Rth(j-c) 2.7 °C/W TO-220AB Insulated 3
Junction to ambient, insulated Rth(j-a) 60 °C/W TO-220AB Insulated 3

CAD (KiCad official)

  • Symbol: BTA06-600CRG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bta06-600crg-etched.step / bta06-600crg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bta06-600crg.step / bta06-600crg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (7 pp, sha256 b25b831364bc4c08, retrieved 2026-09-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF