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BT152-800R

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WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT152-800R

WeEn Semiconductors · Thyristors (SCR)/Modules · TO-220AB

BT152-800R from WeEn Semiconductors, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 cathode passive Cathode terminal of the thyristor, the main-current return path; the datasheet gives no pin-specific electrical limits beyond the device ratings (IT(AV) 13 A, IT(RMS) 20 A, VDRM 800 V for the -800R).
2 anode passive Anode terminal of the thyristor, the main-current path; the datasheet gives no pin-specific electrical limits beyond the device ratings (IT(AV) 13 A, IT(RMS) 20 A, VDRM 800 V for the -800R).
3 gate input Gate trigger input; peak gate current is limited to 5 A, peak gate voltage to 5 V, and peak gate power to 20 W, with average gate power limited to 0.5 W over any 20 ms period.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 800 V 3
Average on-state current IT(AV) 13 A half sine wave; Tmb ≤ 103 ˚C 3
RMS on-state current IT(RMS) 20 A all conduction angles 3
Non-repetitive peak on-state current ITSM 200 A half sine wave; Tj = 25 ˚C prior to surge; t = 10 ms 3
Non-repetitive peak on-state current ITSM 220 A half sine wave; Tj = 25 ˚C prior to surge; t = 8.3 ms 3
I2t for fusing I2t 200 A2s t = 10 ms 3
Repetitive rate of rise of on-state current after triggering dIT/dt 200 A/μs ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/μs 3
Peak gate current IGM 5 A 3
Peak gate voltage VGM 5 V 3
Peak reverse gate voltage VRGM 5 V 3
Peak gate power PGM 20 W 3
Average gate power PG(AV) 0.5 W over any 20 ms period 3
Storage temperature Tstg -40 150 ˚C 3
Operating junction temperature Tj 125 ˚C 3
Thermal resistance junction to mounting base Rth j-mb 1.1 K/W 4
Gate trigger current IGT 3 32 mA VD = 12 V; IT = 0.1 A 4
Latching current IL 25 80 mA VD = 12 V; IGT = 0.1 A 4
Holding current IH 15 60 mA VD = 12 V; IGT = 0.1 A 4
On-state voltage VT 1.4 1.75 V IT = 40 A 4
Gate trigger voltage VGT 0.6 1.5 V VD = 12 V; IT = 0.1 A 4
Gate trigger voltage VGT 0.25 0.4 V VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 4
Off-state leakage current ID, IR 0.2 1 mA VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 4
Critical rate of rise of off-state voltage dVD/dt 200 300 V/μs VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit 4
Thermal resistance in free air junction to ambient Rth j-a 60 K/W 4
Gate controlled turn-on time tgt 2 μs VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs; ITM = 40 A 4
Circuit commutated turn-off time tq 70 μs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs; dVD/dt = 50 V/μs; RGK = 100 Ω 4

CAD (KiCad official)

  • Symbol: BT152-800R
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: bt152-800r-etched.step / bt152-800r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt152-800r.step / bt152-800r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (9 pp, sha256 89f837970e8d106c, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF