component
BT152-800R
Public Made by Adomby adom
WeEn Semiconductors Thyristors (SCR)/Modules, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBT152-800R
WeEn Semiconductors · Thyristors (SCR)/Modules · TO-220AB
BT152-800R from WeEn Semiconductors, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | cathode | passive | Cathode terminal of the thyristor, the main-current return path; the datasheet gives no pin-specific electrical limits beyond the device ratings (IT(AV) 13 A, IT(RMS) 20 A, VDRM 800 V for the -800R). |
| 2 | anode | passive | Anode terminal of the thyristor, the main-current path; the datasheet gives no pin-specific electrical limits beyond the device ratings (IT(AV) 13 A, IT(RMS) 20 A, VDRM 800 V for the -800R). |
| 3 | gate | input | Gate trigger input; peak gate current is limited to 5 A, peak gate voltage to 5 V, and peak gate power to 20 W, with average gate power limited to 0.5 W over any 20 ms period. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 800 | V | 3 | |||
| Average on-state current | IT(AV) | 13 | A | half sine wave; Tmb ≤ 103 ˚C | 3 | ||
| RMS on-state current | IT(RMS) | 20 | A | all conduction angles | 3 | ||
| Non-repetitive peak on-state current | ITSM | 200 | A | half sine wave; Tj = 25 ˚C prior to surge; t = 10 ms | 3 | ||
| Non-repetitive peak on-state current | ITSM | 220 | A | half sine wave; Tj = 25 ˚C prior to surge; t = 8.3 ms | 3 | ||
| I2t for fusing | I2t | 200 | A2s | t = 10 ms | 3 | ||
| Repetitive rate of rise of on-state current after triggering | dIT/dt | 200 | A/μs | ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/μs | 3 | ||
| Peak gate current | IGM | 5 | A | 3 | |||
| Peak gate voltage | VGM | 5 | V | 3 | |||
| Peak reverse gate voltage | VRGM | 5 | V | 3 | |||
| Peak gate power | PGM | 20 | W | 3 | |||
| Average gate power | PG(AV) | 0.5 | W | over any 20 ms period | 3 | ||
| Storage temperature | Tstg | -40 | 150 | ˚C | 3 | ||
| Operating junction temperature | Tj | 125 | ˚C | 3 | |||
| Thermal resistance junction to mounting base | Rth j-mb | 1.1 | K/W | 4 | |||
| Gate trigger current | IGT | 3 | 32 | mA | VD = 12 V; IT = 0.1 A | 4 | |
| Latching current | IL | 25 | 80 | mA | VD = 12 V; IGT = 0.1 A | 4 | |
| Holding current | IH | 15 | 60 | mA | VD = 12 V; IGT = 0.1 A | 4 | |
| On-state voltage | VT | 1.4 | 1.75 | V | IT = 40 A | 4 | |
| Gate trigger voltage | VGT | 0.6 | 1.5 | V | VD = 12 V; IT = 0.1 A | 4 | |
| Gate trigger voltage | VGT | 0.25 | 0.4 | V | VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C | 4 | |
| Off-state leakage current | ID, IR | 0.2 | 1 | mA | VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C | 4 | |
| Critical rate of rise of off-state voltage | dVD/dt | 200 | 300 | V/μs | VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit | 4 | |
| Thermal resistance in free air junction to ambient | Rth j-a | 60 | K/W | 4 | |||
| Gate controlled turn-on time | tgt | 2 | μs | VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs; ITM = 40 A | 4 | ||
| Circuit commutated turn-off time | tq | 70 | μs | VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs; dVD/dt = 50 V/μs; RGK = 100 Ω | 4 |
CAD (KiCad official)
- Symbol:
BT152-800R - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
bt152-800r-etched.step/bt152-800r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bt152-800r.step/bt152-800r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (9 pp, sha256
89f837970e8d106c, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).