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BT137X-600D
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WeEn Semiconductors TRIACs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BT137X-600D
WeEn Semiconductors · TRIACs · TO-220F-3
BT137X-600D from WeEn Semiconductors, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac; the gate trigger currents (IGT 2.5 to 6.5 mA typ) are referenced to this terminal. |
| 2 | T2 | passive | Main terminal 2 of the triac, rated for VDRM of 600 V and IT(RMS) of 8 A at Th ≤ 73 °C. |
| 3 | G | input | Gate, a very sensitive gate that triggers in all four quadrants, with IGT max 5 mA (10 mA in T2- G+) at VD = 12 V and peak gate current IGM max 2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220F-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 600 | V | 4 | |||
| RMS on-state current | IT(RMS) | 8 | A | full sine wave; Th ≤ 73 °C | 4 | ||
| Non-repetitive peak on-state current | ITSM | 65 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 4 | ||
| Non-repetitive peak on-state current | ITSM | 71 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 4 | ||
| I2t for fusing | I2t | 21 | A2s | tp = 10 ms; SIN | 4 | ||
| Rate of rise of on-state current | dIT/dt | 50 | A/µs | IG = 10 mA; T2+ G+ | 4 | ||
| Rate of rise of on-state current | dIT/dt | 10 | A/µs | IG = 20 mA; T2- G+ | 4 | ||
| Peak gate current | IGM | 2 | A | 4 | |||
| Peak gate power | PGM | 5 | W | 4 | |||
| Average gate power | PG(AV) | 0.5 | W | over any 20 ms period | 4 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 4 | ||
| Junction temperature | Tj | 125 | °C | 4 | |||
| Thermal resistance junction to heatsink | Rth(j-h) | 6.5 | K/W | full or half cycle; without heatsink compound | 7 | ||
| Thermal resistance junction to heatsink | Rth(j-h) | 4.5 | K/W | full or half cycle; with heatsink compound | 7 | ||
| RMS isolation voltage | Visol(RMS) | 2500 | V | all terminals to external heatsink; sinusoidal; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C | 7 | ||
| Gate trigger current | IGT | 2.5 | 5 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 8 | |
| Gate trigger current | IGT | 3.5 | 5 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 8 | |
| Gate trigger current | IGT | 6.5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C | 8 | |
| Latching current | IL | 1.6 | 15 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C | 8 | |
| Latching current | IL | 8.5 | 20 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C | 8 | |
| Latching current | IL | 1.2 | 15 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C | 8 | |
| Latching current | IL | 2.5 | 20 | mA | VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C | 8 | |
| Holding current | IH | 1.5 | 10 | mA | VD = 12 V; Tj = 25 °C | 8 | |
| On-state voltage | VT | 1.3 | 1.65 | V | IT = 10 A; Tj = 25 °C | 8 | |
| Gate trigger voltage | VGT | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 8 | |
| Gate trigger voltage | VGT | 0.25 | 0.4 | V | VD = 400 V; IT = 0.1 A; Tj = 125 °C | 8 | |
| Off-state current | ID | 0.1 | 0.5 | mA | VD = 600 V; Tj = 125 °C | 8 | |
| Rate of rise of off-state voltage | dVD/dt | 5 | V/µs | VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ; exponential waveform | 8 | ||
| Gate-controlled turn-on time | tgt | 2 | µs | ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/dt = 5 A/µs | 8 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 55 | K/W | in free air | 7 | ||
| Isolation capacitance | Cisol | 10 | pF | from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C | 7 |
CAD (KiCad official)
- Symbol:
BT137X-600D - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (14 pp, sha256
6a6622a4e3300892, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BT137X-600D
**WeEn Semiconductors** · TRIACs · TO-220F-3
BT137X-600D from WeEn Semiconductors, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac; the gate trigger currents (IGT 2.5 to 6.5 mA typ) are referenced to this terminal. |
| 2 | T2 | passive | Main terminal 2 of the triac, rated for VDRM of 600 V and IT(RMS) of 8 A at Th ≤ 73 °C. |
| 3 | G | input | Gate, a very sensitive gate that triggers in all four quadrants, with IGT max 5 mA (10 mA in T2- G+) at VD = 12 V and peak gate current IGM max 2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220F-3 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | | | 600 | V | | 4 |
| RMS on-state current | IT(RMS) | | | 8 | A | full sine wave; Th ≤ 73 °C | 4 |
| Non-repetitive peak on-state current | ITSM | | | 65 | A | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 4 |
| Non-repetitive peak on-state current | ITSM | | | 71 | A | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 4 |
| I2t for fusing | I2t | | | 21 | A2s | tp = 10 ms; SIN | 4 |
| Rate of rise of on-state current | dIT/dt | | | 50 | A/µs | IG = 10 mA; T2+ G+ | 4 |
| Rate of rise of on-state current | dIT/dt | | | 10 | A/µs | IG = 20 mA; T2- G+ | 4 |
| Peak gate current | IGM | | | 2 | A | | 4 |
| Peak gate power | PGM | | | 5 | W | | 4 |
| Average gate power | PG(AV) | | | 0.5 | W | over any 20 ms period | 4 |
| Storage temperature | Tstg | -40 | | 150 | °C | | 4 |
| Junction temperature | Tj | | | 125 | °C | | 4 |
| Thermal resistance junction to heatsink | Rth(j-h) | | | 6.5 | K/W | full or half cycle; without heatsink compound | 7 |
| Thermal resistance junction to heatsink | Rth(j-h) | | | 4.5 | K/W | full or half cycle; with heatsink compound | 7 |
| RMS isolation voltage | Visol(RMS) | | | 2500 | V | all terminals to external heatsink; sinusoidal; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C | 7 |
| Gate trigger current | IGT | | 2.5 | 5 | mA | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 8 |
| Gate trigger current | IGT | | 3.5 | 5 | mA | VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 8 |
| Gate trigger current | IGT | | 6.5 | 10 | mA | VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C | 8 |
| Latching current | IL | | 1.6 | 15 | mA | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C | 8 |
| Latching current | IL | | 8.5 | 20 | mA | VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C | 8 |
| Latching current | IL | | 1.2 | 15 | mA | VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C | 8 |
| Latching current | IL | | 2.5 | 20 | mA | VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C | 8 |
| Holding current | IH | | 1.5 | 10 | mA | VD = 12 V; Tj = 25 °C | 8 |
| On-state voltage | VT | | 1.3 | 1.65 | V | IT = 10 A; Tj = 25 °C | 8 |
| Gate trigger voltage | VGT | | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 8 |
| Gate trigger voltage | VGT | 0.25 | 0.4 | | V | VD = 400 V; IT = 0.1 A; Tj = 125 °C | 8 |
| Off-state current | ID | | 0.1 | 0.5 | mA | VD = 600 V; Tj = 125 °C | 8 |
| Rate of rise of off-state voltage | dVD/dt | | 5 | | V/µs | VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ; exponential waveform | 8 |
| Gate-controlled turn-on time | tgt | | 2 | | µs | ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/dt = 5 A/µs | 8 |
| Thermal resistance junction to ambient | Rth(j-a) | | 55 | | K/W | in free air | 7 |
| Isolation capacitance | Cisol | | 10 | | pF | from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C | 7 |
## CAD (KiCad official)
- Symbol: `BT137X-600D`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WeEn Semiconductors datasheet](docs/bt137x-600d-datasheet.pdf) (14 pp, sha256 `6a6622a4e3300892`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bt137x-600d-datasheet.pdf)