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BT137X-600D

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WeEn Semiconductors TRIACs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BT137X-600D

WeEn Semiconductors · TRIACs · TO-220F-3

BT137X-600D from WeEn Semiconductors, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 of the triac; the gate trigger currents (IGT 2.5 to 6.5 mA typ) are referenced to this terminal.
2 T2 passive Main terminal 2 of the triac, rated for VDRM of 600 V and IT(RMS) of 8 A at Th ≤ 73 °C.
3 G input Gate, a very sensitive gate that triggers in all four quadrants, with IGT max 5 mA (10 mA in T2- G+) at VD = 12 V and peak gate current IGM max 2 A.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-220F-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 600 V 4
RMS on-state current IT(RMS) 8 A full sine wave; Th ≤ 73 °C 4
Non-repetitive peak on-state current ITSM 65 A full sine wave; Tj(init) = 25 °C; tp = 20 ms 4
Non-repetitive peak on-state current ITSM 71 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms 4
I2t for fusing I2t 21 A2s tp = 10 ms; SIN 4
Rate of rise of on-state current dIT/dt 50 A/µs IG = 10 mA; T2+ G+ 4
Rate of rise of on-state current dIT/dt 10 A/µs IG = 20 mA; T2- G+ 4
Peak gate current IGM 2 A 4
Peak gate power PGM 5 W 4
Average gate power PG(AV) 0.5 W over any 20 ms period 4
Storage temperature Tstg -40 150 °C 4
Junction temperature Tj 125 °C 4
Thermal resistance junction to heatsink Rth(j-h) 6.5 K/W full or half cycle; without heatsink compound 7
Thermal resistance junction to heatsink Rth(j-h) 4.5 K/W full or half cycle; with heatsink compound 7
RMS isolation voltage Visol(RMS) 2500 V all terminals to external heatsink; sinusoidal; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C 7
Gate trigger current IGT 2.5 5 mA VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 8
Gate trigger current IGT 3.5 5 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 8
Gate trigger current IGT 6.5 10 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C 8
Latching current IL 1.6 15 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C 8
Latching current IL 8.5 20 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C 8
Latching current IL 1.2 15 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C 8
Latching current IL 2.5 20 mA VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C 8
Holding current IH 1.5 10 mA VD = 12 V; Tj = 25 °C 8
On-state voltage VT 1.3 1.65 V IT = 10 A; Tj = 25 °C 8
Gate trigger voltage VGT 0.7 1 V VD = 12 V; IT = 0.1 A; Tj = 25 °C 8
Gate trigger voltage VGT 0.25 0.4 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 8
Off-state current ID 0.1 0.5 mA VD = 600 V; Tj = 125 °C 8
Rate of rise of off-state voltage dVD/dt 5 V/µs VDM = 402 V; Tj = 125 °C; RGT1 = 1 kΩ; exponential waveform 8
Gate-controlled turn-on time tgt 2 µs ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/dt = 5 A/µs 8
Thermal resistance junction to ambient Rth(j-a) 55 K/W in free air 7
Isolation capacitance Cisol 10 pF from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 °C 7

CAD (KiCad official)

  • Symbol: BT137X-600D
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (14 pp, sha256 6a6622a4e3300892, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF