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BSS84PH6327

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs bss84ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers bss84ph6327: viewers · Ray 1mo ago
bss84ph6327-etched.fit.json bss84ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss84ph6327-etched.glb bss84ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss84ph6327-etched.step bss84ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss84ph6327.glb Publish 0.1.0 · Ray 1mo ago
bss84ph6327.kicad_mod Publish 0.1.0 · Ray 1mo ago
bss84ph6327.kicad_sym Publish 0.1.0 · Ray 1mo ago
bss84ph6327.lbr Publish 0.1.0 · Ray 1mo ago
bss84ph6327.step Publish 0.1.0 · Ray 1mo ago
package.json bss84ph6327: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json bss84ph6327: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 28d ago
README.md bss84ph6327: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 28d ago

BSS84PH6327

Infineon Technologies · MOSFETs · SOT-23

BSS84PH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate electrode (control input) rated for ±20 V gate-source voltage with threshold voltage from -1 to -2 V.
2 Source passive Source terminal of the p-channel MOSFET serving as one of the main current-carrying electrodes.
3 Drain passive Drain terminal rated for maximum continuous current of -0.17 A at 25°C and drain-source breakdown voltage of -60 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -20 20 V 1
Power dissipation Ptot 0.36 W TA=25°C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Continuous drain current ID -0.17 A TA=25°C 1
Continuous drain current ID -0.14 A TA=70°C 1
Pulsed drain current ID puls -0.68 A TA=25°C 1
Avalanche energy, single pulse EAS 2.6 mJ ID=-0.17 A, VDD=-25V, RGS=25 1
Avalanche energy, periodic limited by Tjmax EAR 0.036 mJ 1
Reverse diode dv/dt dv/dt -6 kV/µs IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C 1
Thermal resistance, junction - soldering point (Pin 3) RthJS 200 K/W 2
Thermal resistance, junction - ambient, SMD on PCB RthJA 350 K/W @ min. footprint 2
Thermal resistance, junction - ambient, SMD on PCB RthJA 300 K/W @ 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS -60 V VGS=0, ID=-250µA 2
Gate threshold voltage VGS(th) -1 -1.5 -2 V ID=-20µA, VGS=VDS 2
Zero gate voltage drain current IDSS -0.1 µA VDS=-60V, VGS=0, TA=25°C 2
Zero gate voltage drain current IDSS -100 µA VDS=-60V, VGS=0, TA=125°C 2
Gate-source leakage current IGSS -10 -100 nA VGS=-20V, VDS=0 2
Drain-source on-state resistance RDS(on) 8 12 Ω VGS=-4.5V, ID=-0.14A 2
Drain-source on-state resistance RDS(on) 5.8 8 Ω VGS=-10V, ID=-0.17A 2
Transconductance gfs 0.065 0.13 S VDS 2IDRDS(on)max, ID=-0.14A 3
Input capacitance Ciss 15 19 pF VGS=0, VDS=-25V, f=1MHz 3
Output capacitance Coss 6 8 pF VGS=0, VDS=-25V, f=1MHz 3
Reverse transfer capacitance Crss 2 3 pF VGS=0, VDS=-25V, f=1MHz 3
Turn-on delay time td(on) 6.7 10 ns VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 3
Rise time tr 16.2 24.3 ns VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 3
Turn-off delay time td(off) 8.6 12.9 ns VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 3
Fall time tf 20.5 30.8 ns VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 3
Gate to source charge Qgs 0.25 0.37 nC VDD=-48V, ID=-0.17A 3
Gate to drain charge Qgd 0.3 0.45 nC 3
Gate charge total Qg 1 1.5 nC VDD=-48V, ID=-0.17A, VGS=0 to -10V 3
Inverse diode continuous forward current IS -0.17 A TA=25°C 3
Inverse diode direct current, pulsed ISM -0.68 A 3
Inverse diode forward voltage VSD -0.93 -1.24 V VGS=0, IF=-0.17A 3
Reverse recovery time trr 23 34 ns VR=-30V, IF=lS, diF/dt=100A/µs 3
Reverse recovery charge Qrr 10 15 nC 3
Gate plateau voltage V(plateau) -3.42 V VDD=-48V, ID=-0.17A 3

CAD (KiCad official)

  • Symbol: BSS84PH6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss84ph6327-etched.step / bss84ph6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss84ph6327.step / bss84ph6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 be8cff8ae0379772, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF