component
BSS84PH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownBSS84PH6327
Infineon Technologies · MOSFETs · SOT-23
BSS84PH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate electrode (control input) rated for ±20 V gate-source voltage with threshold voltage from -1 to -2 V. |
| 2 | Source | passive | Source terminal of the p-channel MOSFET serving as one of the main current-carrying electrodes. |
| 3 | Drain | passive | Drain terminal rated for maximum continuous current of -0.17 A at 25°C and drain-source breakdown voltage of -60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.36 | W | TA=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Continuous drain current | ID | -0.17 | A | TA=25°C | 1 | ||
| Continuous drain current | ID | -0.14 | A | TA=70°C | 1 | ||
| Pulsed drain current | ID puls | -0.68 | A | TA=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 2.6 | mJ | ID=-0.17 A, VDD=-25V, RGS=25 | 1 | ||
| Avalanche energy, periodic limited by Tjmax | EAR | 0.036 | mJ | 1 | |||
| Reverse diode dv/dt | dv/dt | -6 | kV/µs | IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C | 1 | ||
| Thermal resistance, junction - soldering point (Pin 3) | RthJS | 200 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD on PCB | RthJA | 350 | K/W | @ min. footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD on PCB | RthJA | 300 | K/W | @ 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS=0, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | ID=-20µA, VGS=VDS | 2 |
| Zero gate voltage drain current | IDSS | -0.1 | µA | VDS=-60V, VGS=0, TA=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | -100 | µA | VDS=-60V, VGS=0, TA=125°C | 2 | ||
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-20V, VDS=0 | 2 | |
| Drain-source on-state resistance | RDS(on) | 8 | 12 | Ω | VGS=-4.5V, ID=-0.14A | 2 | |
| Drain-source on-state resistance | RDS(on) | 5.8 | 8 | Ω | VGS=-10V, ID=-0.17A | 2 | |
| Transconductance | gfs | 0.065 | 0.13 | S | VDS 2IDRDS(on)max, ID=-0.14A | 3 | |
| Input capacitance | Ciss | 15 | 19 | pF | VGS=0, VDS=-25V, f=1MHz | 3 | |
| Output capacitance | Coss | 6 | 8 | pF | VGS=0, VDS=-25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 2 | 3 | pF | VGS=0, VDS=-25V, f=1MHz | 3 | |
| Turn-on delay time | td(on) | 6.7 | 10 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 | |
| Rise time | tr | 16.2 | 24.3 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 | |
| Turn-off delay time | td(off) | 8.6 | 12.9 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 | |
| Fall time | tf | 20.5 | 30.8 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 | |
| Gate to source charge | Qgs | 0.25 | 0.37 | nC | VDD=-48V, ID=-0.17A | 3 | |
| Gate to drain charge | Qgd | 0.3 | 0.45 | nC | 3 | ||
| Gate charge total | Qg | 1 | 1.5 | nC | VDD=-48V, ID=-0.17A, VGS=0 to -10V | 3 | |
| Inverse diode continuous forward current | IS | -0.17 | A | TA=25°C | 3 | ||
| Inverse diode direct current, pulsed | ISM | -0.68 | A | 3 | |||
| Inverse diode forward voltage | VSD | -0.93 | -1.24 | V | VGS=0, IF=-0.17A | 3 | |
| Reverse recovery time | trr | 23 | 34 | ns | VR=-30V, IF=lS, diF/dt=100A/µs | 3 | |
| Reverse recovery charge | Qrr | 10 | 15 | nC | 3 | ||
| Gate plateau voltage | V(plateau) | -3.42 | V | VDD=-48V, ID=-0.17A | 3 |
CAD (KiCad official)
- Symbol:
BSS84PH6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss84ph6327-etched.step/bss84ph6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss84ph6327.step/bss84ph6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
be8cff8ae0379772, retrieved 2026-09-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).