component
BSS84PH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bss84ph6327: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+482
README.md+43@@ -21,6 +21,49 @@ BSS84PH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |+| Power dissipation | Ptot | | | 0.36 | W | TA=25°C | 1 |+| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Continuous drain current | ID | | | -0.17 | A | TA=25°C | 1 |+| Continuous drain current | ID | | | -0.14 | A | TA=70°C | 1 |+| Pulsed drain current | ID puls | | | -0.68 | A | TA=25°C | 1 |+| Avalanche energy, single pulse | EAS | | | 2.6 | mJ | ID=-0.17 A, VDD=-25V, RGS=25 | 1 |+| Avalanche energy, periodic limited by Tjmax | EAR | | | 0.036 | mJ | | 1 |+| Reverse diode dv/dt | dv/dt | | | -6 | kV/µs | IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C | 1 |+| Thermal resistance, junction - soldering point (Pin 3) | RthJS | | | 200 | K/W | | 2 |+| Thermal resistance, junction - ambient, SMD on PCB | RthJA | | | 350 | K/W | @ min. footprint | 2 |+| Thermal resistance, junction - ambient, SMD on PCB | RthJA | | | 300 | K/W | @ 6 cm2 cooling area | 2 |+| Drain-source breakdown voltage | V(BR)DSS | -60 | | | V | VGS=0, ID=-250µA | 2 |+| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | ID=-20µA, VGS=VDS | 2 |+| Zero gate voltage drain current | IDSS | | | -0.1 | µA | VDS=-60V, VGS=0, TA=25°C | 2 |+| Zero gate voltage drain current | IDSS | | | -100 | µA | VDS=-60V, VGS=0, TA=125°C | 2 |+| Gate-source leakage current | IGSS | | -10 | -100 | nA | VGS=-20V, VDS=0 | 2 |+| Drain-source on-state resistance | RDS(on) | | 8 | 12 | Ω | VGS=-4.5V, ID=-0.14A | 2 |+| Drain-source on-state resistance | RDS(on) | | 5.8 | 8 | Ω | VGS=-10V, ID=-0.17A | 2 |+| Transconductance | gfs | 0.065 | 0.13 | | S | VDS 2*ID*RDS(on)max, ID=-0.14A | 3 |+| Input capacitance | Ciss | | 15 | 19 | pF | VGS=0, VDS=-25V, f=1MHz | 3 |+| Output capacitance | Coss | | 6 | 8 | pF | VGS=0, VDS=-25V, f=1MHz | 3 |+| Reverse transfer capacitance | Crss | | 2 | 3 | pF | VGS=0, VDS=-25V, f=1MHz | 3 |+| Turn-on delay time | td(on) | | 6.7 | 10 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 |+| Rise time | tr | | 16.2 | 24.3 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 |+| Turn-off delay time | td(off) | | 8.6 | 12.9 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 |+| Fall time | tf | | 20.5 | 30.8 | ns | VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25 | 3 |+| Gate to source charge | Qgs | | 0.25 | 0.37 | nC | VDD=-48V, ID=-0.17A | 3 |+| Gate to drain charge | Qgd | | 0.3 | 0.45 | nC | | 3 |+| Gate charge total | Qg | | 1 | 1.5 | nC | VDD=-48V, ID=-0.17A, VGS=0 to -10V | 3 |+| Inverse diode continuous forward current | IS | | | -0.17 | A | TA=25°C | 3 |+| Inverse diode direct current, pulsed | ISM | | | -0.68 | A | | 3 |+| Inverse diode forward voltage | VSD | | -0.93 | -1.24 | V | VGS=0, IF=-0.17A | 3 |+| Reverse recovery time | trr | | 23 | 34 | ns | VR=-30V, IF=lS, diF/dt=100A/µs | 3 |+| Reverse recovery charge | Qrr | | 10 | 15 | nC | | 3 |+| Gate plateau voltage | V(plateau) | | -3.42 | | V | VDD=-48V, ID=-0.17A | 3 |+ ## CAD (KiCad official) - Symbol: `BSS84PH6327`
page.json+439@@ -133,6 +133,445 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "be8cff8ae0379772",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.36,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.17,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.14,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID puls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.68,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 2.6,+ "conditions": "ID=-0.17 A, VDD=-25V, RGS=25",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, periodic limited by Tjmax",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 0.036,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Reverse diode dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "kV/µs",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - soldering point (Pin 3)",+ "symbol": "RthJS",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD on PCB",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "@ min. footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD on PCB",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "@ 6 cm2 cooling area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.5,+ "max": -2,+ "conditions": "ID=-20µA, VGS=VDS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -0.1,+ "conditions": "VDS=-60V, VGS=0, TA=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VDS=-60V, VGS=0, TA=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": -10,+ "max": -100,+ "conditions": "VGS=-20V, VDS=0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 8,+ "max": 12,+ "conditions": "VGS=-4.5V, ID=-0.14A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 5.8,+ "max": 8,+ "conditions": "VGS=-10V, ID=-0.17A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 0.065,+ "typ": 0.13,+ "max": null,+ "conditions": "VDS 2*ID*RDS(on)max, ID=-0.14A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 15,+ "max": 19,+ "conditions": "VGS=0, VDS=-25V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 6,+ "max": 8,+ "conditions": "VGS=0, VDS=-25V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2,+ "max": 3,+ "conditions": "VGS=0, VDS=-25V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6.7,+ "max": 10,+ "conditions": "VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16.2,+ "max": 24.3,+ "conditions": "VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8.6,+ "max": 12.9,+ "conditions": "VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20.5,+ "max": 30.8,+ "conditions": "VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.25,+ "max": 0.37,+ "conditions": "VDD=-48V, ID=-0.17A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.3,+ "max": 0.45,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1,+ "max": 1.5,+ "conditions": "VDD=-48V, ID=-0.17A, VGS=0 to -10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Inverse diode continuous forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.17,+ "conditions": "TA=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Inverse diode direct current, pulsed",+ "symbol": "ISM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.68,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Inverse diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.93,+ "max": -1.24,+ "conditions": "VGS=0, IF=-0.17A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 23,+ "max": 34,+ "conditions": "VR=-30V, IF=lS, diF/dt=100A/µs",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10,+ "max": 15,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate plateau voltage",+ "symbol": "V(plateau)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -3.42,+ "max": null,+ "conditions": "VDD=-48V, ID=-0.17A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],