# BSS84PH6327-HXY

**HXY MOSFET** · MOSFETs · SOT-23

BSS84PH6327-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, and the datasheet gives threshold of -0.8 to -2.0 V at ID=-250µA, with 2000V HBM ESD rating. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the body diode anode; drain current is rated -0.13 A continuous. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -50 V and -0.13 A continuous (-0.5 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -50 |  |  | V | VGS=0, ID=250µA | 2 |
| Gate threshold voltage | VGS(th) | -0.8 |  | -2 | V | VDS=VGS, ID=-250µA | 2 |
| Gate-body leakage current | IGSS | -10 |  | 10 | µA | VDS=0, VGS=±10V | 2 |
| Zero gate voltage drain current | IDSS |  |  | -10 | µA | VDS=-50V, VGS=0V | 2 |
| Zero gate voltage drain current | IDSS |  |  | -100 | nA | VDS=-40V, VGS=0V | 2 |
| Drain-source on-resistance | RDS(on) |  | 2 | 5 | Ω | VGS=-10V, ID=-0.13A | 2 |
| Drain-source on-resistance | RDS(on) |  | 2.5 | 6 | Ω | VGS=-4.5V, ID=-0.13A | 2 |
| Diode forward voltage | VSD |  |  | -1 | V | IS=-0.13A, VGS=0V | 2 |
| Drain-source voltage | VDS |  |  | -50 | V | Ta=25℃ unless otherwise noted | 1 |
| Gate-source voltage | VGS | -20 |  | 20 | V | Ta=25℃ unless otherwise noted | 1 |
| Drain current-continuous | ID |  |  | -0.13 | A | Ta=25℃ unless otherwise noted | 1 |
| Pulsed drain current | IDM |  |  | -0.5 | A | Ta=25℃ unless otherwise noted | 1 |
| Maximum power dissipation | PD |  |  | 0.35 | W | Ta=25℃ unless otherwise noted | 1 |
| Operating junction and storage temperature range | TJ,TSTG | -55 |  | 150 | ℃ | Ta=25℃ unless otherwise noted | 1 |
| Forward transconductance | gFS |  | 50 |  | mS | VDS=-25V, ID=-0.13A | 2 |
| Input capacitance | Ciss |  | 25 |  | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
| Output capacitance | Coss |  | 15 |  | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 3.5 |  | pF | VDS=-25V, VGS=0V, f=1MHz | 2 |
| Turn-on delay time | td(on) |  | 16.7 |  | nS | VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω | 2 |
| Rise time | tr |  | 8.6 |  | nS | VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω | 2 |
| Turn-off delay time | td(off) |  | 17.9 |  | nS | VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω | 2 |
| Fall time | tf |  | 5.3 |  | nS | VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω | 2 |
| Thermal resistance, junction-to-ambient (Note 2) | RθJA |  | 62.5 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `BSS84PH6327-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss84ph6327-hxy-etched.step` / `bss84ph6327-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss84ph6327-hxy.step` / `bss84ph6327-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/bss84ph6327-hxy-datasheet.pdf) (5 pp, sha256 `9ecf82872a448531`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss84ph6327-hxy-datasheet.pdf)