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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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BSS84PH6327-HXY

HXY MOSFET · MOSFETs · SOT-23

BSS84PH6327-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, and the datasheet gives threshold of -0.8 to -2.0 V at ID=-250µA, with 2000V HBM ESD rating.
2 S passive Source of the P-channel MOSFET, connected to the body diode anode; drain current is rated -0.13 A continuous.
3 D passive Drain of the P-channel MOSFET, rated for VDS of -50 V and -0.13 A continuous (-0.5 A pulsed).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -50 V VGS=0, ID=250µA 2
Gate threshold voltage VGS(th) -0.8 -2 V VDS=VGS, ID=-250µA 2
Gate-body leakage current IGSS -10 10 µA VDS=0, VGS=±10V 2
Zero gate voltage drain current IDSS -10 µA VDS=-50V, VGS=0V 2
Zero gate voltage drain current IDSS -100 nA VDS=-40V, VGS=0V 2
Drain-source on-resistance RDS(on) 2 5 Ω VGS=-10V, ID=-0.13A 2
Drain-source on-resistance RDS(on) 2.5 6 Ω VGS=-4.5V, ID=-0.13A 2
Diode forward voltage VSD -1 V IS=-0.13A, VGS=0V 2
Drain-source voltage VDS -50 V Ta=25℃ unless otherwise noted 1
Gate-source voltage VGS -20 20 V Ta=25℃ unless otherwise noted 1
Drain current-continuous ID -0.13 A Ta=25℃ unless otherwise noted 1
Pulsed drain current IDM -0.5 A Ta=25℃ unless otherwise noted 1
Maximum power dissipation PD 0.35 W Ta=25℃ unless otherwise noted 1
Operating junction and storage temperature range TJ,TSTG -55 150 ℃ Ta=25℃ unless otherwise noted 1
Forward transconductance gFS 50 mS VDS=-25V, ID=-0.13A 2
Input capacitance Ciss 25 pF VDS=-25V, VGS=0V, f=1MHz 2
Output capacitance Coss 15 pF VDS=-25V, VGS=0V, f=1MHz 2
Reverse transfer capacitance Crss 3.5 pF VDS=-25V, VGS=0V, f=1MHz 2
Turn-on delay time td(on) 16.7 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Rise time tr 8.6 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Turn-off delay time td(off) 17.9 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Fall time tf 5.3 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Thermal resistance, junction-to-ambient (Note 2) RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: BSS84PH6327-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss84ph6327-hxy-etched.step / bss84ph6327-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss84ph6327-hxy.step / bss84ph6327-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 9ecf82872a448531, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF