# BSS84DW

**Shikues** · MOSFETs · SOT-363

BSS84DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the first P-channel MOSFET (Q1), rated for VDSS -60 V and continuous drain current -0.18 A. |
| 2 | G1 | input | Gate of the first P-channel MOSFET (Q1), with gate-source voltage limit of ±20 V and threshold of -1.1 to -2.5 V. |
| 3 | D2 | passive | Drain of the second P-channel MOSFET (Q2), rated for VDSS -60 V and pulsed drain current -0.45 A. |
| 4 | S2 | passive | Source of the second P-channel MOSFET (Q2), rated for VDSS -60 V and continuous drain current -0.18 A. |
| 5 | G2 | input | Gate of the second P-channel MOSFET (Q2), with gate-source voltage limit of ±20 V and threshold of -1.1 to -2.5 V. |
| 6 | D1 | passive | Drain of the first P-channel MOSFET (Q1), rated for VDSS -60 V and pulsed drain current -0.45 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | -60 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -0.18 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | -0.45 | A |  | 1 |
| Diode Continuous Forward Current | IS |  |  | -0.1 | A |  | 1 |
| Maximum Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance Junction to Ambient (SOT23) | RθJA |  |  | 400 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, IDS=-250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=-48V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 30 | µA | TJ=85°C | 2 |
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.8 | -2.5 | V | VDS=VGS, IDS=-250µA | 2 |
| Gate Leakage Current | IGSS | -10 |  | 10 | µA | VGS=±20V, VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 4 | 6 | Ω | VGS=-10V, IDS=-100mA | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 4.5 | 7 | Ω | VGS=-4.5V, IDS=-100mA | 2 |
| Diode Forward Voltage | VSD |  | -0.85 | -1.1 | V | ISD=-100mA, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `BSS84DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bss84dw-etched.step` / `bss84dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss84dw.step` / `bss84dw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757075315736612864) (4 pp, sha256 `5eb82b27c863d727`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss84dw-datasheet.pdf)