component
BSS84DW
Public Made by Adomby adom
Shikues MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| bss84dw-etched.glb | 16d ago |
| bss84dw-etched.step | 16d ago |
| bss84dw-hero.glb | 16d ago |
| bss84dw-hero.overlay.json | 16d ago |
| bss84dw.glb | 16d ago |
| bss84dw.kicad_mod | 16d ago |
| bss84dw.kicad_sym | 16d ago |
| bss84dw.lbr | 16d ago |
| bss84dw.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
BSS84DW
Shikues · MOSFETs · SOT-363
BSS84DW from Shikues, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the first P-channel MOSFET (Q1), rated for VDSS -60 V and continuous drain current -0.18 A. |
| 2 | G1 | input | Gate of the first P-channel MOSFET (Q1), with gate-source voltage limit of ±20 V and threshold of -1.1 to -2.5 V. |
| 3 | D2 | passive | Drain of the second P-channel MOSFET (Q2), rated for VDSS -60 V and pulsed drain current -0.45 A. |
| 4 | S2 | passive | Source of the second P-channel MOSFET (Q2), rated for VDSS -60 V and continuous drain current -0.18 A. |
| 5 | G2 | input | Gate of the second P-channel MOSFET (Q2), with gate-source voltage limit of ±20 V and threshold of -1.1 to -2.5 V. |
| 6 | D1 | passive | Drain of the first P-channel MOSFET (Q1), rated for VDSS -60 V and pulsed drain current -0.45 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -0.18 | A | 1 | |||
| Pulsed Drain Current | IDM | -0.45 | A | 1 | |||
| Diode Continuous Forward Current | IS | -0.1 | A | 1 | |||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient (SOT23) | RθJA | 400 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, IDS=-250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=-48V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | µA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.1 | -1.8 | -2.5 | V | VDS=VGS, IDS=-250µA | 2 |
| Gate Leakage Current | IGSS | -10 | 10 | µA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 4 | 6 | Ω | VGS=-10V, IDS=-100mA | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 4.5 | 7 | Ω | VGS=-4.5V, IDS=-100mA | 2 | |
| Diode Forward Voltage | VSD | -0.85 | -1.1 | V | ISD=-100mA, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
BSS84DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bss84dw-etched.step/bss84dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss84dw.step/bss84dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (4 pp, sha256
5eb82b27c863d727, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).