component
BSS8402DW-7-F
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BSS8402DW-7-F
Diodes Incorporated · MOSFETs · SOT-363
BSS8402DW-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of N-channel Q1 (60V, 115mA, RDS(ON) max 13.5Ω at VGS=10V). |
| 2 | G1 | input | Gate of N-channel Q1, with VGS(TH) of 1.0V to 2.5V and a maximum continuous VGS of ±20V. |
| 3 | D2 | passive | Drain of P-channel Q2 (-50V, -130mA, RDS(ON) max 10Ω at VGS=-5V). |
| 4 | S2 | passive | Source of P-channel Q2. |
| 5 | G2 | input | Gate of P-channel Q2, with VGS(TH) of -0.8V to -2.0V and a maximum VGS of 20V. |
| 6 | D1 | passive | Drain of N-channel Q1, with VDSS of 60V and continuous ID of 115mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Power Dissipation | PD | 200 | mW | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Voltage (N-channel Q1) | VDSS | 60 | V | 2 | |||
| Drain-Gate Voltage (N-channel Q1) | VDGR | 60 | V | RGS 1.0MΩ | 2 | ||
| Gate-Source Voltage Continuous (N-channel Q1) | VGSS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage Pulsed (N-channel Q1) | VGSS | -40 | 40 | V | 2 | ||
| Drain Current Continuous (N-channel Q1) | ID | 115 | mA | 2 | |||
| Drain Current Continuous (N-channel Q1) | ID | 73 | mA | @ +100°C | 2 | ||
| Drain Current Pulsed (N-channel Q1) | ID | 800 | mA | 2 | |||
| Drain-Source Voltage (P-channel Q2) | VDSS | -50 | V | 2 | |||
| Drain-Gate Voltage (P-channel Q2) | VDGR | -50 | V | RGS 20KΩ | 2 | ||
| Gate-Source Voltage Continuous (P-channel Q2) | VGSS | 20 | V | 2 | |||
| Drain Current Continuous (P-channel Q2) | ID | -130 | mA | 2 | |||
| Drain-Source Breakdown Voltage (N-channel Q1) | BVDSS | 60 | 70 | V | VGS = 0V, ID = 10µA | 3 | |
| Zero Gate Voltage Drain Current @ TC = +25°C (N-channel Q1) | IDSS | 1 | µA | TC = +25°C, VDS = 60V, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current @ TC = +125°C (N-channel Q1) | IDSS | 500 | µA | TC = +125°C, VDS = 60V, VGS = 0V | 3 | ||
| Gate-Body Leakage (N-channel Q1) | IGSS | -10 | 10 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage (N-channel Q1) | VGS(TH) | 1 | 2.5 | V | VDS = VGS, ID = 250µA | 3 | |
| Static Drain-Source On-Resistance (N-channel Q1) | RDS(ON) | 13.5 | Ω | VGS = 10V, ID = 0.5A | 3 | ||
| On-State Drain Current (N-channel Q1) | ID(ON) | 0.5 | 1 | A | VGS = 10V, VDS = 7.5V | 3 | |
| Forward Transconductance (N-channel Q1) | gFS | 80 | mS | VDS = 10V, ID = 0.2A | 3 | ||
| Input Capacitance (N-channel Q1) | Ciss | 22 | 50 | pF | 3 | ||
| Output Capacitance (N-channel Q1) | Coss | 11 | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | |
| Reverse Transfer Capacitance (N-channel Q1) | Crss | 2 | 5 | pF | 3 | ||
| Turn-On Delay Time (N-channel Q1) | tD(ON) | 7 | 20 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 | |
| Turn-Off Delay Time (N-channel Q1) | tD(OFF) | 11 | 20 | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω | 3 | |
| Drain-Source Breakdown Voltage (P-channel Q2) | BVDSS | -50 | V | VGS = 0V, ID = -250µA | 3 | ||
| Zero Gate Voltage Drain Current, TJ = +25°C (P-channel Q2) | IDSS | -1 | µA | VDS = -50V, VGS = 0V, TJ = +25°C | 3 | ||
| Zero Gate Voltage Drain Current, TJ = +125°C (P-channel Q2) | IDSS | -2 | µA | VDS = -50V, VGS = 0V, TJ = +125°C | 3 | ||
| Zero Gate Voltage Drain Current (P-channel Q2) | IDSS | -100 | nA | VDS = -25V, VGS = 0V, TJ = +25°C | 3 | ||
| Gate-Body Leakage (P-channel Q2) | IGSS | 10 | nA | VGS = 20V, VDS = 0V | 3 | ||
| Gate Threshold Voltage (P-channel Q2) | VGS(TH) | -0.8 | -2 | V | VDS = VGS, ID = -1mA | 3 | |
| Static Drain-Source On-Resistance (P-channel Q2) | RDS(ON) | 10 | Ω | VGS = -5V, ID = -0.100A | 3 | ||
| Forward Transconductance (P-channel Q2) | gFS | 0.05 | S | VDS = -25V, ID = -0.1A | 3 | ||
| Input Capacitance (P-channel Q2) | Ciss | 45 | pF | 3 | |||
| Output Capacitance (P-channel Q2) | Coss | 25 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance (P-channel Q2) | Crss | 12 | pF | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
BSS8402DW-7-F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bss8402dw-7-f-etched.step/bss8402dw-7-f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss8402dw-7-f.step/bss8402dw-7-f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
c1385d8ef0065ecb, retrieved 2026-11-04, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).