BSS84 P-Channel MOSFET

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  "type": "component",
  "slug": "bss84",
  "title": "BSS84 P-Channel MOSFET",
  "brief": "-50 V P-channel enhancement MOSFET in SOT-23 for high-side switching and level shifting.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "p-channel",
    "small-signal",
    "sot-23",
    "high-side",
    "diodes"
  ],
  "component": {
    "mpn": "BSS84",
    "manufacturer": "Diodes Incorporated",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Discrete Semiconductor",
    "subcategory": "MOSFET",
    "datasheet": "https://www.diodes.com/assets/Datasheets/BSS84.pdf",
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        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Enhancement-mode P-channel control terminal. VGS(TH) between -0.8V and -2.0V; drive to -5V or more negative (up to ±20V max VGSS) to fully enhance the channel."
      },
      {
        "number": "2",
        "name": "S",
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      {
        "number": "3",
        "name": "D",
        "type": "passive",
        "description": "Drain. Switched terminal. -50V max VDSS; -130mA continuous ID, -1.2A pulsed IDM. RDS(ON) typ 3.2Ω / 10Ω max at VGS=-5V, ID=-100mA."
      }
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        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "seat": "z = 0",
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  },
  "metadata": {
    "specs": {
      "Type": "P-channel enhancement MOSFET",
      "Drain-source voltage (VDS)": "-50 V",
      "Continuous drain current (ID)": "-130 mA",
      "On-resistance (RDS(on))": "10 ohm max at VGS = -10 V",
      "Gate threshold voltage": "-0.8 V to -3 V",
      "Power dissipation": "360 mW",
      "Operating temperature": "-55 C to 150 C"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "a4e89efffb9e0283",
      "rows": [
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          "name": "Drain-Source Voltage",
          "symbol": "VDSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
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          "max": -50,
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        {
          "name": "Drain-Gate Voltage",
          "symbol": "VDGR",
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          "conditions": "RGS ≤ 20kΩ",
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        {
          "name": "Gate-Source Voltage Continuous",
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        {
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          "max": -130,
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        },
        {
          "name": "Pulsed Drain Current",
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          "max": -1.2,
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          "name": "Total Power Dissipation",
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        {
          "name": "Thermal Resistance, Junction to Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 417,
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        },
        {
          "name": "Operating and Storage Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "recommended_operating",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": -50,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0, ID = -250µA",
          "source_page": 2,
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        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": -1,
          "conditions": "VDS = -50V, VGS = 0, TJ = +25°C",
          "source_page": 2,
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        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": -2,
          "conditions": "VDS = -50V, VGS = 0, TJ = +125°C",
          "source_page": 2,
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          "name": "Zero Gate Voltage Drain Current",
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          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": -100,
          "conditions": "VDS = -25V, VGS = 0, TJ = +25°C",
          "source_page": 2,
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        },
        {
          "name": "Gate-Body Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VGS = ±20V, VDS = 0",
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        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": -0.8,
          "typ": null,
          "max": -2,
          "conditions": "VDS = VGS, ID = -1mA",
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        },
        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 3.2,
          "max": 10,
          "conditions": "VGS = -5V, ID = -0.100A",
          "source_page": 2,
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        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
          "min": 0.05,
          "typ": null,
          "max": null,
          "conditions": "VDS = -25V, ID = -0.1A",
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        },
        {
          "name": "Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 24.6,
          "max": 45,
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        },
        {
          "name": "Output Capacitance",
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          "unit": "pF",
          "min": null,
          "typ": 4.7,
          "max": 25,
          "conditions": "VDS = -25V, VGS = 0, f = 1.0MHz",
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        {
          "name": "Reverse Transfer Capacitance",
          "symbol": "Crss",
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          "max": 12,
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          "name": "Total Gate Charge (VGS = -4.5V)",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 0.28,
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          "name": "Total Gate Charge (VGS = -10V)",
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          "name": "Gate-Source Charge",
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        {
          "name": "Gate-Drain Charge",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 0.08,
          "max": null,
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        {
          "name": "Gate Resistance",
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          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 916,
          "max": null,
          "conditions": "VDS = 0, VGS = 0, f = 1MHz",
          "source_page": 2,
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        {
          "name": "Turn-On Delay Time",
          "symbol": "tD(ON)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 10,
          "max": null,
          "conditions": "VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V",
          "source_page": 2,
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        {
          "name": "Turn-Off Delay Time",
          "symbol": "tD(OFF)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
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          "max": null,
          "conditions": "VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V",
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  "sections": [
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    "info"
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  "discovery_triggers": [
    "P-channel MOSFET",
    "high-side switch",
    "load switch",
    "reverse polarity protection",
    "level shifter"
  ],
  "discovery_pitch": "A small P-channel MOSFET for high-side load switching, reverse-polarity protection, and I2C level shifting, paired with the BSS138.",
  "author": {
    "name": "Ray"
  },
  "dependencies": {},
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